Structural optimization design for large mirror

The system design must be started from the concept with low cost and high performance. In this point, the topological shape of the structure is very important in the view of the structural rigidities and light-weight design.In this paper, the optimization methodology is presented in the design stage of the large optical mirror. We obtain the optimal layout through the topology optimization and then design the details through the size or shape optimization for structural rigidity.     

Statistical Analysis of the Effect of Mineral Admixtures on the Strength of the Interfacial Transition Zone

Microscopic evidence indicates that the thickness of the interfacial transition zone (ITZ) between the aggregate and the cement paste is modified when mineral admixtures partially replace portland cement. Unfortunately, there is limited information on the significance of these microscopic modifications to the mechanical properties of the ITZ. This research reports experimental results on the shear and tensile strength of the ITZ as affected by the addition of the following mineral admixtures: silica fume, fly ash, and natural pozzolan. Statistical analysis was used to identify the significant parameters affecting the tensile and shear strength of the ITZ. Experimental results indicate that not only does the incorporation of silica fume and fly ash increase the strength of the ITZ, these mineral admixtures have a greater influence on the strength increase of the ITZ than in the strength increase of the cement paste.     

Steepest Descent, CG, and Iterative Regularization of Ill-Posed Problems

The state of the art iterative method for solving large linear systems is the conjugate gradient (CG) algorithm. Theoretical convergence analysis suggests that CG converges more rapidly than steepest descent. This paper argues that steepest descent may be an attractive alternative to CG when solving linear systems arising from the discretization of ill-posed problems. Specifically, it is shown that, for ill-posed problems, steepest descent has a more stable convergence behavior than CG, which may be explained by the fact that the filter factors for steepest descent behave much less erratically than those for CG. Moreover, it is shown that, with proper preconditioning, the convergence rate of steepest descent is competitive with that of CG.This revised version was published online in October 2005 with corrections to the Cover Date.     

Comparative studies of femtosecond to microsecond laser pulses on selective pigmented cell injury in skin

Threshold radiant exposures for grossly apparent immediate whitening and ultrastructural alterations of melanosomes in black guinea pig skin were determined for a series of red visible laser pulses ranging from 4 x 10(-4) to 6.5 x 10(-14) s. Threshold exposures for melanosomal injury were found to be independent of pulsewidth when the pulsewidths were below the estimated thermal relaxation time of melanosomes. Threshold radiant exposures for melanosomal injury were found to increase when the pulsewidths were approximately equal to or above the thermal relaxation time of melanosomes. At longer pulse durations, fracturing of melanosomes was not observed despite the longer exposures necessary for injury. Instead, perimelanosomal vacuoles were noted. These findings are consistent with the theory of selective photothermolysis and provide evidence for the thermal initiation of melanosomal disruption.     

Two-dimensional autocorrelation function analysis of smoked foil patterns

Digital image processing techniques have been applied to the analysis of cellular smoked foil patterns from gaseous detonations. In particular, the two-dimensional autocorrelation function is applied to digital cell pattern images and an orientational correlation parameter is calculated. Taking line profiles along the directions of highest correlation provides an unbiased method of determining the mean cell size in each of the two principal directions. By analyzing the width, amplitude and angular position of the orientational correlation plots, information can be extracted concerning the cellular pattern regularity, the relative angular correlation between two sets of transverse waves in two directions, and the mean shape or elongation of the cells within the pattern. The technique is applied to smoked foils from oxyacetylene mixtures with argon dilutions ranging from 0 to 75% to quantify the increase in regularity with argon dilution. This method provides a simple and useful way of analyzing cellular patterns and constitutes a promising technique for improving smoked foil diagnostics.     

Romanovski polynomials in selected physics problems

We briefly review the five possible real polynomial solutions of hypergeometric differential equations. Three of them are the well known classical orthogonal polynomials, but the other two are different with respect to their orthogonality properties. We then focus on the family of polynomials which exhibits a finite orthogonality. This family, to be referred to as the Romanovski polynomials, is required in exact solutions of several physics problems ranging from quantum mechanics and quark physics to random matrix theory. It appears timely to draw attention to it by the present study. Our survey also includes several new observations on the orthogonality properties of the Romanovski polynomials and new developments from their Rodrigues formula.     

Modules of piecewise polynomials and their freeness

Partially supported by NSF Grant DMS-9004123 and ARO through MSI Cornell (DAAG 29-85-C-0018)     

An optical bridge reflectometer for sensitive measurement of ion implantation dose

An instrument is described that can be used to monitor, with unprecedented sensitivity, changes in the optical reflectivity due to crystailine damage incurred during ion implantation. It is shown that at the shot-noise limit, changes in the optical reflectivity of silicon as small as 5·10^–7 can be measured in a 10 Hz bandwidth with a signal-to-noise ratio of 100, corresponding to an extrapolated uniform implantation dose of 5·10⁸ cm^–2 for ¹¹B⁺ at 50 keV in silicon.