Logarithmic Sobolev trace inequality

A logarithmic Sobolev trace inequality is derived. Bounds on the best constant for this inequality from above and below are investigated using the sharp Sobolev inequality and the sharp logarithmic Sobolev inequality.

     

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

Al₂O₃ incorporated HfO₂ films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al₂O₃ incorporation. The incorporation of Al₂O₃ into the HfO₂ film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO₂ film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO₂ film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al₂O₃ on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO₂ contributed to Hf silicide formation on the film surface.     

Positive Schatten(-Herz) Class Toeplitz Operators on the Half-space

On the harmonic Bergman space of the half-space, we give characterizations for an arbitrary positive Toeplitz operator to be a Schatten (or Schatten-Herz) class operator in terms of averaging functions and Berezin transforms. Examples are provided to show that various results are sharp. This research was supported by KOSEF(R01-2003-000-10243-0).     

A Reverse of bessel’s inequality in 2-inner product spaces and some grüss type related results with applications

A reverse of Bessel’s inequality in 2-inner product spaces and companions of Grüss inequality with applications for determinantal integral inequalities are given.     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp     

Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

The adhesion of Cu on Ru substrates with different crystal orientations was evaluated. The crystal orientation of sputter deposited Ru could be changed from (1 0 0) to (0 0 1) by annealing at 650 °C for 20 min. The adhesion of Cu was evaluated by the degree of Cu agglomeration on Ru. Cu films on annealed Ru films with the (0 0 1) crystal orientation showed 28% lower RMS values and 50% lower Ru surface coverage than Cu as-deposited on Ru having the (1 0 0) crystal orientation after annealing at 550 °C for 30 min, which suggest that Cu wettability on the Ru(0 0 1) was better than that on the Ru(1 0 0) plane. The low lattice misfit of 4% between Cu(1 1 1) and Ru(0 0 1) may be the reason for this good adhesion property.     

Nusselt number correlations for heat transfer to small spheres in thermal plasma flows

Seven different equations predicting heat transfer rates to small spheres in plasma flows are examined considering argon and nitrogan as plasma gases from 300 to 21,000 K at 1 atm. For argon there is a general consensus up to 9000 K, beyond which wide deviations in behavior occur. For nitrogen, the seven correlations are in good agreement up to 4000 K, but show substantial deviations beyond this value. Comparisons with the sparsely available experimental data are made for argon from 300 to 17,000 K and for nitrogen up to 5500 K. Disagreement between the various correlations and experiment can exceed one order of magnitude.     

A family of maximal surfaces in Lorentz-Minkowski three-space

We prove the existence of an infinite family of complete spacelike maximal surfaces with singularities in Lorentz-Minkowski three-space and study their properties. These surfaces are distinguished by their number of handles and have two elliptic catenoidal ends.