Bank-office Process Management in the Financial Services: a Simulation Approach Using a Model Generator

For the last ten years or so, developments in simulation software and methodology have been focused in two areas: (1) automating the model-building process; and (2) interfacing with other techniques and systems. That both academic and commercial research continues to be carried out in these areas is evidence of the continued popularity of the simulation technique. The most popular application areas where simulation modelling is used include manufacturing (engineering and process), warehousing and communications; not surprisingly, research and developments have therefore been concentrated in these areas. This paper describes the development of a simulation model generator for a different application area, that of clerical office processing of paper and documents for financial service companies. It outlines the reasons why there is a need for such a model generator and discusses the initial design requirements. The paper goes on to detail the developments and re-defined criteria required as the model generator brief changes as a result of practical applications.     

Minimizing Maximum Weighted Error for Imprecise Computation Tasks

We consider the problem of preemptively scheduling a set of imprecise computation tasks on m ≥ 1 identical processors, with each task T_i having two weights, w_i and w′_i. Two performance metrics are considered: (1) the maximum w′-weighted error; (2) the total w-weighted error subject to the constraint that the maximum w′-weighted error is minimized. For the problem of minimizing the maximum w′-weighted error, we give an algorithm which runs in O(n³ log²n) time for multiprocessors and O(n²) time for a single processor. For the problem of minimizing the total w-weighted error subject to the constraint that the maximum w′-weighted error is minimized, we give an algorithm which also has the same time complexity.     

Optical Tunnelling from One-Dimensional Square-Well Potentials

The authors study a one-dimensional model for optical tunnellingwith a refractive index in the shape of a square well. The relevanceof the model and its limiting cases are discussed. The mainresult is the leading behaviour of the exponentially small imaginarypart of the eigenvalue which determines the radiation loss.The leading behaviour of the imaginary part is calculated usingBerry's formula which controls the asymptotic expansion of theAiry function Bi(z) to better-than-exponential accuracy.     

On the existence of <Emphasis Type="Bold">1, 3</Emphasis>P <Emphasis Type="Bold">o</Emphasis> resonances in H<Superscript>-</Superscript> between n = 2 and 3 H thresholds

We examine the influence of relativistic and QED effects on the existence of the ^1,3P ^o H^- resonances between n = 2 and 3 hydrogen thresholds, the relativistic and QED corrections and the coupling effects between the high singlet and triplet states are considered as first-order perturbations. We firstly obtain accurate non-relativistic resonant energies and widths of fifteen ¹P ^o resonances, and fifteen ³P ^o resonances. The fifteen ¹P ^o resonances are classified to be ₃ (2, 0) ^- _n ( 4 ? n ? 12) and ₃ (1, 1) ⁺ _n ( 3 ? n ? 8). The fifteen ³P ^o resonances are classified to be ₃ (2, 0) ⁺ _n ( 3 ? n ? 12) and ₃ (1, 1) ^- _n ( 4 ? n ? 8). We found there exist six Feshbach resonances for ₃ (2, 0) ^- _n (¹P ^o ) series, four Feshbach resonances for ₃ (1, 1) ⁺ _n (¹P ^o ) series, seven Feshbach resonances for ₃ (2, 0) ⁺ _n (³P ^o ) series, and three Feshbach resonances for ₃ (1, 1) ^- _n (¹P ^o ) series. Received 22 February 2002 Published online 24 September 2002     

Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry

The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia