Effect of electron irradiation on the crystalline structure of hgte and hgl-xcdxte thin films

The influence of 8 MeV electrons on the crystalline structure of HgTe and Hg1-xCdxTe thin films was studied. HgTe and Hg1-xCdxTe layers were obtained by thermal evaporation and condensation in vacuum on optically flat silica glass substrates heated at different temperatures.

One finds that the results of irradiation of HgTe and Hg_1-xCd_xTe thin films with 8 MeV electrons depend on the preparation conditions of the samples, and therefore on the level of perfection of the crystalline structure and the quantity of nonstoichiometric atoms.     

Spectrophotometric Determination of Pyrithioxin in Pharmaceutical Preparations

Rapid direct and induced difference spectrophotometric methods for determination of pyrithioxin in single dosage forms (tablets and syrups) are reported. The direct methods depend upon measurement of the absorbance of pyrithioxin in different media at λ_max i-e at 296 nm in 0.1 M hydrochloric acid, at 328 nm in citric acid-phosphate buffer of pH 7 and at 314 nm in 0.1 M sodium hydroxide. The mean percentage recovery of the authentic samples were 100.55±0.43, 101.21±0.58 and 100.29±0.64 respectively (P=0.05). The absorbance difference methods are based upon either measurement of the difference between the acid and the alkaline solutions i-e. Δ A (Alk-Acid) at 318 nm with an accuracy of 100.72±0.88 or the absorbance difference between the acid and neutral solutions i-e Δ A (pH 7-acid) at 328 nm with an accuracy of 100.31±0.68.     

Two stage electrostatic separator for the recycling of plastics from waste electrical and electronic equipment

The aim of study was to evaluate the effectiveness of a new facility for recycling of plastics from granular waste electrical and electronic equipment. The installation consists of two sections, the products of a first tribo-aero-electrostatic separator being subsequently treated in two free-fall electrostatic separators. The tests were performed on a mixture of polycarbonate (PC) and polyamide (PA). Analysis of the purity of the products obtained was performed using a program of image processing in MATLAB. Products of very high purity (roughly 95% for both PC and PA) were obtained at a recovery rate higher than 70%.     

Theoretical analysis of the radiation effect on the transient behavior of optoelectronic integrated devices

Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise time of this device before radiation are investigated based on the frequency response of the constituent devices and the optical feedback inside the device. Second, the effect of neutron irradiation flux on the transient behavior of this device is theoretically studied. The results show that, by increasing the optical feedback inside the device, the rise time in the amplification mode is increased along with an increasing output, while that in the switching mode can be reduced effectively, and the neutron irradiation reduces the transient response and the rise time in both the amplification and switching modes. This type of model can be exploited as optical amplifier, optical switching device, and other applications.     

Influence of gamma radiation on morphology structure,electrochemical corrosion behavior and hardness of Ni–Cr based alloys

This study evaluates the effects of gamma radiation on structure, electrochemical corrosion behavior and Vickers hardness of commercial dental Nikkeli–Kromi–Polttosekoitus [Ni_65.2Cr_22.5Mo_9.5X_2.8 (X=Nb, Si, Fe and Mn)] alloy. The corrosion rate of Ni_65.2Cr_22.5Mo_9.5X_2.8 (X=Nb, Si, Fe and Mn) alloy with 0.5 M HCl is increased with increasing the exposure rate of gamma radiation. The corrosion resistance of Ni_65.2Cr_22.5Mo_9.5X_2.8 (X=Nb, Si, Fe and Mn) is varied and reaches a minimum value at 30 KGy. The corrosion potential value also is varied and reaches its highest value at 30 KGy. The Vickers hardness value of Ni_65.2Cr_22.5Mo_9.5X_2.8 (X=Nb, Si, Fe and Mn) alloy is decreased by increasing the gamma radiation dose. Also it is obvious from our results that the effects of gamma radiation at the surface are much higher as compared with deeper parts and the structure of the alloy is changed due to its exposure to gamma radiation.     

基于Web的图书馆管理系统访问控制策略

针对基于Web的图书馆管理系统资源访问控制的动态性问题，提出了一种基于角色的访问控制策略描述方案．通过对基于Web的图书馆管理系统访问控制管理影响因素和访问控制需求的分析，结合NIST基于角色的访问控制统一模型标准，构造了一种基于角色的访问控制元模型．并在这一元模型的基础上，提出了一种紧凑的基于角色的访问控制XML策略描述语言框架．结果表明该访问控制策略描述语言框架适合表述动态环境下对图书馆资源的访问策略，提高了基于Web的图书馆管理系统资源访问的安全性．     

Transient creep during transformation in Cd-Zn alloys

Transient creep of Cd-2 wt. % Zn and Cd-17·4 wt. % Zn alloys has been studied under different constant stresses ranging from 6·4 MPa to 12·7 MPa near the transformation temperature. The results of both compositions showed two transient deformation regions, the low temperature region (below 483 K) and the high temperature region (above 483 K). From the transient creep described by the equation _tr=Bt ⁿ, where _tr andt are the transient creep strain and time. The parametersB andn were calculated. The parameterB was found to change with the applied stress from 0·3×10^–4 to 3×10^–4 and from 0·6×10^–4 to 18×10^–4 for Cd-2 wt. % Zn and Cd-17·4 wt. % Zn, respectively. The exponentn was found to change from 0·8 to 0·95 for both alloys. The parameterB was related to the steady state creep rate through the equation , the exponent was found to be 0·5 for Cd-2 wt. % Zn and 0·6 for the eutectic composition. The activation energies of transient creep in the vicinity of the transformation regions (above 483 K) were found to be 50·2 kJ/mole for Cd-2 wt. % Zn and 104·7 kJ/mole for the eutectic composition characterizing the mechanisms of grain boundary diffusion and volume diffusion in Cd, respectively.     

SIMPLE TECHNIQUES FOR DETERMINING THE SMALL-SIGNAL EQUIVALENT CIRCUIT OF MESFET’s

Simple techniques for determining the broadband small signal equivalent circuit (SSEC) of MESFETs are presented in this paper. The intrinsic elements are calculated using two-dimensional method from the Y parameters, which are obtained from the Fourier analysis of the device transient response to voltage-step perturbations at the drain and gate electrodes. Whereas, the parasitic external elements are determined by simple approximations used in transmission line modeling. In addition, a new technique is also proposed to determine the source and drain series resistances. A comparison of the SSEC of three different MESFETs technologies shows that the MESFETs on GaN and 4H-SiC are suitable for high power applications. The method used to determine the intrinsic elements is validated with simulated data obtained by Monte Carlo method.     

Synthesis,structural and dielectric properties of SrBi<Subscript>2 – <Emphasis Type="Italic">x</Emphasis></Subscript>Sm<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript>

The SrBi_{2 – x} Sm _x Nb₂O₉ (x = 0, 0.4, 0.5) structure were synthesized by a conventional solid-state method. The X-ray diffraction shows an orthorhombic at room temperature. Dielectric constant, loss tangent and Ac conductivity of Sm-doped SrBi₂Nb₂O₉ were carried out, as well. A higher concentration of samarium (x = 0.4 and 0.5) doping leads to a significant reduction in dielectric constant and in Curie temperature. Rather relaxor type of behaviour took place.