High-p Tγ-hadron and π0-hadron correlations in √s NN =200 GeV Au+Au collisions in PHENIX

This poster presents the PHENIX results on high-p _Tγ-hadron and π⁰-hadron correlations and shows the modification of away side jet shape by the medium. By comparing their jet shapes and yields, we see some evidence of the direct γ contribution to correlation functions.     

Effect of C layer on the structures and magnetic properties of (0 0 1)-oriented [C/CoPt]n/Ag films

CoPt/Ag and [C/CoPt]n/Ag thin films have been prepared onto the glass substrates by magnetron sputtering. We investigated the evolution of texture and magnetic properties of CoPt/Ag and [C/CoPt]n/Ag films. The results show that C-doping plays an important role in improving (0 0 1) texture, improving the order parameter S, reducing the intergrain interactions, and making the magnetization reversal mechanism more close to Stoner-Wolfarth rotational mechanism. The growth mechanism of (0 0 1) texture also seems to be related strongly to the films thickness. Our results show that the highly (0 0 1)-oriented films with ordered fct phase have a significant potential for the perpendicular media of extremely high-density recording.     

Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate

The deformation surrounding Vickers indentations on InGaAsP/InP epilayers have been studied in detail. The surface topography was characterized by using atomic force microscopy (AFM). The material pile-up and sink-in regions around the indentation impression was observed for the quaternary InGaAsP/InP epilayers. The sectional analysis mode of the AFM shows the depth profile at the indented region. Microindentation studies were carried out for different atomic fraction of the quaternary InGaAsP/InP compound semiconductor alloys. The microhardness values of InGaAsP/InP epilayers were found to be in the range of 5.08 and 5.73 GPa. These results show that the hardness value of the quaternary alloy drastically increases as the composition of As was increased by 0.01 atomic fraction and when the phosphorous concentration decreases from 0.4 to 0.38. The reason may be that the increase in As concentration hardens the lattice when phosphorous concentration was less and hardness decreases when phosphorous was increased.     

Phase transformation of Ni-B, Ni-P diffusion barrier deposited electrolessly on Cu interconnect

In this paper, we report that the phase transformation of Ni-B, Ni-P diffusion barriers deposited electrolessly on Cu, for the reason that the Ni-P layer is a more effective diffusion barrier than the Ni-B layer. The Ni₃B crystallized was decomposed to Ni and B₂O₃ above 400 °C and the Ni₃P crystallized was decomposed to Ni and P₂O₅ above 600 °C respectively in Ar atmosphere. Also, the Ni₃B was decomposed to Ni and free B above 400 °C and the Ni₃P was decomposed to Ni and free P above 600 °C respectively in H₂ atmosphere. The decomposed Ni formed a solid solution with Cu. The Cu diffusion occurred above 400 °C for Ni-B layer and above 600 °C for Ni-P layer, respectively. Because the decomposition temperature of Ni-P layer is about 200 °C higher than that of Ni-B layer, the Ni-P layer is a more effective barrier for Cu than the Ni-B layer.     

Microstructure of laser melted Al18B4O33w/2024Al composite

The microstructure of a laser treated Al₁₈B₄O₃₃w/2024Al composite has been investigated using transmission electron microscope (TEM), low-angle (glancing angle) X-ray diffraction (XRD) techniques. Various surface microstructures were observed in the laser treated composite. The Al₁₈B₄O₃₃ whisker on the surface of the composite was decomposed during laser surface melting, various decomposition products were studied in the laser treated composite. Eutectic phases and the precipitation in the matrix of the composite with laser-treated were observed. The main phases detected in the molten zone were aluminum and decomposition products Al₂O₃. The effect of laser treatment on the hardness of the composite was also examined. A surface hardness of 400 Hv was noted.     

非均匀散射层矢量辐射传输(VRT)方程高阶散射解的迭代法

将散射介质层在z轴方向划分成薄层，用薄层的一阶散射强度、Fourier变换和迭代方法求解散射介质整层的矢量辐射传输(VRT)方程的高阶散射解.该方法将一阶散射与高阶散射迭代结合起来，计算公式简明，可计算高阶迭代解，计算时间少.计算结果与一层均匀散射介质的VRT方程一阶Mueller矩阵解、半空间均匀散射介质二阶Mueller矩阵解、以及离散坐标-特征值特征矢量法的VRT热辐射的数值解作了全面的比较.提出并讨论了非均匀散射层主动与被动VRT方程的高阶解.本计算程序可以通用于非球形粒子多层结构及非均匀介质的散射和热辐射计算. 关键词： VRT方程 分层 迭代解     

Ruthenium-catalyzed regioselective synthesis of 2-substituted indoles via ring-opening of epoxides by anilines

Anilines react with epoxides in dioxane at 180°C in the presence of a catalytic amount of a ruthenium catalyst along with tin(II) chloride to afford 2-substituted indoles in moderate to good yields.     

Synthesis and electrical characteristics of polyaniline nanoparticles and their polymeric composite

Monodisperse polyaniline nanoparticles (PAPSSA) were synthesized from an oxidative dispersion polymerization using poly(sodium 4-styrenesulfonate) (PSSA) as both a polymeric stabilizer and a dopant agent due to its acidity. The nanoparticles were being stabilized with two different molecular weight of PSSA. Size effect of PAPSSA particles were examined by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and dynamic light scattering (DLS). The d.c. electrical conductivity of composite films on the glass substrate was measured by a four-probe method. It was found that the electrical properties of the composite films are affected by the content of nano-sized polyaniline and different molecular weights of stabilizer in the poly(vinyl alcohol) (PVA) matrix.     

具有种内互惠作用的Lotka-Volterra互惠共存模型

对具有种内互惠作用的Lotka-Volterra互惠共存模型进行了完整的全局分析，得到了一些新的结果。