Flexible active matrix addressed displays manufactured by printing and coating techniques

A flexible electrochromic active matrix addressed display, including 8 × 8 pixels, is demonstrated by using solution processing based on standard printing and coating manufacturing techniques. Each organic electrochromic display (OECD) pixel and its corresponding organic electrochemical transistor (OECT) are located on different sides of the flexible PET substrate. Electronic vias generated through the plastic substrate connects each OECD pixel with one addressing OECT. When comparing this display with actively addressed OECDs with all its components located on the same side, the present approach based on this electronic via substrate provides an enhanced pixel resolution and a relatively more simplified manufacturing process. © 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012     

Ultra-slow muon facility for advanced μSR studies

A concept, a construction and an account of commissioning experiments up to May 1993 are given for the recently completed ultra-slow positive muon facility at the pulsed muon facility of UT-MSL/KEK. The intense and ultra-slow ⁺ beam with an extremely small phase-space volume to be produced in this facility will open new muon sciences includingSR studies on material surfaces.     

Halfway-plane and continuum calculations of blocking dips for displaced atoms

Abstract

Redistribution of phosphorus dopant in 1N2175 phototransistors damaged by a pulsed neodynium laser has been investigated using the electron microprobe technique. Four different effects observed in the concentration profdes were explained by the action of diffusion and segregation, in the presence of temperature and compositional gradients. One specific effect was analyzed using a simplified model consisting of diffusion in the melt followed by the segregation upon refreezing. It was estimated that certain areas of the phototransistor surface remained above the melting point for times of the order of 10^?4 sec. Correlation was made between the results of these microprobe measurements and previously observed laser-damage effects in the electrical characteristics. It is suggested that impurity migration may be an important mechanism for damage to junction devices by pulsed lasers in an intermediate energy range.     

HCN laser scattering on the JIPP T-IIU tokamak

A 4-channel HCN laser scattering system has been developed and applied to the JIPP T-IIU tokamak. Main aim of this system is to study microturbulence excited in the plasma, especially in the high power ICRF heating experiment. The observed density fluctuations are in a frequency range of the electron diamagnetic drift wave and have broad frequency spectra. The main part of the wavenumber is found to satisfy the condition of . In the heating experiments, deterioration of the energy confinement time is observed, and the density fluctuation level increases with the increase of the heating power.     

WIDE RANGE DETECTOR USING PARABOLIC CYLINDRICAL MIRROR FOR THz APPLICATIONS

A new, wide-band, high-speed and high-sensitivity THz detector has been developed. The prototype detector consists of a parabolic cylindrical mirror, a long wire antenna and a Schottky barrier diode. Direct detection measurements have shown a stable sensitivity of 150 ± 50 V/W for 1–2 THz without any adjustments. The long wire antenna was fixed at the focus of parabolic cylindrical mirror then it has been realized less operation steps, easy coupling to the external THz signals and a dramatic enhancement in the practicality of this system. The optically polished mirror and frosted surface one showed comparable sensitivities, thus easy polishing and less cost mirror fabrication can be applied for this system. The radiation pattern showed a maximum radiation angle of approximately 23° with its dominant main lobe, which was attributed to the wire antenna character and confirmed good agreements with classical antenna theory.