Tail asymptotics for the fundamental period in the MAP/G/1 queue

This paper studies the tail behavior of the fundamental period in the MAP/G/1 queue. We prove that if the service time distribution has a regularly varying tail, then the fundamental period distribution in the MAP/G/1 queue has also regularly varying tail, and vice versa, by finding an explicit expression for the asymptotics of the tail of the fundamental period in terms of the tail of the service time distribution. Our main result with the matrix analytic proof is a natural extension of the result in (de Meyer and Teugels, J. Appl. Probab. 17: 802–813, 1980) on the M/G/1 queue where techniques rely heavily on analytic expressions of relevant functions. I.-S. Wee’s research was supported by the Korea Research Foundation Grant KRF 2003-070-00008.     

Minimax Theorems Involving Two Functions and Strictly Monotone Transformations of Their Values

Two two-function minimax theorems are proved.The concavity-convexity conditions of the twofunctions involve strictly monotone transformations and mixing of the values of the two functions,and aredescribed by the inequalities as upward and weakly downward conditions.     

高能闪光照相对电子束参数的要求

对高能闪光机光源性能用Monte-Carlo方法模拟研究发现：并非击靶电子束半径越小、发射度越低, 闪光机的照相性能就会越好. 研究结果表明：为了使闪光照相图像视面上照射量分布比较均匀, 对束半径与电子束归一发射度有一个联合限制, 对于20MeV闪光机, 如果击靶电子束有效半径是0.12cm, 那么仅当束归一发射度≥550cm.mrad时,在2°内的照射量不均匀性才小于5%.     

The effect of surface crystalline layers on asymmetric off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons

The off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons was measured using a pick-up coil wound around the sample. One side of a ribbon was etched in hydrofluoric acid solution during various times in order to change the thickness of the surface crystalline layer appearing after annealing. The asymmetric two-peak field dependence of the off-diagonal impedance was observed for all samples. The evolution of the off-diagonal magnetoimpedance with the change in the ribbon thickness is analyzed.     

多气隙电阻板室抗辐照性能研究

给出了为RHIC-STAR飞行时间探测器设计的多气隙电阻板室(MRPC)的辐照实验结果. 实验采用100mCi⁶⁰Co γ源, 采用不同的剂量率对MRPC进行辐照. 一个室在大剂量率2.87×10^－2Gy/h下辐照了24h后, 其性能如噪声计数率, 暗电流等均大大退化. 另一个室在相对低剂量率5.31×10^－4Gy/h下辐照了530h, 其性能没有见到任何变坏. 实验的目的是为了了解这种探测器在几年的运行中经过大剂量的辐照后的性能变化情况.     

Investigation of cold fusion in heavy water

An investigation of cold fusion of deuterium was performed by electrolyzing heavy water in a cell containing a palladium cathode while monitoring levels of tritium and neutron-capture gamma rays. No activity was detected that would indicate a sustained fusion reaction had taken place. Activities that were observed can be attributed to electrolytic enrichment and a normal cosmic-ray induced background.     

Photoemission studies of oxygen adsorbed on a LiAl(1 1 0) alloy surface: Role of Li segregation

We investigated that the effect of the number of segregated Li atoms on the rate of oxidation on a LiAl alloy surface. Oxygen molecules adsorbed on the LiAl alloy react with the surface atoms to form stable oxides. The segregated Li atoms at reconstructed surfaces (c(2×2) and (2×1)) enhance the oxidation rate and form stable LiAlO_x and Li₂O. The degree of enhancement of oxidation by segregated Li atoms varies as a function of O₂ exposure and annealing temperature, where the latter is directly related to the mode of surface reconstruction by Li segregation.     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp