Stimulated light scattering by a fluid surface in the presence of total fresnel reflection

Stimulated scattering of light by a free fluid surface in the case of total Fresnel reflection was considered. For scattering directions which are close to the direction of specular reflection of the ray, simple analytic expressions are derived for the threshold intensity and the spectrum of the scattered radiation.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 15, No. 2, pp. 233–241, February, 1972.     

Die Elektrolumineszenz von Einkristallen von ZnO

Zusammenfassung Der Wert der Spannung des Feldes, die quadratische Abhängigkeit des Leuchtens vom Strom, die äu\erst gute übereinstimmung der Abhängigkeiten der Ionisationszahl von der Spannung, welche experimentell wie auch von der Theorie der Multiplikation der Elektronen ausgehend gewonnen wurden, entsprechen somit dem Mechanismus der Sto\ionisation in ZnO. Diese Schlu\folgerung bleibt, wie zusätzliche Nachprüfungen ergeben, auch bei der Aufhebung einiger Vereinfachungen, die bei der Berechnung vorgenommen wurden (z. B. bei der Berücksichtigung schwächerer Abhängigkeiten(t), k(E), der Breite der Sperrzone von der Temperatur usw.) unverändert.Da im Falle der Isolation der Kristalle von den Elektroden die Herkunft der Oberflächensperren dieselbe bleibt, können die Ergebnisse dieser Arbeit auch für die Deutung der Eigenschaften des Destriau-Effektes in ZnO verwertet werden. Sie können anscheinend auch auf das Leuchten homogener Kristalle von ZnS mit ungefähr gleicher elektrischer Leitfähigkeit und der Sperre an der Kathode bezogen werden.

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We observed the same effect on ZnO single crystals as Destriau and Losev. We studied light emission and the electric properties of single crystals with a rectifying contact, which was switched on in the non-transmitting direction. It was found that the dependence of the number of ionizations on each electron, which passes through the contact, on the voltage, which was determined by comparing the experimental results with the diffusion theory of rectification, agrees with the dependence calculated by means of the multiplication theory of electrons in semi-conductors. The conclusion was reached that inelastic collisions play a greater role in ZnO as the excitation mechanism. The calculated voltage dependence of electroluminescence is very close to the measured dependence.

     

Measurement of the dielectric constant of a shock tube plasma

Measurements of the electrical characteristics of the plasma in waveguide and coaxial shock tubes over the frequency range 200–7300 MHz are reported.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 27–31, February, 1974.     

Dislocation mobility in silver chloride

Stress relaxation test has been used as an indirect method for determination of the velocity-stress exponent for dislocation motion in AgCl single crystals in the temperature range 77 to 423 K. The stress dependence of the velocity-stress exponent has been estimated. A large effect of quenching on the value of the exponent has been found.We wish to thank Dr. F.Vávra for supplying the specimens.     

Distribution of Shower Particles as Obtained in the Analysis of a 10 + 13p Shower Event

We present here the analysis of an accelerator produced 10 + 13p shower event observed in nuclear emulsion. The DULLER -WALKER method is applied to obtain the distribution of secondary shower particles, and the particles having the closest log₁₀ tan θ_L values are taken to form a cluster. This cluster formation is also confirmed by the target diagram method. If this cluster is conceived to be a high spin resonance and the secondary pions to be the decay products of this resonance, then the azimuthal integral distribution curve fits fairly well with our experimental data.     

Valence charge distribution and electric field gradients in GaAsAlAs mixed crystals

Electric field gradients at the arsenic sites in the GaAsAlAs mixed compounds are calculated using the self-consistent pseudo-potential method. The result is in good agreement with recent nuclear quadrupole resonance (NQR) experiments and supports the interpretation that the NQR splittings arise from an Al ion relacing one of the four Ga ions near an As site.     

Ultraviolet reflectivity spectra of CuInSe2, CuInTe2 and CuGaTe2

Reflectivity spectra of CuInSe₂, CuInTe₂ and CuGaTe₂ are measured in the photon energy range from 2 to 9 eV. All compounds exhibit nearly the same reflectivity structures, and a comparison with measurements on the other Cu-III-VI₂ semiconductors shows that the band structures of all Cu-III-VI₂ compounds should be very similar except the energy range near the fundamental edge.     

Comments on D.C. conductivity in amorphous semiconductors

A recent paper in this journal argued that the electrical conductivity arising from thermal hopping between localized states obeys the law in $\text{ln}\text{σ∝ — (T}{}_{\mathrm{<mtext>0</mtext>}}\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}$, at low temperatures. That result is found to be based on several unjustified assumptions, however, and the correct temperature dependence is $\text{ln}\text{σ∝ — (T}{}_{\mathrm{<mtext>0</mtext>}}\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$, as originally proposed by Mott.     

Raman scattering in FeF3

Peaks in the FeF₃ phonon Raman spectrum are assigned to the A_1g(312 cm^-1) and E_g(105, 187, 450 cm^-1) representations of the D⁶_3d group. Anomalous temperature dependence of the frequency, intensity and line width of the 187 cm^-1 line has been observed.