正向高密度脉冲电流激发下ZnSe MIS二极管中的自由激子发光

本文测量了在77K和正向脉冲电流密度为50～500mA/mm2的激发下,ZnSe MIS二极管的电致发光光谱.首次在高电流密度激发下的ZnSe晶体的电致发光光谱上,观测到自由激子与自由激子间(Ex-Ex)的散射.本中根据自由激子的动能分布,讨论了2LO声子协助的自由激子伴线的形状,发现当激发电流密度增高时,自由激子的有效温度大于晶格温度,这可归结为激子与激子间的非弹性散射.     

非晶态Fe40Ni38Mo4B18（2826MB）合金粉末的高压压结与磁性研究

 本文研究了非晶态软磁材料Fe₄₀Ni₃₈Mo₄B₁₈（2826MB）合金粉末在高压下加温压结成三维大尺寸产品的可行性，并通过压结样品的复数导磁率在弱交变磁场中的行为，探讨了压结条件对压结样品的软磁性能的影响。结果表明，在本实验所采用的压力范围内，压结温度对压结样品的性能的影响大于压结压力的影响。     

氮杂冠醚的研究Ⅱ.N-取代苯并氮杂冠醚的1H和13CNMR谱

本文研究了15种新合成的单、双N取代二苯并18冠6的¹H及¹³C NMR谱。结果表明,¹³C NMR谱的化学位移能显示分子的电荷分布,而¹H NMR谱的偶合常数则部份地反映了大环的构象。氮原子的杂入大环结构和取代基的改变对聚醚环上的电荷分布影响的结果说明,这些改变可能会对冠醚的络合作用发生影响。     

拱形试件动态断裂的动光弹分析

本文采用动光弹方法,分析了对带边裂纹的拱形三点弯曲试件在抢击加载条件下的瞬态反应。从多火花动光弹仪记录下来的16幅断裂过程的照片和微机输出的电火花光信号图上,得到了各时刻的等差线图形和裂纹长度。使用运动裂纹尖端附近的应力场解,去计算动应力强度因子。对环氧树脂材料,测定了动态应力强度因子与裂纹扩展速度之间的关系,并给出了当裂纹扩展速度达到410m/s时,为裂纹产生分叉的条件。     

FURTHER STUDY OF THE RELATION OF VON KF8B6RMN EQUATION FOR ELASTIC LARGE DEFLECTION PROBLEM AND SCHRDINGER EQUATION FOR QUANTUM EIGENVALUES PROBLEM

This work is the continuation and improvement of the discussion of Ref. [1]. We also improve the discussion of Refs. [2–3] on the elastic large deflection problem by results of this paper. We again simplify the von Kármán equation for elastic large deflection problem, and finally turn it into the nonlinear Schrödinger equation in this paper. Secondly, we expand the AKNS equation to still more symmetrical degree under many dimensional conditions in this paper. Owing to connection between the nonlinear Schrödinger equation and the integrability condition for the AKNS equation or the Dirac equation, we can obtain the exact solution for elastic large deflection problem by inverse scattering method. In other words, the elastic large deflection problem wholly becomes a quantum eigenvalues problem. The large deflection problem with orthorhombic anisotropy is also deduced in this paper.     

The application of Dirac matrices and Pauli matrices for the theory of plasticity

We are primarily concerned in this paper with the problem of plasticity. The solution of the problem of stress-increment for plasticity can be put into extremely compact form by famous Dirac matrices and Pauli matrices of quantum electrodynamics.     

Ge-Sb-Se硫系薄膜制备及光学特性研究

介绍了几种常见的硫系薄膜制备方法, 根据现有实验条件采用热蒸发法和磁控溅射法制备出Ge-Sb-Se三元体系硫系薄膜, 通过台阶仪测试薄膜的厚度和表面粗糙度, 计算出两种制备方法的成膜速率, 并通过X射线光电子能谱测试了两种制备方法所得薄膜与块体靶材组分的差别. 利用Z扫描技术和分光光度计测试了热蒸发法制备所得薄膜的三阶非线性性能和透过光谱, 计算出非线性折射率、非线性吸收系数和薄膜厚度等参数. 结果表明热蒸发法制备Ge-Sb-Se薄膜具有良好的物理结构和光学特性, 在集成光学器件方面很高的应用潜力.     

掺钼ZnO透明导电薄膜的太赫兹电磁波传输性质

采用直流磁控反应溅射方法,通过调节氧分压在玻璃基底上制备了不同载流子浓度的掺Mo的ZnO（ZMO）透明导电薄膜.应用太赫兹电磁波时域光谱技术研究了ZMO导电膜的太赫兹电磁波透射性质及介电响应,得到了与频率相关的电导率、能量吸收和薄膜折射率,实验结果与经典Drude模型相符很好.ZMO导电膜的太赫兹电磁波脉冲透射性质表明,通过调节ZMO薄膜的载流子浓度,该导电膜可作为应用于衬底和光学器件等太赫兹电磁波频率范围的宽带抗反射涂层. 关键词： 太赫兹电磁波光谱 薄膜电导率 宽带抗反射 透明导电薄膜     

THE SCHRÖDINGER EQUATION OF THIN SHELL THEORIES

This work is the continuation of the discussions of [50] and [51]. In this paper: (A) The Love-Kirchhoff equation of small deflection problem for elastic thin shell with constant curvature are classified as the same several solutions of Schrodinger equation, and we show clearly that its form in axisymmetric problem;(B) For example for the small deflection problem, we extract me general solution of the vibration problem of thin spherical shell with equal thickness by the force in central surface and axisymmetric external field, that this is distinct from ref. [50] in variable. Today the variable is a space-place, and is not time;(C) The von Kármán-Vlasov equation of large deflection problem for shallow shell are classified as the solutions of AKNS equations and in it the one-dimensional problem is classified as the solution of simple Schrodinger equation for eigenvalues problem, and we transform the large deflection of shallow shell from nonlinear problem into soluble linear problem.     

The effective charge effect in partially stripped ion-helium collisions

The double and single ionization cross section ratios of helium by partially stripped carbon, oxygen and fluorine ions are measured for projectile charge states ranging from +1 to +4 and impact energies from 1.5 MeV to 7.5 MeV. The effective charge effect in partially stripped ion-helium collisions is studied. It is found that the effective charge q_eff increases as the impinging energy increases and q _eff shows a modest dependence upon the projectile charge state in the present energy range. The projectile charge state, projectile energy, projectile and target electronic state dependences of the effective charge effect may be explained using orbital interpenetrating.