Spatial coherence and coherent interactions of broadband dispersed laser beams

Analytical expressions are obtained that describe the changes in the degree of coherence and in the thickness of the coherence layers occurring upon propagation of a dispersed broadband laser beam. It is found that the greater the tilting of the coherence layers with respect to the phase fronts, the more rapidly the spatial coherence is violated with increasing distance. A comparison with the case of an undispersed beam is performed. It is shown that, as the beam propagates, the decrease in the degree of coherence is accompanied by the appearance of spatial fluctuations of this parameter. The degree of mutual coherence of intersecting dispersed beams with parallel correlated coherence layers, which determines the efficiency of their coherent interaction, is investigated. The existence of spatial fluctuations of the degree of mutual coherence is established.     

Model of separate sample spectra of coherent-echo signals based on Irkutsk incoherent-scatter radar data

We propose a model of coherent-echo signals during the monostatic sounding of the ionosphere. The model is based on the previously obtained radar equation for separate samples of the scattered signal. The dielectric-permittivity perturbation described by a discrete set of spatial harmonics modulated in space and time is used as the scattering irregularities. The model was tested using Irkutsk incoherent-scatter radar data obtained during the coherent-echo observations in July 15 and 16, 2000. The test shows that the model is suitable for describing the observed characteristics of separate sample spectra of the coherent-echo signals. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 49, No. 6, pp. 459–477, June 2006.     

Studying the process of ionization of hydrogen in conditions of its forced delivery to a porous nickel oxide electrode

The hydrogen ionization process is studied experimentally on an industrial sintered nickel oxide electrode in models of sealed nickel-metal hydride batteries. It is shown that the hydrogen ionization rates that are reached during overcharge by high current densities in conditions of forced gas delivery into the electrode pores (up to 40 mA cm^?2) exceed the self-discharge rate of a nickel-hydrogen battery by two orders of magnitude. Up to 70% of hydrogen delivered into the compact assembly block undergoes ionization during forced charge of models of sealed nickel-metal hydride batteries with a closed hydrogen cycle. Two independent methods (potentiostatic and manometric) are used to determine the relationship between rates of hydrogen ionization with the degree of the electrode filling with gas and perform estimation of the process intensity at a unit reaction surface. It is established that, in conditions of forced gas delivery, practically all the hydrogen oxidation current is generated at the surface of the nickel oxide electrode beneath thin films of an electrolyte solution at the rate of 4–5 mA cm^?2. It is shown that the hydrogen oxidation rate on a nickel oxide electrode filled in part by gas is independent of the electrode potential, probably because of a tangible contribution made by diffusion limitations to the overall hampering of the process.     

Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si

The influence of processing parameters on the electrical characteristics of RuO₂/LaAlO₃/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO₃ on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO₃ film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO₃ on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc     

Inequalities for the Moments and Distribution of the Ladder Height of a Random Walk

We obtain upper bounds for the tail distribution of the first nonnegative sum of a random walk and for the moments of the overshoot over an arbitrary nonnegative level if the expectation of jumps is positive and close to zero. In addition, we find an estimate for the expectation of the first ladder epoch.     

Harmonic mappings of the Sierpinski gasket to the circle

Harmonic mappings from the Sierpinski gasket to the circle are described explicitly in terms of boundary values and topological data. In particular, all such mappings minimize energy within a given homotopy class. Explicit formulas are also given for the energy of the mapping and its normal derivatives at boundary points.

     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

Stability of Mappings with Bounded Distortion on the Heisenberg Group

A stability theorem is proved for mappings with bounded distortion over John domains in the Heisenberg group furnished with the Carnot–Caratheodory metric.     

Barotropic Instability of the Bickley Jet at High Reynolds Numbers

We investigate the linear stability of the Bickley jet in the framework of the beta-plane approximation. Because singular inviscid neutral modes exist in the retrograde case     , it is necessary to add viscosity to interpret them. One of these modes was found in closed form by Howard and Drazin [1] . However, its critical point is at the center of the jet and it was therefore not possible for these authors to ascertain the relationship of this mode to the stability problem or to discuss how to continue the eigenfunction across the singularity.
The viscous critical layer problem associated with this singularity is considerably more difficult than the usual one (which leads to integrals of the Airy function) because     and, consequently, a second-order turning point is involved. Our analysis shows that the Howard–Drazin mode is degenerate in the domain where it is valid as a limit of the viscous problem (wavenumber  α²≤ 9/2  ), that is, it corresponds to both an odd and an even mode. This conclusion is confirmed by direct numerical solution of the Orr–Sommerfeld equation which shows, in addition, that viscosity is destabilizing along portions of the stability boundary. For a retrograde jet, instability is found to occur beyond the inviscid critical value of β, that is, in the region where the flow would be stable according to the Rayleigh–Kuo condition.     

Arithmetic on Groups of Positive Rationals

In this paper we develop a theory of unique factorization for subgroups of the positive rationals. We show that this theory is strong enough to include arithmetic progressions and the theory of genera in algebraic number fields. We establish generalizations of both Dirichlet's theorem on primes in arithmetic progressions and the theory of genera for Abelian extensions of the rationals.