衍射光学元件衍射效率影响混合光学系统性能的一种分析方法

本文从衍射光学元件的衍射效率入手,详细地分析了衍射光学元件衍射效率同混合光学系统光学传递函数的关系,并通过一个实际例子对所分析的结果进行了深入讨论.     

类金刚石薄膜红外光学常数的计算机拟合

报道了一种对类金刚石薄膜红外透射率曲线最小二乘法拟合的方法，确定类金刚石薄膜的红外光学常数－折射率、吸收系数以及薄膜厚度及表面粗糙度。介绍了相应的数学模型，并给出了对类金刚石薄膜样品的实验测及拟合结果。     

强激光等离子体中光子的运动

通过严格求解广义协变的光子运动的测地线方程,讨论了准静态时一线等温膨胀的自洽激光等离子体中光子的运动.用数值方法得到了光子速度的空间分布曲线. 关键词：     

二元扩散偶界面的元素扩散和金属间相的形成

根据元素扩散数据、相形成热和它们的稳定性, 分析了二元扩散偶界面元素扩散和中间相的形成.并实验研究了Ti-Ni, Nb-Sn 和Ta-Pt 三个系统. 关键词：     

液滴低速撞击润湿球面现象观测分析

采用高速摄像仪以10000 帧/s的拍摄速度对液滴低速撞击润湿球体表面过程进行了实验观测, 分析了液滴撞击后的反弹、局部反弹和铺展等现象, 考察了黏度对撞击过程的影响; 在此基础上, 定量讨论了液滴铺展特征参数随撞击速度、球体直径和黏度的变化规律. 观测发现: 黏度较大且撞击速度较低时, 撞击后可能出现反弹和局部反弹, 黏度较小时则不发生; 铺展面积随撞击速度的增大而增大; 黏度增大时, 铺展因子减小; 在球体直径为4–20 mm范围内, 随着球体直径的增加, 铺展因子呈上升趋势. 关键词： 液滴撞击 润湿球面 铺展 黏度     

Bi2Te3拓扑绝缘体表面颗粒化铅膜诱导的超导邻近效应

拓扑绝缘体的出现为寻找拓扑超导体和Majorana费米子提供了一种可能的途径. 在拓扑绝缘体Bi₂Te₃表面沉积极薄的不连续铅膜, 试图通过邻近效应感应出大片的超导区, 为下一步研究拓扑超导电性创造条件.借助四引线电输运测量实验, 在0.25 K的低温下看到了超流现象, 表明沉积在Bi₂Te₃表面的厚度小于20 nm的颗粒化铅膜能够诱导邻近效应, 并且使大片Bi₂Te₃超导. 关键词： 超导邻近效应 S-N-S结 拓扑绝缘体     

Design of dispersive multilayer with particle swarm optimization method

<正>We present a new and efficient method for the design of dispersive multilayer by employing a particle swarm optimization(PSO) technique.Its mathematical background is given and an adaptive PSO is realized with computer code.Two practical designing tasks are solved with this method,and the obtained results are competitive compared with other published structures.The adaptive PSO method demonstrates its merits of fast convergence and powerful global search ability,and could be used as a valuable tool for the optical thin film design.     

5,10,15-三(五氟苯基)Corrole及其相似卟啉化合物的光物理特性

采用稳态和时间分辨的瞬态光谱技术对比研究了一种Corrole化合物5,10,15-三(五氟苯基)Corrole(FtsTPC)和一种卟啉化合物5,10,15,20-四(五氟苯基)卟啉(F20TPP)的光物理特性.结果表明:F15TPC的B带吸收峰较宽而F20TPP的强而窄,F15TPC的Q带有两个吸收峰而F20TPP有四个.F15TPC的荧光量子产率为0.15,荧光寿命为4.8 ns,F20TPP的荧光量子产率为0.05,荧光寿命为11.1 ns;与F20TPP相比F15TPC具有发光效率高、荧光寿命短的特点.F15TPC具有较大的发光速率常数和无辐射跃迁速率常数,这可能是由于F15TPC少了一个氟代苯基,致使其发色团本身的电子结构发生变化所致.另外空间结构的不对称性和非共面性也对其光物理性质有影响.     

Rheological Technique as a Sensitive Method to Characterize the Chain Diffusion across the Interface between Polystyrene and Carbon Black Filled Polystyrene

The mutual diffusion process and interphase development taking place at the interface between disks of polystyrene (PS) and carbon black filled polystyrene (CB-PS) in the molten state were investigated by a small-amplitude, oscillatory shear, rheological technique. The rheological method was employed to probe the thermorheological complexity of these polymer disks. It was found that the dynamic complex shear modulus, G*(t), increased with the time of contact in two time regimes at a fixed frequency. The time of transition between the two regimes was observed to be close to the time needed for the transition from the Rouse mode to the reptation mode. The results showed that the content of the carbon black and the temperature affected the slope of the G*(t) – t curve. Scanning electron microscopy revealed the interface disappeared when the diffusion process was complete.     

Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

The structural and electronic properties of group III rich In_0.53Ga_0.47As(001) have been studied using scanning tunneling microscopy/spectroscopy (STM/STS). At room temperature (300 K), STM images show that the In_0.53Ga_0.47As(001)–(4 × 2) reconstruction is comprised of undimerized In/Ga atoms in the top layer. Quantitative comparison of the In_0.53Ga_0.47As(001)–(4 × 2) and InAs(001)–(4 × 2) shows the reconstructions are almost identical, but In_0.53Ga_0.47As(001)–(4 × 2) has at least a 4× higher surface defect density even on the best samples. At low temperature (77 K), STM images show that the most probable In_0.53Ga_0.47As(001) reconstruction is comprised of one In/Ga dimer and two undimerized In/Ga atoms in the top layer in a double (4 × 2) unit cell. Density functional theory (DFT) simulations at elevated temperature are consistent with the experimentally observed 300 K structure being a thermal superposition of three structures. DFT molecular dynamics (MD) show the row dimer formation and breaking is facilitated by the very large motions of tricoodinated row edge As atoms and z motion of In/Ga row atoms induced changes in As–In/Ga–As bond angles at elevated temperature. STS results show there is a surface dipole or the pinning states near the valence band (VB) for 300 K In_0.53Ga_0.47As(001)–(4 × 2) surface consistent with DFT calculations. DFT calculations of the band-decomposed charge density indicate that the strained unbuckled trough dimers being responsible for the surface pinning.