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91.
等离子体反应器中传热与流动的三维数值模拟 总被引:4,自引:0,他引:4
本文采用我们新发展的三维计算机程序,对有载气和颗粒从单个喷孔侧向喷射的等离子体反应器中的传热与流动以及颗粒的运动轨迹与加热历程进行了三维数值模拟,并与相应的二维数值模拟结果进行了比较。模拟结果表明侧向喷入的载气所引起的三维流动效应相当明显,不同的颗粒在反应器内的运动轨迹与加热历程也有明显差别。 相似文献
92.
Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation 下载免费PDF全文
The hardening of the buried oxide (BOX) layer of separation by implanted
oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation
was investigated by implanting ions into the BOX layers. The tolerance to
total-dose irradiation of the BOX layers was characterized by the
comparison of the transfer
characteristics of SOI NMOS transistors before and after irradiation to
a total dose of 2.7
Mrad(SiO2. The experimental results show that the implantation of
silicon ions into the BOX layer can improve the tolerance of the BOX layers
to total-dose irradiation. The investigation of the mechanism of the
improvement suggests that the deep electron traps introduced by silicon
implantation play an important role in the remarkable improvement in
radiation hardness of SIMOX SOI wafers. 相似文献
93.
94.
Shi Hu Han Xi Liang Wang Yong Fan 《International Journal of Infrared and Millimeter Waves》2006,27(10):1391-1402
An improved generalized admittance (GAM) matrix technique is presented in this paper. Matrix transformation eliminates the
singularity factor of GAM, denominator (1+Γ), because of new presentations of GAM. The relationship equations between II-port
current and I-port incidence wave is computed by mode matching method. The generalized scattering matrix (GSM) of waveguide
structure and its discontinuity problems is obtained with relationship equations and reflection coefficients. The GSM’s of
millimeter-wave multistepped bend and T-junction in rectangular waveguide are computed by the improved GAM technique. The
results comparisons between the proposed method and commercial software HFSS10.0 show the validity of the proposed method,
which improves the validity of the GAM technique and reduces mathematical efforts. It is general, very efficient and can be
used to solve other complicated and multiport network problems. 相似文献
95.
聚合物纳米孔隙增透膜制备工艺的研究 总被引:4,自引:0,他引:4
论述了聚合物纳米孔隙增透膜的制备工艺流程,分析了聚合物材料分子量、实验环境温度和湿度、溶剂挥发性等条件对纳米孔隙增透膜的影响。研究表明,聚合物材料分子量的增大、温度的降低、湿度的升高以及采用挥发性弱的溶剂都将导致增透膜孔隙尺寸的增大,孔隙越大其对光的散射损耗就会增大,所以增透膜的透过率就越低。通过大量的试验分析得出一组较理想的工艺参量:使用低分子量的聚合物材料(小于15 kg/mol),环境温度大于25℃、环境相对湿度小于30%,在采用低沸点的溶剂如四氢呋喃等措施下可有效降低增透膜散射损耗。 相似文献
96.
The behavior of copper precipitation in cast multicrystalline silicon (mc-Si) annealed at different temperatures under air cooling (30 K/s) or slow cooling (0.3 K/s) was investigated by scanning infrared microscopy (SIRM). Comparing to Czochralski-grown silicon (Cz-Si), copper precipitated more easily in mc-Si, and the lowest temperature of copper precipitation in mc-Si was about 700 °C, lower than that in Cz-Si. It was also observed that copper preferably precipitated on grain boundaries so that near the grain boundaries the denuded zone formed. The results indicate that the defects including dislocations, grain boundaries and microdefects, as the heteronucleation sites, enhanced copper precipitation. Moreover, cooling rates had a great influence on the copper precipitation, especially at lower annealing temperatures. Generally air cooling led to the formation of high density of copper-precipitate colonies. 相似文献
97.
98.
Semiconductor optical amplifier used as regenerator for degraded differential phase-shift keying signals 下载免费PDF全文
Phase and amplitude regeneration are necessary for degraded differential phase-shift keying communication systems.This paper proposes a regenerator based on semiconductor optical amplifier for differential phase-shift keying signals.The key regeneration mechanism is theoretically analysed.The effectiveness of semiconductor optical amplifier based regenerator is demonstrated by comparing the bit error rate and eye diagrams before and after regeneration for 40-Gbit/s differential phase-shift keying 1080-km transmission systems.The results show that regeneration effects are very well.Bit error rate is less than 10 12 with the regenerator. 相似文献
99.
Interactions between CdSe/CdS quantum dots and DNA through spectroscopic and electrochemical methods
Qisui Wang Lu YangTingting Fang Shuang WuPeng Liu Xinmin Min Xi Li 《Applied Surface Science》2011,257(23):9747-9751
The interaction of CdSe/CdS quantum dots (QDs) with Herring sperm-DNA (hs-DNA) has been studied by UV-vis spectroscopy and electrochemical method. Cu(phen)22+/1+ (phen = 1, 10-phenanthroline) was used as an indicator for electroactive dsDNA or ssDNA. The apparent association constant has been deduced (4.94 × 103 M−1 and 2.39 × 102 M−1) from the absorption spectral changes of the dsDNA-QDs and ssDNA-QDs. The results of dissociation method suggest that Cu(phen)22+/1+ is more easily dissociated from dsDNA or ssDNA modified gold electrode (dsDNA/Au or dsDNA/Au) in presence of QDs. The dissociation rate constant (k) of Cu(phen)22+/1+ on dsDNA/Au is 4.48 times higher than that in absence of QDs, while k is 2.34 times higher than that in absence of QDs on ssDNA/Au in Tris buffer with low ionic strength (pH 7.0, 0.5 mM NaCl). The results illuminate that hs-DNA has high affinity for QDs due to electrostatic force, hydrogen bonds, and van der Waals interactions, and the binding force of QDs with dsDNA is stronger than ssDNA. 相似文献
100.
A linearized tensor renormalization group algorithm is developed to calculate the thermodynamic properties of low-dimensional quantum lattice models. This new approach employs the infinite time-evolving block decimation technique, and allows for treating directly the transfer-matrix tensor network that makes it more scalable. To illustrate the performance, the thermodynamic quantities of the quantum XY spin chain as well as the Heisenberg antiferromagnet on a honeycomb lattice are calculated by the linearized tensor renormalization group method, showing the pronounced precision and high efficiency. 相似文献