分布式喇曼光纤放大器在光传输系统中的应用

就分布式喇曼光纤放大器独特的低噪声和灵活的功率调整性质进行了分析，并就它在系统中的应用作了简单的介绍。     

Interaction of light filaments in air

This paper analytically investigates the interaction of light filaments generated by a femtosecond laser beam in air. It obtains the Hamiltonian of a total laser field and interaction force between two filaments with different phase shifts and crossing angles. The property of the interaction force, which leads the attraction or repulsion of filaments, is basically dependent on the phase shift between filaments. The crossing angle between two filaments can only determine the magnitude of the interaction force, but does not change the property of the force.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

制冷剂过热气体热力性质的隐式拟合方法

准确、快速、稳定地计算制冷剂热力性质是计算机辅助设计和工程计算的要求。本文将 隐式拟合方法与Ｍａｒｔｉｎ－Ｈｏｕ方程相结合,提出制冷剂过热气体热力性质的隐式拟合方法,该方法 不仅具有形式统一、精度高、速度快、外推性和稳定性好的优点,而且保证了过热区与两相区之间 热力性质的连续性。     

近红外光谱技术在鱼糜等级评定中的应用研究

利用近红外光谱技术,对冷冻和解冻状态的不同等级白姑鱼糜进行等级评定。采用一阶导数法和标准正态变量变换法进行光谱预处理,再对预处理后的数据进行主成分分析,以主成分分析-马氏距离模式识别方法建立不同等级白姑鱼糜的等级评定模型,并对7项理化指标(水分、蛋白质、粗脂肪、盐溶性蛋白、凝胶强度、持水率和白度值)进行了测定。结果表明,主成分分析可以将三个等级白姑鱼糜较好地区分开;冷冻状态白姑鱼糜建立的等级评定模型效果优于解冻状态白姑鱼糜,前者的综合预测正确率为96.3%,后者的综合预测正确率为83.3%;三个等级白姑鱼糜的理化指标存在一定的差异。研究表明,近红外光谱技术可以快速无损评定白姑鱼糜等级。     

氢吸附导致的SiC表面金属化

文章报道了最近对氢吸附导致β-SiC（001）-32表面金属化的研究结果.提出了β-SiC（001）-32表面金属化的一种新机制：通过形成氢桥键（Si-H-Si 复合结构）形成表面n型掺杂.该复合结构通过氢桥键增强了沟槽底部的弱结合的Si-Si二聚体,并向体系的导带提供电子.     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

功率MOSFET的负偏置温度不稳定性效应中的平衡现象

通过对功率金属氧化物半导体场效应晶体管在静态应力下的负偏置温度不稳定性的实验研究, 发现器件参数的退化随时间的关系遵循反应扩散模型所描述的幂函数关系, 并且在不同栅压应力下, 实验结果中均可观察到平台阶段的出现. 基于反应扩散理论的模型进行了仿真研究, 通过仿真结果分析和验证了此平台阶段对应于反应平衡阶段, 并且解释了栅压应力导致平台阶段持续时间不同的原因. 关键词： 功率金属氧化物半导体场效应晶体管 负偏置温度不稳定性 反应扩散模型     

A relativistic density functional study of gaseous uranium tetrahalides

The molecular structures and vibrational frequencies of gaseous UX₄ (X = F, Cl, Br and I) molecules have been investigated using generalized gradient approximation (GGA) functions (BP, BLYP, PBE and RPBE) with triple-zeta polarized (TZP) basis set. Scalar relativistic effects are introduced via the zeroth-order regular approximation (ZORA) approach to the Dirac equation in the present study. Of the methods examined here the RPBE has the best performance in terms of the errors compared with experiment and reference for the vibrational frequencies. The bond dissociation energies (BDE) for U–X bonds in the UX₄ were obtained using the RPBE method, and are in good agreement with experimental values. In addition, satisfactory calculated entropies of UX₄ have also been obtained at temperatures ranging from 600 to 1200 K in 50 steps using the same method.