Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.     

Characterization and Thermal Behaviour of Garnets from Almandine–Pyrope Series at 1200°C

Hyperfine Interactions - The natural garnets from almandine (Fe3Al2Si3O12)–pyrope (Mg3Al2Si3O12) series with the iron to magnesium atomic ratio ranging from 0.2 to 1 were characterised and...     

Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Undoped AlGaN/GaN heterostructures with different content and thickness of AlGaN layer are investigated by photoreflectance (PR) spectroscopy. We have observed PR resonances related to an absorption in both GaN and AlGaN layers. The character of these resonances has been analyzed, and PR lines associated with excitonic and band-to-band absorption in the GaN layer and band-to-band absorption in the AlGaN layer have been identified. The transition related to band-to-band absorption possesses characteristic Franz–Keldysh oscillations (FKOs) associated with a built-in electric field. The electric field in the AlGaN layer obtained on the basis of the analysis of FKOs has been found to be in the range of 244–341 kV/cm. The value of the field has been found to decrease with the increase in AlGaN thickness and to increase with the increase in Al concentration. The surface potential for AlGaN layers has been found to increase with the increase in Al mole fraction and has been estimated to be in the range of 1.0–1.7 eV.     

What is a design? How should we classify them?

Design theory crosses the boundary between mathematics and statistics, and includes a wide range of disparate types of design. In this paper we present a classification scheme which aims to include as many important types as possible, based on a balance among concept, representation and use.     

Temperature jump induction of isomerization dynamics of alkali halide clusters

The time resolved dynamics of diffusionless cube → ring isomerization of the Na₄Cl₄ cluster was interrogated by constant energy molecular dynamics simulations, utilizing the first passage time method. The nonreactive isomerization induced by nonselective vibrational excitation is well accounted for in terms of the statistical RRK theory, opening avenues for experimental exploration of time-resolved cluster isomerization dynamics.     

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 10⁶–10⁸ cm^?2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 10⁶–10⁸ cm^?2. It is also found that some deep electron and hole traps are related to dislocations.     

Characterization of Metallo Bis(terpyridine) Diblock Polymers by Nonaqueous Capillary Zone Electrophoresis

A method of nonaqueous capillary zone electrophoresis (CZE) has been developed to characterize block (co)polymers of poly(ethylene oxide) and poly(styrene) containing metallo bis(terpyridine) complexes as bridging units. Specific CZE separation conditions had to be applied, with barium perchlorate dissolved in N-methylformamide (NMF) as background electrolyte and OV-1701-OH deactivated capillaries. For detection UV absorption was measured at a wavelength of 316 nm. Metallo diblock polymers with molecular weights up to 30,000 Da could be analyzed by the proposed nonaqueous CZE method. Experiments performed with polymeric compounds containing Fe, Ni or Ru as central metal ions showed that their electrophoretic mobilities were independent of the type of metal ion. Therefore, the data on the size of the polymeric compounds could be obtained using just one set of calibration standards. Polydispersities of the samples calculated from the experimental results were in correlation with the polydispersities of the polymers used in the synthesis of the metallo diblock polymers. Several polymeric samples contained metallo mono(terpyridine) complexes as impurities. These by-products could be separated from the main product. With symmetrical diblock polymers only one by-product was detected, while with an asymmetric diblock polymer two types of mono-complexes were found. The amount of the mono-complexes present as impurities was dependent on the type of central metal ion (Ni > Fe >> Ru).     

Investigations of backscattering peaks and of the nature of the confining potential in open quantum dots

The properties of open quantum dots are examined in magneto-transport. The quantum dots are prepared from a two-dimensional electron system (2DES) in AlGaAs/GaAs by lateral gate structures. These quantum dots are open, i.e. they are still connected to the surrounding 2DES regions. The low magnetic field magnetoresistance shows peak structures. These structures can be related to semi-classical ballistic trajectories in the confining potential of a dot. The calculations of different confining potentials (abrupt “hard-wall” and parabolic “soft-wall”) are compared with the experimental results. The experiments are better described by a soft-wall potential.