Laser writing techniques for photomask fabrication using a femtosecond laser

Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001     

Dynamic scanning force microscopy study of self-assembled DNA-protein nanostructures

Self-assembled oligomeric nanostructures consisting of bisbiotinylated DNA fragments connected by the protein streptavidin (STV) are studied by dynamic scanning force microscopy (SFM) operating in air. A comparison of the images taken in repulsive and attractive regimes is systematically made on DNA and STV structures. Stable and reproducible SFM images are obtained in the attractive regime by using a special feedback circuit, called Q-control. On the other hand, when SFM is operating in the repulsive regime, deformation of the structures that reduce the resolution and the image quality are clearly observable. The heights of both DNA and STV have been measured as a function of the tip/molecule interaction forces. This study offers the possibility to suggest a different mechanical behavior of DNA with respect to STV. Received: 24 July 2001 / Accepted: 3 December 2001 / Published online: 4 March 2002     

MO analysis of macroscopic supercurrent flow in MgB 2

We present results from an extended magneto-optical (MO) analysis of two samples cut from high-density pellets of MgB₂. The first sample was studied in order to show that no matter how large the sample is and despite the bulk granularity, the material enters into a critical state in a crystal-like fashion. The second sample was chosen for the quantitative analysis. A numerical approach based on an inverted 2D Biot-Savart model was used to calculate the current paths across the homogeneous polycrystalline bulk, as well as in the vicinity and across some morphological defects. Local current densities in the homogeneous part were estimated as a function of the applied magnetic field at different temperatures, in three regimes: below full penetration, at full penetration and above full penetration, respectively. A hypothesis of interpretation of the apparent absence of magnetic granularity inside the polycrystalline microstructure is presented. It is related to a critical state likely reached by a network of strongly coupled Josephson junctions. Received 31 May 2001 and Received in final form 5 December 2001     

Picosecond control of coherent magnetisation dynamics in permalloy thin films by picosecond magnetic field pulse shaping

We have measured the response of a 20×10 μm, 8 nm thin NiFe (80:20) permalloy film due to excitation by short in-plane magnetic field pulses. We will show that using a two-pulse-technique a complete control of the precessional motion of the magnetisation can be achieved on picosecond timescales. Furthermore, we will present numerical calculations which show that a complete suppression of magnetisation ringing after switching can only be realised by a cascade of short field pulses.     

Crystal structure and magnetic ordering of RNi Si compounds

The element distributions and the magnetic ordering behaviour of compounds RNi₁₀Si₂ (R = Tb, Dy, Ho, Er, Tm) have been studied by neutron powder diffraction down to temperatures of 1.6 K. The compounds crystallize in an ordered variant of the ThMn₁₂ structure type in the tetragonal space group P4/nmm. An ordered 1:1 distribution of Ni and Si on sites 4d and 4e, respectively, corresponds to a modulation vector [0, 0, 1] with respect to the space group I4/mmm of the ThMn₁₂ structure. TbNi₁₀Si₂ orders antiferromagnetically below T _N = 4.5 K with a magnetic propagation vector of [0, 0, 1/2]. The magnetic Tb moments, 8.97(2) /Tb atom at 1.6 K, are aligned along the c-axis. The Ni sites in TbNi₁₀Si₂ do not carry any ordered magnetic moments. The compounds with R = Dy, Ho, Er, and Tm are paramagnetic down to 1.6 K and 3.0 K, respectively. Received 10 July 2002 / Received in final form 12 September 2002 Published online 29 October 2002     

Higher-order <Emphasis Type="Bold">?</Emphasis> corrections in the semiclassical quantization of chaotic billiards

In the periodic orbit quantization of physical systems, usually only the leading-order ? contribution to the density of states is considered. Therefore, by construction, the eigenvalues following from semiclassical trace formulae generally agree with the exact quantum ones only to lowest order of ?. In different theoretical work the trace formulae have been extended to higher orders of ?. The problem remains, however, how to actually calculate eigenvalues from the extended trace formulae since, even with ? corrections included, the periodic orbit sums still do not converge in the physical domain. For lowest-order semiclassical trace formulae the convergence problem can be elegantly, and universally, circumvented by application of the technique of harmonic inversion. In this paper we show how, for general scaling chaotic systems, also higher-order ? corrections to the Gutzwiller formula can be included in the harmonic inversion scheme, and demonstrate that corrected semiclassical eigenvalues can be calculated despite the convergence problem. The method is applied to the open three-disk scattering system, as a prototype of a chaotic system. Received 10 September 2001 and Received in final form 3 January 2002     

The standard model on non-commutative space-time

We consider the standard model on a non-commutative space and expand the action in the non-commutativity parameter . No new particles are introduced; the structure group is . We derive the leading order action. At zeroth order the action coincides with the ordinary standard model. At leading order in we find new vertices which are absent in the standard model on commutative space-time. The most striking features are couplings between quarks, gluons and electroweak bosons and many new vertices in the charged and neutral currents. We find that parity is violated in non-commutative QCD. The Higgs mechanism can be applied. QED is not deformed in the minimal version of the NCSM to the order considered. Received: 29 November 2001 / Published online: 25 January 2002     

Diffractive heavy vector meson production from the BFKL equation

Diffractive heavy vector meson photoproduction accompanied by proton dissociation is studied for arbitrary momentum transfer. The process is described by the non-forward BFKL equation, for which a complete analytical solution is found, giving the scattering amplitude. The impact of non-leading corrections to the BFKL equation is also analysed. Results are compared to the HERA data on production. Received: 2 July 2002 / Revised version: 29 August 2002 / Published online: 18 October 2002     

The simulation of dendrite growth and partial discharges in epoxy resin

A self-consistent model of the development of dendrites and partial discharges in a dielectric solid under a variable voltage is suggested. Dendrites originate at sites with the enhanced local field strength and also where the dielectric is broken down under the action of partial discharges. The numerical simulation is used to quantitatively describe the space-time dynamics of the dendrites and partial discharges in epoxy resin for the tip-plane electrode configuration. The simulated data are compared with electrical measurements of partial discharges and with optical images of dendrite growth under the same conditions.     

Study of the Surface Processes in Vapor-Phase Epitaxial GaAs: Asymmetric Trapping of Atoms at the Step

Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl₃–H₂ system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the growth of epitaxial GaAs layers on vicinals in the neighborhood of (111)A. The effective diffusion length is estimated.