Optical microscopic,X-ray diffraction,and electrical resistance studies of CuCl at high pressure

Electrical resistance and X-ray diffraction measurements and also optical observations under a polarizing microscope were made on CuCl to pressures in excess of 12.5 GPa at room temperature using a diamond anvil cell. Resistance measurements were also performed in a piston-cylinder apparatus to pressures of approximately 5.5 GPa at room temperature. Three samples of CuCl prepared by different methods were examined. No anomalous pressure dependence in electrical resistance was found in the pressure range studied, and no dramatic changes in optical transmission were observed up to pressures of approximately 10.0 GPa. Optical observations and X-ray diffraction measurements indicate the existence of four phases in the pressure range studied, including a nonconducting black opaque phase which grows with time when CuCl is left for several days at the highest pressures.     

Epitaxial growth of Nb3Ge on Nb3Ir and Nb3Rh

This is a report on a cooperative research carried out in Stanford University to investigate the possibility of using epitaxy to prepare the high T_c superconductor Nb₃Ge in an A15 crystalline structure at the 3:1 stoichiometry.Nb₃Ir polycrystalline films with the A15 structure deposited on sapphire were used as substrates for the epitaxial growth of Nb₃Ge because of the favorable lattice parameter match. The experimental results clearly show that epitaxial growth indeed occurs and helps to extend the range of homogeneity of the A15 phase up to 26.3 at.% Ge as compared with the thermodynamic equilibrium boundary at 19 at.% Ge. We also used Nb₃Rh films as substrates and found them inferior to Nb₃Ir because of the multiphase nature of the films.In addition to extending the A15 phase boundary epitaxy results in a considerable rise in the superconducting transition temperature for Ge-rich samples together with a reduction in the transition width. The work suggests that polycrystalline epitaxy can be an important tool in the synthesis of thin-film intermetallic compounds.     

15N NMR spectroscopy. 23—Shift effects of protecting groups in oligopeptides of glycine and alanine

The natural abundance ¹⁵N NMR spectra of glycylglycine and alanylalanine derivatives with various N- or O-protecting groups were measured in dimethyl sulphoxide, pyridine and fornic acid. The nitrogens directly attached to the protecting group have chemical shifts relative to NO₃^? in the range ?220 to ?358 ppm. The influence of the amino end group on the next peptide nitrogen (Gly-Gly bond) amounts to, at most, 1.7 ppm. The influence of the O-protecting group is also weak (Δ δ?2 ppm), but strongly dependent on the solvent.     

Ultra-violet finiteness of supersymmetric non-linear sigma models

It is shown that N = 4 supersymmetric non-linear sigma models in two spacetime dimensions are ultra-violet finite to all orders in perturbation theory.     

Luminescence characteristics of InAlP---InGaP heterostructures having native-oxide windows

Data are presented on the luminescence characteristics of InGaP/InAlP heterostructures with oxidized InAlP cladding layers grown by metalorganic chemical vapor deposition. The structures are grown on GaAs substrates and consist of either a 20 nm thick In_0.5Ga_0.5P quantum well or a 0.75 μm InGaP layer sandwiched between two InAlP bulk barriers or between two 10-period In_0.5Al_0.5P/In_xGa_1−xP strain-modulated superlattice heterobarriers, where x varies from 0.5 to 0.45 and the period of the superlattice is 3 nm. The top InAlP cladding layer of the InAlP/InGaP heterostructures is oxidized for 2–5.5 h at 500°C in an ambient of H₂O vapor saturated in a N₂ carrier gas. Photoluminescence and time-resolved photoluminescence studies at room temperature show that, as a result of the oxidation of a portion of the top InAlP cladding layer, the photoluminescence emission intensity and lifetime from the InGaP QWs increase significantly.     

Iridium Oxide Film Electrodes for Anodic Stripping Voltammetry

The new iridium oxide film electrode, applied for the determination of lead(II), cadmium(II) and copper(II) traces using differential pulse anodic stripping voltammetry (DP ASV) is presented. The electrode display an interesting stripping voltammetric performance which compares with electrodes commonly used in voltammetry. The deposited film is known as anodically electrodeposited iridium oxide film (AEIROF). The AEIROF electrode is characterized by long‐term stability (more than 40 days) and very good reproducibility of the analytical signals in this time (≤12% for 0.5 μM of lead). The regeneration of iridium film is very simple in a time shorter than 60 seconds. The effects of various factors such as: thickness of AEIROF film, preconcentration potential and time, supporting electrolyte composition, potential interferences are optimized. The detection limit for AEIROF film electrode based on glassy carbon for an accumulation time of 30 s is as low as 7 nM for lead(II). The repeatability of the method at a concentration level of the lead(II) as low as 0.5 μM, expressed as RSD is 2.5% (n=10). The proposed method was successfully applied and validated by studying certified reference material CTA‐OTL‐1. Such an attractive use of ‘mercury–free’ ‐ environmentally friendly electrodes offers great promise to measure trace metals.     

Copper and iron interactions with angiotensin-converting enzyme inhibitors. A study by fast-atom bombardment tandem mass spectrometry

Fast atom bombardment, combined with high-energy collision-induced tandem mass spectrometry, has been used to investigate gas-phase metal-ion interactions with captopril, enalaprilat and lisinopril, all angiotensin-converting enzyme inhibitors.Suggestions for the location of metal-binding sites are presented. For captopril, metal binding occurs most likely at both the sulphur and the nitrogen atom. For enalaprilat and lisinopril, binding preferably occurs at the amine nitrogen. Copyright 1999 John Wiley & Sons, Ltd.     

Numerical Modeling of Elastic Spherical Contact for Mohr-Coulomb Type Failures in Micro-Geomaterials

The contact behavior for geological materials, such as reservoir shale rock, is simulated using the finite element method by considering a nano-indenter tip indenting into a geomaterial obeying the Mohr-Coulomb failure criterion. The deformation and slip at the micro-scale along the shear direction in grain-to-grain contact follows the Coulomb frictional/sliding failure criterion, while the linear elastic force-displacement law is enforced in the direction normal to the contact surface. A series of simulations are performed to study the effect of cohesion, friction angle, and tensile strength on the contact response. For a material with very high cohesion and frictionless contact, the indented geomaterial behaves almost purely as an elastic medium. In this case, the indentation process converges to the classic Hertz grain-to-grain spherical contact model. For a material with extremely low cohesion, the geomaterial behaves like cohesionless granular material at the micro-scale. For materials with finite cohesion values, such as shales, the force-displacement responses are analyzed and reported. This simulation is compared to micro-indentation tests using a spherical indenter tip conducted on preserved samples of Woodford shale.