A Lower Bound for {a+b:aA, bB, and P(a,b)≠0}

Let A and B be two finite subsets of a field . In this paper, we provide a non-trivial lower bound for {a+b:aA, bB, and P(a,b)≠0} where P(x,y) [x,y].     

基于优化探测窗口的光斑质心探测方法

哈特曼-夏克波前传感器进行波前探测时，用子孔径光斑强度的一阶矩来计算光斑质心位置，子孔径窗口作为探测窗口，但探测时子孔径窗口内噪声对一阶矩有很大的影响，会使质心探测精度产生很大的误差。因此在计算质心位置时探测窗口的选取对探测精度有重要影响，必须选取合适的探测窗口来提高光斑质心探测精度。为此，在传统算法的基础上提出优化探测窗口的方法来提高质心探测精度,仿真和实验结果表明新方法提高了质心探测的精度，未经处理的高噪声恢复波前的波前残差峰谷值是2.851 4λ，均方根值是0.606 3λ，优化探测窗口后波前残差的峰谷值是1.636 2 λ，均方根值是0.367 1 λ，重构误差减小了40％。证明了算法的可行性和稳定性。     

水雾化制备Fe74Al4Sn2P10C2B4Si4非晶合金粉末及其磁粉芯性能研究

采用水雾化方法制备Fe7Al4Sn2P10C2B4Si4合金粉末,研究发现该合金具有强的非晶形成能力和高热稳定性,在粉末粒度小于400目时可以形成非晶态合金.采用该非晶粉末制备的磁粉芯在高频下品质因数显著高于MPP粉芯,说明该磁粉芯高频损耗较低.分析表明,非晶合金磁粉芯高频下损耗低的主要原因是电阻率较高.     

无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

一种基于Meta分析固定效应模型的简明统计学方法

为了让临床医生更方便地使用M eta分析方法,我们根据四格表数据特点,提出了一种基于固定效应模型的简明方法。该方法简单而容易操作,且统计结果与原方法完全等价,在循证医学领域很有推广价值。     

生长温度对磁控溅射ZnO薄膜的结晶特性和光学性能的影响

采用反应射频磁控溅射方法，在Si (100) 基片上制备了具有高c轴择优取向的ZnO薄膜.利用 原子力显微镜、透射电子显微镜、X射线衍射分析、拉曼光谱等表征技术，研究了沉积温度 对ZnO薄膜的表面形貌、晶粒尺度、应力状态等结晶性能的影响；通过沉积温度对透射光谱 和光致荧光光谱的影响，探讨了ZnO薄膜的结晶特性与光学性能之间的关系.研究结果显示， 在室温至500℃的范围内，ZnO薄膜的晶粒尺寸随沉积温度的增加而增加，在沉积温度为500 ℃时达到最大；当沉积温度为750℃时，ZnO薄膜的晶粒尺度有所减小；在室温至750℃的范 围内，薄膜中ZnO晶粒与Si基体之间均存在着相对固定的外延关系；在沉积温度低于500℃时 ，制备的ZnO薄膜处于压应变状态，而750℃时沉积的薄膜表现为张应变状态.沉积温度的不 同导致ZnO薄膜的折射率、消光系数、光学禁带宽度以及光致荧光特性的变化，沉积温度对 紫外光致荧光特性起着决定性的作用.此外，探讨了影响薄膜近紫外光致荧光发射的可能因 素. 关键词： ZnO薄膜 表面形貌 微观结构 光学常数     

BEPCⅡ高频发射机和环流器的调整和测试

北京正负电子对撞机升级改造工程(BEPCⅡ)将采用的频率500MHz、输出功率250kW的高频发射机和环流器已安装、调整、测试和验收完毕,这是国内建立的第一套500MHz/250kW发射机系统.本文将详细介绍机器的调测试的原理和各项测量内容及结果, 并比较设计指标和要求,来阐述此发射机的实际技术指标和测试性能.     

Demonstration of Soliton Solutions of DNLS Equation by Liouville Theorem

In the inverse scattering transform (IST), the reflectionless Jost solutions are combined by their analytic properties in the complex spectrum parameter plane, and then can be shown to satisfy the two Lax equations indeed by Liouville theorem. So the corresponding soliton solutions certainly satisfy the nonlinear equation by compatibility condition. Especially the multi-soliton solutions of DNLS equation can be demonstrated in this way. PACS Numbers: 05.45.Yv, 02.30.-f, 11.10.Ef     

Surface free energy of CrNx films deposited using closed field unbalanced magnetron sputtering

CrN_x thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrN_x films at temperatures in the range 20-170 °C. In this study CrN_x thin films with CrN, Cr(N), Cr₂N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr⁺² emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 °C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrN_x films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrN_x film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 °C. This is lower than that of Cr(N), Cr₂N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrN_x films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness.