On the sigma-model structure of type IIA supergravity action in doubled field approach

In this letter, we describe how to string together the doubled field approach by Cremmer, Julia, Lü, and Pope with the Pasti-Sorokin-Tonin technique to construct the sigma-model-like action for type IIA supergravity. The relation of the results with those obtained in the context of searching for superstring/M-theory hidden symmetry group is discussed.     

A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption

We have demonstrated a passively Q-switched operation of Nd:GdVO₄ laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.     

Synthesis of β-phenyl-δ,ε-unsaturated amino acids and stereoselective introduction of side chain groups into [4,3,0]-bicyclic β-turn dipeptides

(2S,3S)- and (2R,3R)-2-amino-3-phenyl-5-hexenoic acids have been synthesized in large scale by using Ni(II)-complexes as a template. The amino acids were used in the synthesis of [4,3,0]-bicyclic β-turn mimetics by a convergent methodology. The unique advantage of this strategy is the convenience of introducing side chain groups with predetermined chiralities on both the five- and six-membered heterocyclic rings.     

Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime

Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (V_InH₄)⁺ to (V_InH₄)⁰. This phenomenon was more obvious in P-rich samples that have a higher concentration of V_InH₄. The transformation temperature of approximately 120 K suggests that the complex V_InH₄ is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral V_InH₄ accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP.     

Doppler cooling a single Ca+ ion with a violet extended-cavity diode laser

We present a scheme for employing a violet extended-cavity diode laser in experiments with single, trapped ions. For this the grating-stabilised laser is spatially and spectrally filtered and referenced to a Fabry–Pérot cavity. We measure an upper limit to the line width by observing a 305-kHz FWHM beat note with the second harmonic of a titanium sapphire laser. The laser is subsequently used to optically cool a single ⁴⁰Ca⁺ ion close to the Doppler limit. PACS 03.67.Lx; 32.80.Pj; 42.55.Px     

Vibration analysis of planar serial-frame structures

A hybrid analytical/numerical method is proposed that permits the efficient dynamic analysis of planar serial-frame structures. The method utilizes a numerical implementation of a transfer matrix solution to the equation of motion. By analyzing the transverse and longitudinal motions of each segment simultaneously and considering the compatibility requirements across each frame angle, the undetermined variables of the entire frame structure system can be reduced to six which can be determined by application of the boundary conditions. The main feature of this method is to decrease the dimensions of the matrix involved in the finite element methods and certain other analytical methods.     

Optical spectroscopy of single InAs/InP quantum dots around λ=1.55 μm

We discuss the preparation and spectroscopic characterisation of a single InAs/InP quantum dot suitable for long-distance quantum key distribution applications around λ=1.55 μm. The dot is prepared using a site-selective growth technique which allows a single dot to be deposited in isolation at a controlled spatial location. Micro-photoluminescence measurements as a function of exciton occupation are used to determine the electronic structure of the dot. Biexciton emission, shell filling and many-body re-normalization effects are observed for the first time in single InAs/InP quantum dots.     

Ultrafast carrier dynamics in ferromagnetic InGaMnAs

We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons.     

Enhancement of the Kerr effect for a quantum dot in a cavity

Nonlinear susceptibility of a quantum dot (QD) embedded in a two-sided cavity, is studied theoretically from a weak-coupling to a strong-coupling regime. In the relevance of a quantum logic gate, the corresponding nonlinear phase shifts (Kerr effect) are estimated for coherent wavepackets including one photon on average. In the weak-coupling regime, the phase shift enhances strongly as a function of a coupling constant between the cavity photon and QD, and eventually saturates in the strong-coupling regime. We also show transmission spectra to evaluate the efficiency of the phase shift. Although the efficiency decreases monotonically in the weak-coupling regime, it rises in the strong-coupling regime.