The Chemical Scaffold of Theranostic Radiopharmaceuticals: Radionuclide,Bifunctional Chelator,and Pharmacokinetics Modifying Linker

Therapeutic radiopharmaceuticals have been researched extensively in the last decade as a result of the growing research interest in personalized medicine to improve diagnostic accuracy and intensify intensive therapy while limiting side effects. Radiometal-based drugs are of substantial interest because of their greater versatility for clinical translation compared to non-metal radionuclides. This paper comprehensively discusses various components commonly used as chemical scaffolds to build radiopharmaceutical agents, i.e., radionuclides, pharmacokinetic-modifying linkers, and chelators, whose characteristics are explained and can be used as a guide for the researcher.     

Thermal,electrical and electrochemical properties of ionic liquid-doped poly(ethylene oxide)–LiTDI polymer electrolytes for Li-ion batteries

Journal of Solid State Electrochemistry - In the present study, we report the synthesis and characterisation of solid polymer electrolytes (SPEs) based on polymer poly(ethylene oxide) (PEO), salt...     

Not So Innocent After All: Interfacial Chemistry Determines Charge-Transport Efficiency in Single-Molecule Junctions

Most studies in molecular electronics focus on altering the molecular wire backbone to tune the electrical properties of the whole junction. However, it is often overlooked that the chemical structure of the groups anchoring the molecule to the metallic electrodes influences the electronic structure of the whole system and, therefore, its conductance. We synthesised electron-accepting dithienophosphole oxide derivatives and fabricated their single-molecule junctions. We found that the anchor group has a dramatic effect on charge-transport efficiency: in our case, electron-deficient 4-pyridyl contacts suppress conductance, while electron-rich 4-thioanisole termini promote efficient transport. Our calculations show that this is due to minute changes in charge distribution, probed at the electrode interface. Our findings provide a framework for efficient molecular junction design, especially valuable for compounds with strong electron withdrawing/donating backbones.     

Characteristic of the photoconductivity of thallium monoselenide

Systematic investigations on thallium monoselenide single crystal photoconductivity were reported at 300 K as a function of excitation intensity, side illumination, and wavelength. The samples were prepared using Bridgman technique. The photoconductivity as a function of the modulation frequency of the incident light was plotted at different values of light intensity. The effect of light intensity on the photocarrier lifetime was studied. The relation between the photocurrent and applied voltage at different values of light intensity was represented graphically. Side illumination effect in all these relations was checked. The spectral distribution of the photoconductivity of TlSe in the spectral region 1.24 ev to 1.77 ev was measured, and the energy gap was evaluated. All results were discussed and analyzed. Studies for such samples are very important and necessary in order to understand their use as photoconductor.     

Different Dimensionalities,Morphological Advancements and Engineering of g-C3N4-Based Nanomaterials for Energy Conversion and Storage

Graphitic carbon nitride (g-C₃N₄) has gained tremendous interest in the sector of power transformation and retention, because of its distinctive stacked composition, adjustable electronic structure, metal-free feature, superior thermodynamic durability, and simple availability. Furthermore, the restricted illumination and extensive recombination of photoexcitation electrons have inhibited the photocatalytic performance of pure g-C₃N₄. The dimensions of g-C₃N₄ may impact the field of electronics confinement; as a consequence, g-C₃N₄ with varying dimensions shows unique features, making it appropriate for a number of fascinating uses. Even if there are several evaluations emphasizing on the fabrication methods and deployments of g-C₃N₄, there is certainly an insufficiency of a full overview, that exhaustively depicts the synthesis and composition of diverse aspects of g-C₃N₄. Consequently, from the standpoint of numerical simulations and experimentation, several legitimate methodologies were employed to deliberately develop the photocatalyst and improve the optimal result, including elements loading, defects designing, morphological adjustment, and semiconductors interfacing. Herein, this evaluation initially discusses different dimensions, the physicochemical features, modifications and interfaces design development of g-C₃N₄. Emphasis is given to the practical design and development of g-C₃N₄ for the various power transformation and inventory applications, such as photocatalytic H₂ evolution, photoreduction of CO₂ source, electrocatalytic H₂ evolution, O₂ evolution, O₂ reduction, alkali-metal battery cells, lithium-ion batteries, lithium–sulfur batteries, and metal-air batteries. Ultimately, the current challenges and potential of g-C₃N₄ for fuel transformation and retention activities are explored.     

Behaviour of switching phenomena in single crystals of TlGaTe2

Current-voltage characteristics measured on TlGaTe₂ single crystals reveal switching effects at temperatures below 263 K. The current-voltage characteristics are symmetric with respect to the polarity of the applied field. The threshold parameters for switching are found to depend on temperature, illumination intensity and sample thickness.     

Temperature dependences of the electrical conductivity and hall coefficient of indium telluride single crystals

Conductivity type, carrier concentration and carrier mobility of InTe samples grown by Bridgmann technique were determined by the Hall effect and electrical conductivity measurements. The study was performed in the temperature range 150–480 K. Two samples with different growth rate were used in the investigation. The samples under test were P-type conducting, in accordance with previous measurements of undoped material. The Hall coefficient was found to be isotropic yielding room temperature hole concentration in the range 10¹⁵ – 10¹⁶ cm⁻³. The hole mobilities of InTe samples were in the range 1.17 × 10³ – 2.06 × 10³ cm²/V · sec at room temperature. The band – gap of InTe determined from Hall coefficient studies has been obtained equal to 0.34 ev. The scattering mechanism was checked, and the electrical properties were found to be sensitive to the crystal growth rate.