Relativistic quantum theory of cyclotron resonance in a medium

The relativistic quantum theory of cyclotron resonance in a medium with arbitrary dispersive properties is presented. The quantum equation of motion for a charged particle in the field of a plane electromagnetic wave and in the uniform magnetic field in a medium is solved in the eikonal approximation. The probabilities of induced multiphoton transitions between the Landau levels in a strong laser field are calculated.     

Effect of purification on the electron structure and field emission characteristics of a carbonaceous material containing single-wall carbon nanotubes

A carbonaceous material containing single-wall carbon nanotubes (SWNTs) has been synthesized by arc-discharge evaporation of graphite with a catalytic additive of nickel and cobalt powders. The synthesized SWNTs were purified from an amorphous carbon component (soot) and the catalyst particles by boiling in nitric acid. A comparison of the X-ray fluorescence spectra measured before and after this treatment showed that acid etching significantly decreased the content of soot in the material. The material enriched with SWNTs is characterized by a reduced threshold for the appearance of the field emission current, which is explained by a decrease in the screening effect of soot. The current-voltage characteristics of SWNTs exhibit a hysteresis, which is suggested to be due to the adsorption of molecules and radicals on the surface and at the ends of carbon nanotubes.     

Beam propagation in a randomly inhomogeneous medium

An integrodifferential equation describing the angular distribution of beams is analyzed for a medium with random inhomogeneities. Beams are trapped because inhomogeneities give rise to wave localization at random locations and random times. The expressions obtained for the mean square deviation from the initial direction of beam propagation generalize the “3/2 law.”     

DX<Superscript>−</Superscript> center formation in planar-doped GaAs:Si in strong electric fields

The kinetics of current decay and partial restoration in planar doped GaAs:Si due to the formation of DX^? centers in strong electric fields has been experimentally studied. The existence of thresholds with respect to the field strength and donor concentration is explained. A model of the DX^? center formation is proposed, which is based on the notions about variation of the depth and width of a potential well created by planar doping, caused by the redistribution of hot electrons between quantum confinement subbands. As a result, the energy level of DX^? centers, which is situated above the potential well depth in the absence of strong field, decreases and falls within the potential well. This makes possible the DX^? center formation, provided that hot electrons, occupying the resonance electron levels in the conduction band, simultaneously excite local vibrational modes.