Synthesis of Al–Cr decagonal quasicrystal nanoparticles and their temperature of phase transformation to stable crystal phase

The synthesis of Al–Cr single quasicrystal (QC) nanoparticles of the decagonal phase was achieved by introducing an advanced gas flow evaporation method. By obtaining successive electron diffraction patterns for single-QC nanoparticles, the phase transformation temperature of a single-QC nanoparticle was determined to be 700 °C. It was also determined that part of the QC nanoparticle decomposed into hex-Al₈Cr₅ and Al during the phase transformation. Since the grain growth did not occur during the phase transformation in the present experiment, the inherent phase transformation temperature could be measured.     

Microstructure control of low-resistivity tin-doped indium oxide films grown by photoreaction of nanoparticles using a KrF excimer laser at room temperature

A tin-doped indium oxide (ITO) film on a SiO₂ substrate was prepared by photo-irradiation of spin-coated nanoparticles using a Xe excimer lamp and a KrF excimer laser. The effects of the excimer lamp and the excimer laser on the resistivity, mobility, and carrier concentration of the film were investigated. To better understand how to control the microstructure of the film, we investigated the effect of thickness on the resistivity of a film prepared by the two-step process, and found that the resistivity was higher in a thicker film. Using two-step irradiation plus one-step KrF irradiation in N₂ at room temperature, we produced an ITO film with lowest resistivity of any in this study. The electrical resistivity of this film was 5.94×10⁻⁴ Ω cm. On the other hand, when using a simple thermal process, the resistivity of a film sintered at 500°C in N₂ was 4.10×10⁻³ Ω cm. The differences in resistivity are discussed on the basis of the microstructure of the films using atomic force microscopy and Hall measurements.     

Ultrahigh-resolution laser spectroscopy of the S1B2u ← S0Ag transition of perylene

A rotationally resolved ultrahigh-resolution fluorescence excitation spectrum of the S₁ ← S₀ transition of perylene has been observed using a collimated supersonic jet technique in conjunction with a single-mode UV laser. We assigned 1568 rotational lines of the band, and accurately determined the rotational constants. The obtained value of inertial defect was positive, accordingly, the perylene molecule is considered to be planar with D_2h symmetry. We determined the geometrical structure in the S₀ state by ab initio theoretical calculation at the RHF/6-311+G(d,p) level, which yielded rotational constant values approximately identical to those obtained experimentally. Zeeman broadening of each rotational line with the external magnetic field was negligibly small, and the mixing with the triplet state was shown to be very small. This evidence indicates that intersystem crossing (ISC) in the S₁¹B_2u state is very slow. The rate of internal conversion (IC) is also inferred to be small because the fluorescence quantum yield is high. The rotational constants of the S₁¹B_2u state were very similar to those of the S₀¹A_g state. The slow internal conversion (IC) at the S₁ zero-vibrational level is attributed to a small structural change upon electronic transition.     

Efficient sum-frequency generation of continuous-wave single-frequency coherent light at 252 nm with dual wavelength enhancement

Highly efficient frequency conversions were conducted to obtain deep-ultraviolet single-mode coherent light by use of two-stage external cavities. A power of 154 mW at approximately 252 nm was obtained with a conversion efficiency of more than 8% by doubly resonant sum-frequency mixing of 373-nm light from the first-stage conversion and 780-nm light from a single-mode Ti:sapphire laser. The output performance of the deep-ultraviolet light source is sufficient for use in the laser cooling of neutral silicon atoms.     

Beam-polarization asymmetries for the p(gamma-->, K+)Lambda and p(gamma-->, K+)Sigma(0) reactions for E(gamma)=1.5-2.4 GeV

Beam polarization asymmetries for the p(gamma-->,K+)Lambda and p(gamma-->,K+)Sigma(0) reactions are measured for the first time for E(gamma)=1.5-2.4 GeV and 0.6相似文献   

Effect of visual target blurring on accommodation under distance viewing

Purpose

To examine the effect of visual target blurring on accommodation.

Methods

We evaluated the objective refraction values when the visual target (asterisk; 8°) was changed from the state without Gaussian blur (15 s) to the state with Gaussian blur adapted [0(without blur)?→?10, 0?→?50, 0?→?100: 15 s each].

Results

In Gaussian blur 10, when blurring of the target occurred, refraction value did not change significantly. In Gaussian blur 50 and 100, when blurring of the target occurred, the refraction value became significantly myopic.

Conclusion

Blurring of the distant visual target results in intervention of accommodation.

     

Free Field Construction for the ABF Models in Regime II

The Wakimoto construction for the quantum affine algebra U $_q$ ( $(\widehat{\mathfrak{s}\mathfrak{l}_2 })$ ) admits a reduction to the q-deformed parafermion algebras. We interpret the latter theory as a free field realization of the Andrews–Baxter–Forrester models in regime II. We give multi-particle form factors of some local operators on the lattice and compute their scaling limit, where the models are described by a massive field theory with $\mathbb{Z}$ $_k$ symmetric minimal scattering matrices.     

Rotational Spectra of XeH and Its Isotopic Species

Frequencies of rotational transitions of XeH⁺ and its isotopic species were measured in the 1–5 THz region with a highprecision far-infrared spectrometer using a tunable radiation source. Measured frequencies were analyzed together with previous microwave and infrared measurements to refine mass-independent Dunham parameters.     

Energy loss of 1000 keV electrons in thin silicon crystals as measured by high voltage electron microscopy

Abstract

Energy loss spectra of 1000 keV electrons transmitted by [111]-: riented thin silicon crystals were observed by an energy analyzer attached to the HVEM. The crystals were set to the systematic 220 Bragg reflection. Measurements were made for crystal thickness ranging from 1000 to 10,000 Å, which were determined by observations of pendellösung fringes.

Results were analyzed with Landau's transport equation, giving the : onclusion that the loss probability, which is the reciprocal of the mean free path, is 0.52 ± 0.02 × 10^?3 A^?1 for plasmon excitation and 1.50 ± 0.02 × 10^?3 A^?1 for L-electron excitation.