First observation of yrast band in odd-odd162Lu

High spin states of the odd-odd¹⁶²Lu nucleus have been studied via¹⁴⁷Sm(¹⁹F,4nγ)¹⁶²Lu reaction at 95 MeV beam energy. Level scheme for yrast band based onπ[h_11/2 v[i_13/2] quasiparticle configuration was established up to I ^π = (23^?) for the first time. This band shows the signature inversion in energy before backbending generally appeared in this mass region. It is stressed that the signature splitting in¹⁶²Lu is larger than that in the¹⁶⁰Tm nucleus.     

也谈长直螺线管磁场的全空间解

本文证明了长直螺线管上电流密度沿螺线管圆周切线方向分量和电流密度沿螺线管轴线方向分量与θ无关。并给出了长直密绕通电螺线管磁场的全空间解。     

On the double commutant of Cowen-Douglas operators

Let T be a Cowen-Douglas operator. In this paper, we study the von Neumann algebra V^?(T) consisting of operators commuting with both T and T^? from a geometric viewpoint. We identify operators in V^?(T) with connection-preserving bundle maps on E(T), the holomorphic Hermitian vector bundle associated to T. By studying such bundle maps, the structure of V^?(T) as well as information on reducing subspaces of T can be determined.     

深蚀刻二元光学元件

提出一种新颖的，蚀刻位相深度超过２π的深蚀刻二元光学技术，并从理论上分析深蚀刻二元光这元件与衍射效率的关系，然后用计算机进行模拟与分析，得到深蚀刻二元光学元件特性后一些初步研究结果。     

Some sufficient conditions for tunnel numbers of connected sum of two knots not to go down

In this paper, we show the following result: Let K _i be a knot in a closed orientable 3-manifold M _i such that (M _i ,K _i ) is not homeomorphic to (S ₂ ×S ₁, x ₀ ×S ₁), i = 1, 2. Suppose that the Euler Characteristic of any meridional essential surface in each knot complement E(K _i ) is less than the difference of one and twice of the tunnel number of K _i . Then the tunnel number of their connected sum will not go down. If in addition that the distance of any minimal Heegaard splitting of each knot complement is strictly more than 2, then the tunnel number of their connected sum is super additive.     

Determination of a differential pencil from interior spectral data

In this paper, inverse spectra problems for a differential pencil are studied. By using the approach similar to those in Hochstadt and Lieberman (1978) [14] and Ramm (2000) [26], we prove that (1) if p(x) (or q(x)) is full given on the interval [0,π], then a set of values of eigenfunctions at the mid-point of the interval [0,π] and one spectrum suffice to determine q(x) (or p(x)) on the interval [0,π] and all parameters in the boundary conditions; (2) if p(x) (or q(x)) is full given on the interval [0,π], then some information on eigenfunctions at some internal point and parts of two spectra suffice to determine q(x) (or p(x)) on the interval [0,π] and all parameters in the boundary conditions.     

柔性有机场效应晶体管研究进展

柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域. 关键词： 柔性 晶体管 有机/聚合物 溶液加工     

Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (R_S/R_D) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters.     

基于异步时序的高帧频相机垂直拖尾处理

介绍一种高帧频相机垂直拖尾影响的解决方法,该方法同时考虑连续采集模式下帧间图像和像元合并（binning）技术的影响。与常用的静态图像拖尾处理的算法如逆向逐行修正算法相比,该算法非常适用于连续图像拖尾处理,特别是经过Binning后获取的图像。在某自主研制的基于异步时序的40 000 帧/秒高速相机中应用该方法,有效去除了拖尾影响。最后,运用该方法处理的图像验证了算法的有效性。