Study of asymmetric charge writing on Pb(Zr,Ti)O3 thin films by Kelvin probe force microscopy

Polycrystalline Pb(Zr_0.55Ti_0.45)O₃ thin film was deposited on Pt/Ti/SiO₂/Si(1 0 0) by radio-frequency-magnetron sputtering method, and the writing of charge bits on the surface of PZT thin film was studied by Kelvin probe force microscopy. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones. When ferroelectric polarization switching occurs, the potential difference becomes even more remarkable. A qualitative model was proposed to explain the origin of the asymmetric charge writing. It is demonstrated that the internal field in the interface layer, which is near the ferroelectric/electrode interface in ferroelectric film, is likely to be the cause for the occurrence of this phenomenon.     

共振下n维Lienard型方程的2π周期解

本文在跨共振点条件下证明n维Lienard型方程存在2π周期解.     

Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

This paper reports that the growth of RuO_x(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO_x(110) rotated by an angle of 120℃. The as-grown RuO_x(110) thin layer is expanded from the bulk-truncated RuO_x(110) due to the large mismatch between RuO_x(110) and the Ru(0001) substrate. The results also indicate that growth of RuO_x(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO_x(110).     

关于四元数矩阵乘积迹的不等式

设 H~(m×n)为 m×n 四元数矩阵的集合,σ_1(A)≥…≥σ_n(A)为 A∈H~(mxn)的奇异值。本文证明了:1)设 A∈H~(mxm),B∈H~(mxm),r=min(m,m),则|tr(4B)|≤c r σ_i(A)σ_i(B).2)设 A_i∈H~(mxm),i=1,2,…,n,(A_1A_2…A_n)k为 A_1A_2…A_n 的任一个 k 阶主子阵,则|tr(A_1.A_2…A_n)_k|≤sun form i=1 to k σ_i(A_1)…σ_i(A_n).我们还得到四元数矩阵迹的其它一些不等式。这些结果推广和改进了文[1],[2]中的结果,进一步解决了 Bellman 猜想。     

大学物理实验中分类教学的探索和研究

本文对大学物理实验课程的教学现状进行了分析,提出了对大学物理实验课程进行分类教学改革的指导思想和遵循的原则及采取的措施。     

Modified gravity on the brane and dark energy

We analyze the dynamics of an AdS₅ braneworld with matter fields when gravity is allowed to deviate from the Einstein form on the brane. We consider exact five-dimensional warped solutions which are associated with conformal bulk fields of weight –4 and describe on the brane the following three dynamics: those of inhomogeneous dust, of generalized dark radiation, and of homogeneous polytropic dark energy. We show that, with modified gravity on the brane, the existence of such dynamical geometries requires the presence of non-conformal matter fields confined to the brane.     

LONG-TIME BEHAVIOR OF A CLASS OF REACTION DIFFUSION EQUATIONS WITH TIME DELAYS

The present paper devotes to the long-time behavior of a class of reaction diffusion equations with delays under Dirichlet boundary conditions. The stability and global attractability for the zero solution are provided, and the existence, stability and attractability for the positive stationary solution are also obtained.     

Three New Polyoxygenated Steroids from Two Species of the South China Sea Gorgonian Muricella flexuosa and Menella verrucosa Brundin

Three new polyoxygenated steroids, muricesteroid ( 1 ), and menellsteroids A ( 2 ) and B ( 3 ), were isolated from two species of the South China Sea gorgonian Muricella flexuosa and Menella verrucosa Brundin , respectively. The structures of these new compounds were elucidated on the basis of extensive spectroscopic analysis, chemical methods and comparison with known related compounds.     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

a-C:F薄膜的热稳定性与光学带隙的关联

以CF4和C6H6的混合气体作为气源,在微波电子回旋共振化学气相沉积(ECRCVD)装置中制备了氟化非晶碳薄膜(aC:F),并在N2气氛中作了退火处理以考察其热稳定性.通过傅里叶变换红外吸收谱和紫外可见光谱获得了薄膜中CC双键的相对含量和光学带隙,发现膜中CC键含量与光学带隙之间存在着密切的关联,在高微波功率下沉积的氟化非晶碳膜具有低的光学带隙和较好的热稳定性. 关键词： 氟化非晶碳膜 光学带隙 退火温度 热稳定性