Dielectric relaxation of CsHSeO4 above room temperature

Dielectric measurements of CsHSeO₄ show a distinct relaxation at low frequencies at several isotherms (T < 363 K). For example, the relaxation frequency is around 4 kHz at 323 K and increases to higher frequencies (~ 100 kHz) as the temperature increases. The relaxation has an activation energy of 0.8 eV, which is in close agreement with that associated with transport of charge carriers. We suggest that the observed dielectric relaxation could be produced by the H⁺ jump and SeO₄^? 2 reorientation that cause distortion and change the local lattice polarizability, inducing dipoles like HSeO₄^?.     

Origin of dielectric relaxations in KHSeO4 above room temperature

The dispersion curves of the dielectric response for KHSeO₄ were obtained in the radio frequency range at several isotherms below the fast proton conducting phase (T?<?415 K). The results reveal a distinct dielectric relaxation at low frequency, which is about 682 Hz at 320 K, and then, it shifts to higher frequencies (～10 kHz) as the temperature increases. The f _max vs. reciprocal T shows an activated relaxation process with an activation energy of 0.5 eV, which is in close agreement with that associated with transport of charge carriers. We suggest that the observed dielectric relaxation could be attributed to polarization induced by the proton jump and selenate tetrahedral reorientations. The displacement of mobile H⁺ proton accompanied by SeO ₄ ^??2 tetrahedra reorientations creates structural distortion in both sublattices which induce localized dipoles like HSeO ₄ ^? .