Polarization State Evolution in Fibre Polarization Transformer Influenced by Phase Difference

In accordance with the intrinsic structure of controllably-spun birefringent-fibre-based fibre polarization transformer （FPT）, the Jones vector is calculated from point to point along the polarization transforming fibre by the cascade differential phase retarder model. It is the first time using this concise method to examine the phasedifference effect on the evolution of state of polarization （SOP） inside this special fibre component. Both the extinction ratio and orientation angle of SOP are calculated to give out a whole evolution history from linear polarization light at the slow spun end into circular polarization light at the fast spun end, and vice versa. The influence of phase-difference is discussed on the polarization transforming performance and further referential conclusion is provided for design and test of the FPT component.     

Theoretical Analysis of Current Crowding Effect in Metal/AIGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode

There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.     

Effect of Ⅲ/Ⅴ Ratio of HT-AIN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

We investigate the effect of A/N ratio of the high temperature （HT） AIN buffer layer on polarity selection and electrical quality of GaN films grown by radio frequency molecular beam epitaxy. The results show that low Al/N ratio results in N-polarity GaN films and intermediate Al/N ratio leads to mixed-polarity GaN films with poor electrical quality. GaN films tend to grow with Ga polarity on Al-rich AIN buffer layers. GaN films with different polarities are confirmed by in-situ reflection high-energy electron diffraction during the growth process. Wet chemical etching, together with atomic force microscopy, also proves the polarity assignments. The optimum value for room-temperature Hall mobility of the Ga-polarity GaN film is 703cm^2/V.s, which is superior to the N-polarity and mixed-polarity GaN films.     

Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode

In order to reduce the reset current of cllalcogenide random access memory; a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.184-μm technology, is proposed for the first time to achieve a reset current of about 0.5 mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.     

THE PHOTOCHEMICAL SYNTHESIS OF THE PYRIDINE ADDUCT OF TETRAPHENYLPORPHYRINATORHODIUM(Ⅱ)AND THE MECHANISM OF PHOTOCHEMICAL REACTION

A new rhodium(Ⅱ)porphyrin complex was isolated by chromatography from the photochemical reac-tion of(μ—tetraphenylporphyrinato)bis[dicarbonylrhodium(Ⅰ)]with pyridine in benzene and has been charac-terized.From the results,the reaction mechanism is proposed.     

非接触体积测量实验系统

将物体体积参量测量转变成气体压力测量，可以实现体积非接触测量．本文设计了非接触体积测量实验系统，并分析了系统测量的分辨率及精度．     

关于微波感应直流电压现象的理论

在一个开路(即未和直流电源相联)的约瑟夫逊隧道结上以微波辐照,隧道结的两端便出现一定的直流电压。这就是微波感应电压现象。 文献[1]报道了Chen等人的实验结果。他们采用尺寸很小的Pb-PbOx-Pb结。隧道结的结平面面积约10~(-6)cm~2;结电阻为1Ω;临界电流I_c(在1.4K时)为1.1mA.在10GHz的微波辐照下,结两端出现的直流电压V_n是断续的,和微波频率υ在如下关系:     

超导临界温度理论(Ⅰ)

本文求出了Eliashberg方程在T=T_c时的解,得到了下面的临界温度级数表示式:T_c=α₀(μ^*)(λ〈ω²〉)^1/2{1+1/λα₁(μ^*)〈ω⁴>/〈ω²>²+1/λ²(α₂₁(μ^*)〈ω⁶>/〈ω²>³+α₂₂(μ^*)〈ω⁴>²/〈ω²>⁴) +1/λ³(α₃₁(μ^*)〈ω⁸>/〈ω²>⁴+α₃₂(μ^*)(〈ω⁴>〈ω⁶>)/〈ω²>⁵)+α₃₃(μ^*)〈ω⁴>³/〈ω²>⁶+…},其中α₀(μ^*),α₁(μ^*)等仅是μ^*的函数。新的T_c公式表明了,T_c不仅依赖于λ、μ^*和〈ω²〉,而且依赖于有效声子谱α²F(ω)的各级矩〈ω²ⁿ〉。