Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge₂Sb₂Te₅ (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 m. After the programming signals of more than 2×10⁶ cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1×10¹⁰ cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming.     

Regenerative pulsation in silica microspheres

Regenerative pulsation from whispering gallery modes excited by a continuous-wave laser beam is observed in silica microspheres that feature a diminishing thermal nonlinearity near 20 K. The regenerative pulsation arises from the competition between Kerr nonlinearity and the much reduced thermal nonlinearity, when the two nonlinearities with very different timescales are comparable in magnitude but opposite in sign.     

Fabrication of a solution-processed thin-film transistor using zinc oxide nanoparticles and zinc acetate

We have fabricated a solution-processed ZnO thin-film transistor without vacuum deposition. ZnO nanoparticles were prepared by the polyol method from zinc acetate, polyvinyl pyrrolidone, and diethyleneglycol. The solution-processable semiconductor ink was prepared by dispersing the synthesized ZnO in a solvent. Inverted stagger type thin-film transistors were fabricated by spin casting the ZnO ink on the heavily doped Si wafer with 200 nm thick SiO₂, followed by evaporation of Cr/Au source and drain electrodes. After the drying and heat treatment at 600 C, a relatively dense ZnO film was obtained. The film characteristics were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). In order to obtain the electrical properties of the solution-derived transistor, the on–off ratio, threshold voltage, and mobility were measured.     

Nonhost-associated proliferation of intrahyphal hyphae of citrus scab fungus Elsinoe fawcettii: refining the perception of cell-within-a-cell organization

Ultrastructural aspects of intrahyphal hyphae formation were investigated in Elsinoe fawcettii by transmission electron microscopy. Desiccated and hydrated cultures of E. fawcettii hyphae in liquid and solid media were prepared to determine the effects of water/nutrient availability and media fluidity on the formation of intrahyphal hyphae of the fungus. In all the culture conditions, intrahyphal hyphae were observed in enclosing hyphae. Electron-transparent hyphal cell walls clearly delimited intrahyphal hyphae from the cytoplasm of enclosing hyphae. Intrahyphal hyphae occupied most of the lumen of the enclosing hyphae, and showed intact hyphal cytoplasm with distinct organelles and inclusions. Intrahyphal hyphae were found to grow out of the degenerated hyphae that were almost devoid of cellular contents (simple intrahyphal hyphae). Some intrahyphal hyphae appeared to push aside a septum and passed into the adjacent hyphal cell. Besides a single intrahyphal hypha, instances were noted where enclosing hyphae contained several individual intrahyphal hyphae (multiple intrahyphal hyphae). Other enclosing hyphae contained intrahyphal hyphae, which also had intrahyphal hyphae (compound intrahyphal hyphae). The cell wall of intrahyphal hyphae showed the continuity with the cell wall of the enclosing hyphae. Concentric bodies typical of ascomycetes occurring in dry habitats were not found in all the types of hyphae. These results suggest that intrahyphal hyphae formation of E. fawcettii does not require plant defense responses. The fungus is thought to form intrahyphal hyphae during the saprophytic phase in ex planta ecological niches as well as the parasitic phase in host parts.     

Solvent and pH Effects on the Fluorescence of 7-(Dimethylamino)-2-Fluorenesulfonate

A novel water-soluble solvatochromic molecule, 7-(dimethylamino)-2-fluorenesulfonate (2,7-DAFS), was prepared by a three-step reaction from 2-nitrofluorene in good overall yield. The pH and solvent effects on the UV-VIS absorption and fluorescence spectra of 2,7-DAFS have been studied. Protonation of the dimethylamino group switches the absorption from intramolecular charge-transfer (ICT) to π → π* transition. The ground state pKa value of 2,7-DAFS was determined as 4.51. The fluorescence spectrum of the excited basic form, *(DAFS), shows a structureless single band with a large Stokes shift, whereas that of the acidic form, *(⁺HDAFS), exhibits a structured band with a small Stokes shift. The emission intensities of the basic and acidic forms versus pH/Ho plots show stretched sigmoidal curves and indicate that (1) the rate of deprotonation of *(⁺HDAFS) is comparable to the fluorescence decay of the species, and (2) the efficient proton-induced quenching of *(DAFS) fluorescence occurs. The pKa* was estimated as −1.7 from the fluorescence titration curve. The fluorescence maximum of *(DAFS) is blue-shifted as the polarity of solvent decreases. However, no clear dependency of the emission intensity and spectral half width, and thus fluorescence quantum yield, on the solvent polarity was revealed. It appears that the fluorescence sensitivity of 2,7-DAFS is 15 ∼ 25 times greater than the sensitivity of a widely utilized fluorescent probe, 5-(dimethylamino)-1-naphthalenesulfonate. This higher sensitivity, together with the ease of derivatization, would provide the fluorene-based fluorescent molecules significant advantages for a variety of applications.     

Synthesis of Poly(ϵ-caprolactone) Grafted Poly(2-hydroxyethyl methacrylate) Functionalized Hydroxyapatite by RAFT and ROP

Poly(?-caprolactone) grafted poly(2-hydroxyethyl methacrylate) functionalized hydroxyapatite (HAP@PHEMA-g-PCL) nanocomposites were synthesized by the combination of reversible addition fragmentation chain transfer (RAFT) polymerization and ring-opening polymerization (ROP). The RAFT agent was anchored on the surface of hydroxyapatite nanocrystals (HAPs) through the silane condensation process of 3-chloropropyltrimethoxysilane followed by reaction with potassium xanthogenate. Poly(2-hydroxyethyl methacrylate) (PHEMA) was covalently functionalized on the surface of HAPs by RAFT polymerization. Then, poly(?-caprolactone) (PCL) was grafted on HAPs by ROP based on the hydroxyl groups of PHEMA to afford HAP@PHEMA-g-PCL. The structure and composition of HAP@PHEMA-g-PCL nanocomposites were characterized by FT-IR, XRD, and TGA analyses. The morphology and formation of the polymer encapsulating HAPs were demonstrated from SEM and TEM images, while the ¹H MNR analysis of the cleaved PHEMA-g-PCL confirmed the grafting.     

Azobenzene‐Functionalized Metal–Organic Polyhedra for the Optically Responsive Capture and Release of Guest Molecules

Stimuli‐responsive metal–organic polyhedra (srMOPs) functionalized with azobenzene showed UV‐irradiation‐induced isomerization from the insoluble trans‐srMOP to the soluble cis‐srMOP, whereas irradiation with blue light reversed this process. Guest molecules were trapped and released upon cis‐to‐trans and trans‐to‐cis isomerization of the srMOPs, respectively. This study provides a new direction in the ever‐diversifying field of MOPs, while laying the groundwork for a new class of optically responsive materials.