Spectral Properties and Solubilization Location of 2'-Ethylhexyl 4-(N,N-Dimethylamino)benzoate in Micelles

在阳离子、非离子和阴离子表面活性剂胶束溶液中,研究了4-(N,N-二甲氨基)苯甲酸2'-乙基己基酯(EHDMAB)的双重荧光和紫外吸收．当EHDMAB增溶在不同的胶束溶液中,紫外吸收增强,在离子型胶束溶液中,可观察到具有较长波长的EHDMAB分子内扭转电荷转移(TICT)荧光,相反,在非离子型胶束溶液中,可观察到具有较短波长TICT荧光,特别是位于阳离子胶束Stern层中的吡啶阳离子可强烈猝灭EHDMAB分子的双重荧光,所吸收的紫外辐射主要通过TICT荧光和非辐射去活化衰减．按照EHDMAB分子TICT荧光在有机溶剂中的极性依赖性,EHDMAB分子的4-(N,N-二甲氨基)在离子型胶束和非离子型胶束中处于不同的极性环境;根据EHDMAB和表面活性剂分子的结构和大小分析,EHDMAB分子的4-(N,N-二甲氨基)应朝向胶束的极性头基团,而2'-乙基己基链则朝向疏水性的胶束内核．动态荧光猝灭测量为EHDMAB分子在不同胶束中的位置进一步提供了佐证．     

Study on the electronic structure and optical properties of different Al constituent Ga1−xAlxAs

Using quantum mechanics GASTEP software package based on the first principle density function theory, the electronic structure and optical properties of Ga_1−xAl_xAs at different Al constituent are calculated. Result shows that with the increase of Al constituent, the band gap of Ga_1−xAl_xAs increases and varies from direct band gap to indirect band gap; the absorption band edge and the absorption peak move to high-energy side; the static reflectivity decreases. With the increasing of the incident photon energy, Ga_1−xAl_xAs shows metal reflective properties in certain energy range. With the increasing of Al constituent, static dielectric constant decreases and the intersection of dielectric function and the x-axis move towards high-energy side; the peak of energy loss function move to low-energy side and the peak value reduces.     

为什么水在金属表面的吸附构型是倾斜的——水在铜、铝表面吸附的量子化学计算

用量子化学从头算方法,分别以原子簇Ｃｕ５、Ａｌ４、Ａｌ１０模拟Ｃｕ（１００）和Ａｌ（１１１）表面,在不同基组水平上,计算了水在两种金属表面上倾斜吸附的热能面,结果表明：当计算基组中不含氧原子的ｄ轨道时,得到水分子在金属垂直吸附的构型,这与实验结果不符;当水中氧原子加极化函数时,水分子倾斜吸附时能量较低,得到与实验相符的吸附构型。这说明水中氧原子ｄ轨道在计算中起着关键作用,在成键过程中有着重要影响。     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

制冷剂过热气体热力性质的隐式拟合方法

准确、快速、稳定地计算制冷剂热力性质是计算机辅助设计和工程计算的要求。本文将 隐式拟合方法与Ｍａｒｔｉｎ－Ｈｏｕ方程相结合,提出制冷剂过热气体热力性质的隐式拟合方法,该方法 不仅具有形式统一、精度高、速度快、外推性和稳定性好的优点,而且保证了过热区与两相区之间 热力性质的连续性。     

近红外光谱技术在鱼糜等级评定中的应用研究

利用近红外光谱技术,对冷冻和解冻状态的不同等级白姑鱼糜进行等级评定。采用一阶导数法和标准正态变量变换法进行光谱预处理,再对预处理后的数据进行主成分分析,以主成分分析-马氏距离模式识别方法建立不同等级白姑鱼糜的等级评定模型,并对7项理化指标(水分、蛋白质、粗脂肪、盐溶性蛋白、凝胶强度、持水率和白度值)进行了测定。结果表明,主成分分析可以将三个等级白姑鱼糜较好地区分开;冷冻状态白姑鱼糜建立的等级评定模型效果优于解冻状态白姑鱼糜,前者的综合预测正确率为96.3%,后者的综合预测正确率为83.3%;三个等级白姑鱼糜的理化指标存在一定的差异。研究表明,近红外光谱技术可以快速无损评定白姑鱼糜等级。     

氢吸附导致的SiC表面金属化

文章报道了最近对氢吸附导致β-SiC（001）-32表面金属化的研究结果.提出了β-SiC（001）-32表面金属化的一种新机制：通过形成氢桥键（Si-H-Si 复合结构）形成表面n型掺杂.该复合结构通过氢桥键增强了沟槽底部的弱结合的Si-Si二聚体,并向体系的导带提供电子.     

Influence of cesium on the stability of a GaAs photocathode

The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature.We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current,and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode.We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode.Our results support the double dipolar model for the explanation of the negative electron affinity effect.     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

功率MOSFET的负偏置温度不稳定性效应中的平衡现象

通过对功率金属氧化物半导体场效应晶体管在静态应力下的负偏置温度不稳定性的实验研究, 发现器件参数的退化随时间的关系遵循反应扩散模型所描述的幂函数关系, 并且在不同栅压应力下, 实验结果中均可观察到平台阶段的出现. 基于反应扩散理论的模型进行了仿真研究, 通过仿真结果分析和验证了此平台阶段对应于反应平衡阶段, 并且解释了栅压应力导致平台阶段持续时间不同的原因. 关键词： 功率金属氧化物半导体场效应晶体管 负偏置温度不稳定性 反应扩散模型