Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation

The effect of 2.0 MeV Cu⁺ irradiation on Si(100) crystal has been studied by the Rutherford backscattering/channeling technique. Analysis of the lattice disorder distribution has been performed under 100 direction of tilting off from the target normal: 7°, 30°, and 45° as well as different doses. The lattice disorder distributions in Si(100) have been compared with TRIM'89 simulation. The results show that the lattice disorder distributions in Si(100) under different irradiation angles seem to be in good agreement with TRIM'89 simulation. When the dose increases up to 8.7×10¹⁴ ions/cm², the defect concentration increases leading to the formation of an amorphous layer.     

Oscillations of certain second order nonlinear differential equations

A second order nonlinear differential equation

Inclusion of ferrous phenanthroline in molybdenum disulfide

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基于三维静电势参数研究C60溶解性的构效关系

在量子化学从头算基础上,对一系列溶剂化合物分子进行了结构优化和三维静电势参数计算,运用多元线性回归分析和神经网络方法对C60在121种不同溶剂的溶解性与计算的结构参数进行了构效关系研究.用建立起来的QSPR 关系式对15种不同结构类型溶剂进行了预测,并阐述了C60溶质与不同溶剂之间的相互作用,获得了满意的结果.