Thermal conductivity of crystalline chrysotile asbestos

The thermal conductivity of crystalline chrysotile asbestos made up of hollow tubular Mg₃Si₂O₅(OH)₄ filaments is measured in the range 5–300 K. The paper discusses the possibility of using this material in studies of the thermal conductivity of thin filaments of metals and semiconductors incorporated into the channels of crystalline chrysotile asbestos tubes.     

Crystallization and morphology of poly(vinylidene fluoride)/poly(3‐hydroxybutyrate) blends. I. Spherulitic morphology and growth by polarized microscopy

The development of the poly(3‐hydroxybutyrate) (PHB) morphology in the presence of already existent poly(vinylidene fluoride) (PVDF) spherulites was studied by two‐stage solidification with two separate crystallization temperatures. PVDF formed irregular dendrites at lower temperatures and regular, banded spherulites at elevated temperatures. The transition temperature of the spherulitic morphology from dendrites to regular, banded spherulites increased with increasing PVDF content. A remarkable amount of PHB was included in the PVDF dendrites, whereas PHB was rejected into the remaining melt from the banded spherulites. When PVDF crystallized as banded spherulites, PHB could consequently crystallize only around them, if at all. In contrast, PHB crystallized with a common growth front, starting from a defined site in the interfibrillar regions of volume‐filling PVDF dendrites. It formed by itself dendritic spherulites that included a large number of PVDF spherulites. For blends with a PHB content of more than 80 wt %, for which the PVDF dendrites were not volume‐filling, PHB first formed regular spherulites. Their growth started from outside the PVDF dendrites but could later interpenetrate them, and this made their own morphology dendritic. These PHB spherulites melted stepwise because the lamellae inside the PVDF dendrites melted at a lower temperature than those from outside. This reflected the regularity of the two fractions of the lamellae because that of those inside the dendrites of PVDF was controlled by the intraspherulitic order of PVDF, whereas that from outside was only controlled by the temperature and the melt composition. The described morphologies developed without mutual nucleating efficiency of the components. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 873–882, 2003     

Mathematical modelling of the oxidation of nickel titanium alloys

A one-dimensional bulk reaction model for the oxidation of nickeltitanium is formulated, with preferential oxidation of titaniumbeing included. The modelling is directed at the better understandingof the dominant mechanisms involved in the oxidation processand their significance for the biocompatibility of the alloy.Two different regimes for the relative diffusivities of oxygenand the metals are investigated. By assuming fast bulk reactions,different asymptotic structures emerge in different parameterregimes and the resulting models take the form of moving boundaryproblems. Different profiles of nickel concentration are obtained:in particular a nickel-rich layer (observed in practice) ispresent below the oxide/metal interface for the case when oxygenand the metals diffuse at comparable rates.     

Application of MMMA method: Dispersed superconductors and magnetic nanolayers

Microwave nonresonant dissipation observed around zero field makes a powerful method in characterizing superconducting state (to determineT _C,H _C1,H _CJ parameters). This review shows several successful applications of magnetically modulated microwave absorption (MMMA). MMMA enables to study MgB₂ superconducting nanoregions embedded in the Mg host structure. Application of MMMA to study intercalation of fullerence enabled the observation of a new superconducting phase. The pressure effect dT _C/dp has been studied below the percolation threshold in YBaCuO/PST composites. The local temperature of the Josephson junction measured by the MMMA technique showed that a granular superconductor consists of two phases: host phase and Josephson junction system. MMMA has been applied lately to separate the giant magnetoresistance from the magnetization effect in differential hysteresis loops.     

Fundamentals of the direct measurement of sound intensity and practical applications

Sound intensity is a measure of the magnitude and direction of the flow of sound energy. Developments in sound intensity measurement capabilities in the last quarter century have occurred because of several reasons. The main ones include the derivation of the cross-spectral formulation for sound intensity and developments in digital signal processing. This paper begins with a brief historical introduction of sound intensity measurements. Then elementary theory for sound intensity is presented. A section on sound intensity measurements is then included. The next section of the paper discusses sources of measurement error; the major sources of error are described in some detail. The paper continues with a discussion of the main applications of sound intensity measurements: sound power determination, noise source identification, and transmission loss measurements. The paper concludes with a discussion of ISO and ANSI intensity related standards and relevant references.     

Modelling and design of a travelling-wave electro-optic modulator on InP

Based on a rigorous vectorial analysis, a fast travelling-wave Mach–Zehnder modulator is modelled and designed. The cross-section of the semiconductor layer stack and the lossy electrodes are carefully modelled using the method of lines in order to investigate propagation characteristics, velocity and losses. This yields an accurate microwave and optical field distribution to explain the behaviour of the component. In order to enhance the modulation efficiency, design curves are derived and the cross-sectional dimensions for minimum microwave loss are determined. The loss of the optimized modulator agrees very well with small-signal measurements up to 40 GHz and HFSS simulations. The layerstack of the fabricated device is suitable for integration with InP multi-wavelength lasers.