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71.
72.
Gwang Hui Kim 《Journal of Mathematical Analysis and Applications》2004,299(2):375-391
In this paper we investigate a generalization of the Hyers-Ulam-Rassias stability for a functional equation of the form f(φ(X))=?(X)f(X)+ψ(X) and the stability in the sense of Ger for the functional equation of the form f(φ(X))=?(X)f(X), where X lie in n-variables. As a consequence, we obtain a stability result in the sense of Hyers-Ulam-Rassias, Gǎvruta, and Ger for some well-known equations such as the gamma, beta, and G-function type's equations. 相似文献
73.
LI Na ZHAO Degang & YANG Hui State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing China 《中国科学G辑(英文版)》2004,47(6):694-701
Because of their large band-gap, large high-field electron velocity, large breakdownfield, and large thermal conductivity, GaN and its heterojunction with AlGaN and InGaNhave foreseeable potential in the applications of high-power/temperature electronics, andoptoelectronic devices operative in UV and visible wavelength. Polarization inducedelectric field can reach the magnitude of ~MV/cm[1,2]. For AlGaN/GaN based FETs theconcentration of sheet carrier induced by polarization in the cha… 相似文献
74.
75.
Conventionally, surface roughness is predominantly determined through the use of stylus instruments. However, there are certain limitations involved in the method, particularly when a test specimen, such as a silicon wafer, has a smooth mirror-like surface. Hence, it is necessary to explore alternative non-contact techniques. Light scattering has recently been gaining popularity as an optical technique to provide prompt and precise inspection of surface roughness. In this paper, the total integrated scattering (TIS) model is modified to retrieve parameters on surface micro-topography through light scattering. The applicability of the proposed modified TIS model is studied and compared with an atomic force microscope. Experimental results obtained show that the proposed technique is highly accurate for measuring surface roughness in the nanometer range. 相似文献
76.
QiaoHongYAO FuYouLI LuSHAN ChunHuiHUANG DongDongYIN 《中国化学快报》2003,14(11):1185-1188
A new photoresponsive D-π-A dye, mPS, has been designed and synthesized.Compared to the parent dye PS, IPCE values in the region from 400 nm to 560 nm was greatly improved upon changing the attaching group from the p- position to the o- position of the π-conjugation bridge. A solar cell based on mPS generated a remarkably high overall yield η of 5.4% under irradiation of 80.0 mW cm^-2 white light from a Xe lamp, Compared with PS, the overall yield η increased by 64%. 相似文献
77.
报道一种新颖的用于多波长光纤激光器的超结构光纤Bragg光栅(SFBG)梳状滤波器,其突出特点是仅由单个光栅构成、折射率调制和局部啁啾富于变化、反射峰均匀性好、窄带宽和标准的信道间隔.采用基于LP算法的IS光纤光栅设计技术,将整体加窗切趾法改进为各信道独立加窗切趾,成功地设计出所需的SFBG,同时对SFBG的制作技术也进行了探讨.用传输矩阵法分析反射谱、时延曲线和群时延抖动.结果表明,所设计的SFBG满足各项设计指标要求,在DWDM系统中,这种新颖的SFBG可望成为用于多波长光纤激光器的最理想的高性 能梳
关键词:
超结构光纤Bragg光栅
光栅设计
梳状滤波器 相似文献
78.
We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals. 相似文献
79.
杨慧 《原子与分子物理学报》2002,19(4):411-416
以二维复式晶格作为有限系统的集团模型,在紧束缚近似下,计算了π电子在最近邻及次近邻跳跃集团的态密度.讨论了不同结构参数对态密度及带宽的影响. 相似文献
80.
A molecular dynamics method has been used to simulate the argon ion-assisted deposition of Cu/Co/Cu multilayers and to explore ion beam assistance strategies that can be used during or after the growth of each layer to control interfacial structures. A low-argon ion energy of 5–10 eV was found to minimize a combination of interfacial roughness and interlayer mixing (alloying) during the ion-assisted deposition of multilayers. However, complete flattening with simultaneous ion assistance could not be achieved without some mixing between the layers when a constant ion energy approach was used. It was found that multilayers with lower interfacial roughness and intermixing could be grown either by modulating the ion energy during the growth of each metal layer or by utilizing ion assistance only after the completion of each layers deposition. In these latter approaches, relatively high-energy ions could be used since the interface is buried and less susceptible to intermixing. The interlayer mixing dependence upon the thickness of the over layer has been determined as a function of ion energy. 相似文献