Resistivity control of sputtered amorphous-silicon by ion-implantation

The resistivity of a hydrogenated sputtered amorphous-silicon is controlled by using room temperature implantation of P⁺. It is found that the defects produced by implantation can be minimized by annealing at 300°C in an H₂ atmosphere, and also found that there is a threshold implanted dose, beyond which the resistivity begins to be controlled by changing the dose.     

The resonant secondary emission of the F center in alkali halides

The secondary radiation after resonant excitation of F center and its linear polarization P correlated to the polarization of resonant light have been measured for five alkali halides at low temperatures. In KC1, the spectrum of P over the whole Stokes region is divided into three successive regions, the depolarization range at the one-phonon Raman scattering, the near plateau range, and the depolarization range down to vanishing. The former two have common relevance to resonant energy and symmetries of coupled phonons. These relevances are interpreted adopting a configuration coordinate model for 2s- and 2p-like excited states.     

High pressure Raman study on the local structure of 1-ethyl-3-methylimidazolium tetrafluoroborate

We have investigated the pressure-induced Raman spectral changes of 1-ethyl-3-methylimidazolium tetrafluoroborate ([emim][BF₄]). We found that [emim][BF₄] did not crystallize up to 1.2 GPa. The Raman CH stretching spectra arising from the CH₃ groups of the ethyl-chain and the CH₃ group adjacent to the imidazolium-ring in [emim]⁺ cation largely changed against pressure. Moreover, the Raman intensity of the CH₂ (N) bending band arising from the alkyl-chain drastically changes with increasing pressure, but that of the imidazolium-ring in-plane bending band arising from the imidazolium-ring is independent of pressure. Our results show that the environment around the alkyl-chain of [emim][BF₄] is largely perturbed rather than that around the imidazolium-ring upon compression.     

Heat capacities of copper(II) formate tetrahydrate and tetradeuterate: A comparative study of phase transitions in layer hydrate crystals

The heat capacities of copper(II) formate tetrahydrate and tetradeuterate have been measured from 12 to 300 K with an adiabatic calorimeter. They have sigmoidal temperature dependence except near the antiferroelectric-paraelectric transition temperatures, 235.78 ± 0.05 K and 245.64 ± 0.05 K, respectively. The corresponding enthalpy changes are 836.0 ± 1.0 J mol^?1 and 936.9 ± 0.5 J mor^?1. The entropy changes are 3.546 ± 0.005 JK^?1mol^?1 and 3.814 ± 0.002 JK^?1 mol^?1. The heat capacities are larger in the high temperature phase than in the low temperature phase, the difference amounting to 5.74 JK^?1 mol^?1 and 7.15 JK^?1 mol^?1 for the hydrate and the deuterate, respectively. The heat capacity anomaly is compared with those in tin(II) chloride dihydrate and potassium hexacyanoferrate trihydrate and discussed in relation to the structure of the hydrogen bond networks in these substances. The discussion is extended to include possible properties of the hydrogen bond frameworks in ices I_h and II.     

Waveguide holograms: A new approach to hologram integration

A new class of holography is proposed, in which (1) the evanescent part of a guided wave, or (2) the guided wave in a thin-film hologram is utilized as the reference wave and/or the illuminating one. The hologram was designated as “wave-guide hologram” and has advantages in the possibility of integration, wide field of view, and compactness and high reliability of the reconstructing system. The possibility of the waveguide hologram has been proved through reconstruction experiments with a guided wave of a waveguide hologram recorded with a plane reference wave.     

Phase transition in ammonium hexafluorovanadate (III)

Heat capacity of ammonium hexafluorovanadate (NH₄)₃ [VF₆] has been measured with a miniaturized adiabatic calorimeter from 20 to 300 K. A phase transition was found at 280.44 ± 0.05 K with the associated entropy change Δ_trs S = 24.9 ± 0.5 JK^?1 mol^?1. The entropy transition is accounted for by the orientational order-disorder changes of hexafluorovanadate ion and ammonium ion occupying respective octahedral sites, as in the cases of (NH₄)₃AlF₆ and (NH₄)₃FeF₆ crystals. Changes in infrared spectra relative to v₃ vibrational mode of [VF₆]^3? ion can be explained by an orientational disorder of the anions in the high-temperature phase (HTP). The dependence of cubic root of the unit-cell volume of a family of ammonium cryolites on their transition temperatures is discussed in relation to the nature of interactions which induce the phase transition.     

InGaAsP/InP optical waveguide switch operated by a carrier-induced change in the refractive index

Waveguided semiconductor optical switches operated by a carrier-induced change in the refractive-index associated with the plasma dispersion are proposed. InGaAsP/InP four-port switches having two intersecting single-mode channel waveguides are fabricated by selective liquid-phase epitaxy and investigated at 1.5m wavelength. Optical switching is observed as a result of mode interference in the waveguide intersection region.     

Simultaneous observation of CO isotopomer absorption by broadband difference-frequency generation using a direct-bonded quasi-phase-matched LiNbO3 waveguide

Rovibration absorption lines both of 12CO and 13CO are observed simultaneously with the output of a 2 microm broadband difference frequency generated in a direct-bonded quasi-phase-matched LiNbO3 waveguide, which is a 50 mm device with a single quasi-phase-matching period that is operated at a constant temperature. The wavelength conversion efficiency and the difference-frequency generation bandwidth reach 100%/W and 100 nm, respectively. The idler output bandwidth in the 2 microm region is obtained by group-velocity matching or phase-mismatch minimization when a 0.94 microm pump laser diode and a 1.55 microm tunable signal source are used.     

Tensor optimized antisymmetrized molecular dynamics for relativistic nuclear matter

We apply a newly developed many-body theory, tensor optimized antisymmetrized molecular dynamics (TOAMD), to nuclear matter using a relativistic bare nucleon-nucleon interaction in the relativistic framework. It becomes evident that the tensor interaction plays an important role in nuclear many-body system due to the role of the pion in a strongly interacting system. We take the relativistic nuclear matter (RNM) wave function as a basic state and add tensor and short-range correlation operators in the form of pion and omega-meson correlation functions acting on the RNM wave function using the concept of TOAMD. We use the Monte Carlo (Metropolis) method based on the Gaussian integration and the second quantization method for antisymmetrization to calculate all the matrix elements of the many-body Hamiltonian. We write the whole formula of the TOAMD method for numerical calculations of the nuclear binding and saturation properties of nuclear matter using one-boson exchange potential.     

自然循环回路内芯片的强化沸腾换热研究

针对电子器件的高效冷却问题,对自然循环回路系统内表面加工有方柱形微结构的硅片上FC-72的强化沸腾换热性能进行了实验研究.测试了两个芯片,其表面上的方柱形微结构的边长均为30μm,但高度分别为60 μm和200 μm.沸腾介质的过冷度设为10 K、25 K和35 K.随着壁面过热度的增加,微结构表面芯片上的热流密度急剧增加且临界热流密度时芯片的表面温度低于芯片回路正常工作的临界上限温度85℃,这与其在池沸腾换热中的特点一样.但临界热流密度值与池沸腾情况相比有所降低.