ZnSe‐based conductive nanotemplates for nanofabrication

We show that anodic etching of n‐type ZnSe crystalline substrates leads to the formation of pores which, after nucleation at surface defects, prove to follow the current lines, exhibiting multiplication until the front of the porous network covers the whole available space. No growth of crystallographically oriented pores has been observed in ZnSe. The formation of multilayer porous structures is realized, including layers subjected to successive porosification at two different length scales. The electrochemical pulsed deposition of arrays of Pt nanotubes in the porous ZnSe matrix is demonstrated. The obtained results show that porous ZnSe structures are promising for use as conductive and optically transparent nanotemplates for nanofabrication, in particular for the important application of metal nanotubes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Anomalous retroreflection from strongly absorbing nanoporous semiconductors

Pronounced retroreflection behavior is reported for a fishnet nanoporous strongly absorbing semiconductor material. Retroreflection features a half-cone about 0.35 rad along with diffusive specular reflection for all angles of incidence. Retroreflection is apparent by the naked eye with daylight illumination and exhibits no selectivity with respect to wavelength and polarization of incident light featuring minor depolarization of retroreflected light. The reflectance in the backward direction measures 12% with respect to a white scattering etalon. The phenomenon can be classified neither as coherent backscattering nor as Anderson localization of light. The primary model includes light scattering from strongly absorptive and refractive superwavelength clusters existing within the porous fishnet structure. A reasonable qualitative explanation is based on the fact that strict retroreflection obeys shorter paths inside absorbing medium, whereas all alternative paths will lead to stronger absorption of light.     

Field emission from quantum size GaN structures

Whisker structures and quantum dots fabricated by photoelectrochemical (PEC) etching of undoped and doped metalorganic chemical vapor deposition (MOCVD)-grown GaN (2×10¹⁷ or 3×10¹⁸ cm⁻³) are investigated in relation with their field-emission characteristics. Different surface morphologies, corresponding to different etching time and photocurrent, results in different field-emission characteristics with low turn-on voltage down to 4 V/μm and the appearance of quantum-size effect in the I–V curves.     

相对论平均场理论对Pb同位素位移的研究

运用变形的相对论平均场理论研究了Pb同位素链的基态性质. 对关联的处理采用了BCS方法, 不成对核子的处理运用了“阻塞”法. 计算的结果很好地符合了实验上Pb的平均结合能, 中子分离能, 同位素位移. 接着从原子核的微观结构出发, 比较详细地研究了Pb链同位素位移出现反常扭折这一重要性质的物理机制.