A TVD Type Wavelet-Galerkin Method for Hamilton-Jacobi Equations

In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities.     

Comparison of the boundary theory with the contact rule of phase regions and Gupta’s method

The phase boundary theory and the contact rule of phase regions are compared, and some weaknesses of the latter are manifested. The comparison between the Gupta’s method and the boundary theory method for constructing multicomponent isobaric sections is also presented.     

Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

Non-Euler–Lagrangian Pareto-optimality Conditions for Dynamic Multiple Criterion Decision Problems

In this paper the problem of verifying the Pareto-optimality of a given solution to a dynamic multiple-criterion decision (DMCD) problem is investigated. For this purpose, some new conditions are derived for Pareto-optimality of DMCD problems. In the literature, Pareto-optimality is characterized by means of Euler-Lagrangian differential equations. There exist problems in production and inventory control to which these conditions cannot be applied directly (Song 1997). Thus, it is necessary to explore new conditions for Pareto-optimality of DMCD problems. With some mild assumptions on the objective functionals, we develop necessary and/or sufficient conditions for Pareto-optimality in the sprit of optimization theory. Both linear and non-linear cases are considered.     

Crystal and molecular structure of (μ-p-CH3C6H4C2S) (μ-n-C3H7S)Fe2(CO)6Co2(CO)6

The crystal and molecular structure of the complex containing cobalt-carbon and iron-sulfur cluster cores, (μ-p-CH₃C₆H₄C₂S) (μ-n-C₃H₇S)Fe₂(CO)₆Co₂(CO)₆, has been determined by X-ray diffraction method. The crystals are triclinic, space group P&1bar;, with a — 9.139(2), b=9.610(1), c-17.183(2) Å, α = 84.36(1), β-89.45(1), γ=88.15(1)°, V-1501.0 ų; Z=2, D_c=1.74 g/cm³. R=0.072, Rw=0.081. The results of the structure determination show a cobalt-carbon cluster core formed through the reaction of (μ-p-CH₃C₆H₄C₂S)(μ-n-C₃H₇S)Fe₂(CO)₆ with Co₂(CO)₈. In the cobalt-carbon cluster core, the bond length of the original C≡C lengthened to 1.324 Å which is close to the typical value of carbon-carbon double bond. The groups connecting the carbons of the cluster core are in cis position and lie on the opposite side of cobalt atoms. In this complex, the conformation of —SC₃H₇ is e-type, while that of —SC₂C₆H₄CH₃ is a-type.     

Interior point cutting plane method for optimal power flow

In this paper, an interior point cutting plane method (IPCPM)is applied to solve optimal power flow (OPF) problems. Comparedwith the simplex cutting plane method (SCPM), the IPCPM is simpler,and efficient because of its polynomial-time characteristic.Issues in implementing IPCPM for OPF problems are addressed,including (1) how to generate cutting planes without using thesimplex tableau, (2) how to identify the basis variables inIPCPM, and (3) how to generate mixed integer cutting planes.The calculation speed of the proposed algorithm is further enhancedby utilizing the sparsity features of the OPF formulation. Numericalsimulations on IEEE 14-300-bus test systems have shown thatthe proposed method is effective.     

p型导电掺In的SnO_2薄膜的制备及表征

采用溶胶 凝胶提拉法成功地制备了p型导电掺In的SnO2 薄膜 .x射线衍射测试结果表明 ,掺In的SnO2 薄膜保持SnO2 的金红石结构 .吸收谱测试结果表明 ,掺In的SnO2 禁带宽度为 3 8eV .霍尔测量结果表明 ,空穴浓度与热处理温度有很大的关系 ,5 2 5℃为最佳热处理的温度 .铟锡原子比在 0 0 5— 0 2 0范围内 ,空穴的浓度与In的含量有直接的关系 ,并随In含量的增加而增加     

Rugged distal tips for CO2 laser medicine

Low-loss and rugged distal tips for CO₂ laser have been proposed and fabricated based on a commercially available stainless steel (St) pipe. A method of smoothening the inner surface of the St pipe with a rough inner surface is put forward. Fabrication parameters, transmission properties, and mechanical strength of the cyclic olefin polymer-coated silver hollow St distal tip are experimentally discussed.     

利用模式的对称性研究光子晶体光纤的色散

由光子晶体光纤的对称性可以得到模式分布的对称性，根据模式的对称性选择适当的展开函数，可以使计算量大大减少。计算了六角结构光子晶体光纤的色散特性，得到了波长在1．55pm处色散为零时，光子晶体光纤的结构参量所满足的方程。     

Phase formation and control of morphology in sputtered Cu-In alloy layers

The dependence of structural properties and surface morphology of Cu-In alloy layers on the composition and sputtering deposition sequence were investigated by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The properties of the co-sputtered alloy layers changed abruptly around the composition boundary when the Cu/In ratio reached 1/2. This can be explained by the effective heat of formation (EHF) model, which has been used to predict the sequence of phase formation for metal diffusion couples. The use of a co-sputtered alloy layer with a high In concentration was not suitable for fabricating solar cells, because the film had a very rough morphology due to large In islands formed on the CuIn₂ phase. However, it was possible to minimize this phase by In sputtering followed by co-sputtering with a Cu/In ratio of 1 (Cu-In/In/Glass). This permitted the fabrication of a homogeneous Cu-In alloy layer, which was not possible through the simple co-sputtering.