Achievement of laser fusion of biological cells using UV pulsed dye laser beams

This paper reports a successful achievement of laser-induced biological cell fusion using an excimer laser excited dye laser. To our knowledge, we examined for the first time the dependence of fusion rate on laser pulse energy, number of laser pulses, and laser wavelength. Maximum fusion rate of approximately 50% was obtained by this laser fusion technology.     

20-relative neighborhood graphs are hamiltonian

For any two points p and q in the Euclidean plane, define LUN_pq = { v | v ∈ R², d_pv < d_pq and d_qv < d_pq}, where d_uv is the Euclidean distance between two points u and v . Given a set of points V in the plane, let LUN_pq(V) = V ∩ LUN_pq. Toussaint defined the relative neighborhood graph of V, denoted by RNG(V) or simply RNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of RNG(V) if and only if LUN_pq (V) = ?. The relative neighborhood graph has several applications in pattern recognition that have been studied by Toussaint. We shall generalize the idea of RNG to define the k-relative neighborhood graph of V, denoted by kRNG(V) or simply kRNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of kRNG(V) if and only if | LUN_pq(V) | < k, for some fixed positive number k. It can be shown that the number of edges of a kRNG is less than O(kn). Also, a kRNG can be constructed in O(kn₂) time. Let E_c = {e_pq| p ∈ V and q ∈ V}. Then G_c = (V,E_c) is a complete graph. For any subset F of E_c, define the maximum distance of F as max_epq∈Fd_pq. A Euclidean bottleneck Hamiltonian cycle is a Hamiltonian cycle in graph G_c whose maximum distance is the minimum among all Hamiltonian cycles in graph G_c. We shall prove that there exists a Euclidean bottleneck Hamiltonian cycle which is a subgraph of 20RNG(V). Hence, 20RNGs are Hamiltonian.     

A note on strongly π-regular rings

Let R be an associative ring with unit and let N(R) denote the set of nilpotent elements of R. R is said to be stronglyπ-regular if for each x∈R, there exist a positive integer n and an element y∈R such that x ⁿ=x ^{n +1} y and xy=yx. R is said to be periodic if for each x∈R there are integers m,n≥ 1 such that m≠n and x ^m=x ⁿ. Assume that the idempotents in R are central. It is shown in this paper that R is a strongly π-regular ring if and only if N(R) coincides with the Jacobson radical of R and R/N(R) is regular. Some similar conditions for periodic rings are also obtained. This revised version was published online in June 2006 with corrections to the Cover Date.     

On α-I-continuous and α-I-open functions

Montgomery and Vaughan improved a theorem of Erd?s and Fuchs for an arbitrary sequence. Sárközy extended this theorem of Erd?s and Fuchs for two arbitrary sequences which are "near" in a certain sense. Using the idea of Jurkat (differentiation of the generating function), we will extend similarly the result of Montgomery and Vaughan for "sufficiently near" sequences.     

An exponentially fitted special second-order finite difference method for solving singular perturbation problems

An exponentially fitted special second-order finite difference method is presented for solving singularly perturbed two-point boundary value problems with the boundary layer at one end (left or right) point. A fitting factor is introduced in a tri-diagonal finite difference scheme and is obtained from the theory of singular perturbations. Thomas Algorithm is used to solve the system and its stability is investigated. To demonstrate the applicability of the method, we have solved several linear and non-linear problems. From the results, it is observed that the present method approximates the exact solution very well.     

Controllability of Functional Integro-Differential Inclusions with an Unbounded Delay

In this paper, a sufficient condition is established for the controllability of neutral functional integro-differential inclusions with an unbounded delay in Banach spaces. The approach used is a fixed-point theorem for condensing maps due to Martelli and the theory of analytic semigroup of linear operators. Communicated by F. Zirilli Research supported by NNSF of China, by the Teaching and Research Award Program for Outstanding Young Teachers in Higher Education Institutions of the Ministry of Education of China, and by the Qing Lan Talent Engineering Fund QL-05-164 of Lanzhou Jiaotong University. The authors are grateful to Professor F. Zirilli and two anonymous referees for valuable suggestions improving this paper.     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.