R值测量中强子事例选择的改进

强子事例的选择和强子探测效率是在BEPC/BES上进行R值测量的两项主要误差来源. 过去实验只选取等于或者大于2叉的强子事例, 因而0叉和1叉事例的丢失将导致强子事例数和强子探测效率的较大误差. 试图提出在R值测量中选取包含1叉强子事例在内的样本, 这将有助于更合理地调节强子事例产生器LUARLW的参数, 减小强子探测效率和R值测量的系统误差.     

再论各向异性单轴晶体的布儒斯特角

从各向同性介质和各向异性单轴晶体界面间的菲涅耳公式出发,进一步研究了当自然光从各向同性介质射向各向异性且光轴任意取向的单轴晶体界面上时,其反射光成为垂直入射面的线偏振光时所对应的入射角,即布儒斯特角是否存在的问题,并对该问题进行了较全面的论述,计算了相应条件下的布儒斯特角和有关参量的数值,得到了正确的结论,同时也指出了某些文献在论述该问题时的不妥之处.     

Strong Correlation of Fluorescence Photons without Quantum Interference

It has been predicted that a driven three-level V atom can emit strongly correlated fluorescence photons in the presence of quantum interference. Here we examine the effects of quantum interference on the intensity correlation of fluorescence photons emitted from a driven three-level A atom. Unexpectedly, strong correlation occurs without quantum interference. The quantum interference tends to reduce the correlation function to a normal level. The essential difference between these two cases is traced to the different effects of quantum interference on coherent population trapping （OPT）. For the V atom, quantum interference and coherent excitation combine to lead to OPT. For the A atom, however, the quantum interference tends to spoil OPT while the coherent excitation induces the effect.     

Transient and Stationary Simulations for a Quantum Hydrodynamic Model

The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are comparatively studied for semiconductor charge transport in a resonant tunnelling diode. When the bias is not small, our numerical results show a deviation of the asymptotic transient solutions from the stationary ones. A dynamic instability accounts for such deviation. The stationary quantum hydrodynamic model is therefore unsuitable in general for simulating quantum devices.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Fresnel-Transform＇s Quantum Correspondence and Quantum Optical ABCD Law

Corresponding to the Fresnel transform there exists a unitary operator in quantum optics theory, which could be known the Fresnel operator （FO）. We show that the multiplication rule of the FO naturally leads to the quantum optical ABCD law. The canonical operator methods as mapping of ray-transfer ABCD matrix is explicitly shown by the normally ordered expansion of the FO through the coherent state representation and the technique of integration within an ordered product of operators. We show that time evolution of the damping oscillator embodies the quantum optical ABCD law.     

Measuring Grüneisen Parameter of Lead by High Pressure-Jump Method

Using the technology of pressure jump, variations of temperature associated with pressure from 2.4 GPa to 4.6 GPa are measured for lead. The Grfuneisen parameter is calculated from the thermodynamic relation γ =（Ks/T）（aT/aP）s, in which substitution of △T/△P for aT/aP at median pressure is strictly justified. The correction of temperature change is carried out by analysing the experimental data, which makes the process more approaching to an adiabatic condition. The calculated values of △T/ △ P and γ gradually decrease with the increasing pressure. The decrease trend is consistent with the previous work. The γ values in the range of 2-3 GPa are averagely higher than the results of Ramakrishnan et al., indicating the effect of temperature correction. The improved method is promising for measurements of Grfineisen parameter to higher pressure range.     

Elastic Scattering of Ultracold ^133Cs and SSRb Atoms in Triplet State

Elastic scattering properties of the ultracold interaction for the triplet state of ^133Cs and ^85Rb atoms are studied using two kinds of potentials by the same phase Ф. One is the interpolation potential, and another is Lennard-Jones potential （LJl2,6 ）. The radial Schrodtinger equation is also solved using two computational methods, the semiclassical method （WKB）, and the Numerov method. Our results are found to be in an excellent agreement with the more recent theoretical values. It shows that the two potentials and methods are applicable for studying ultracold collisions between the mixing alkali atoms.     

First-Principles Study of Structural and Electronic Properties of Layered B2CN Crystals

Based on the hexagonal BN structure, six possible layered B~ CN structures are constructed. Their total energies, lattice constants as well as electronic properties are calculated using the ab initio pseudopotential density functional method within the local density approximation. The calculated results show that the B2 CN-V configuration with AA stacking sequence is the most stable among the six B2CN layered structures. The characteristics of electronic structures indicate that the B2 CN-V shows metallicity, which mainly comes from -B1-C-B1-C- chains.     

Intense Green Upconversion Luminescence in Er^3＋：Yb^3＋ Codoped Fluorophosphate Glass Ceramic Containing SrTe5O11 Nanocrystals

Er^3＋ ：Yb^3＋ codoped tellurite-fluorophosphate （TFP） glass ceramic exhibits much stronger upconversion luminescence. The intensity of the 540nm green light and 651 nm red light of the TFP glass ceramic is 120 times and 44 times stronger than that of the fluorophospahte （FP） glass, respectively. XRD analysis shows that the nanocrystal in TFP glass ceramic is SrTe5O11. TFP glass ceramic also displays much higher upconversion fluorescence lifetime and crystallization stability. The narrow and strong peak at 540nm is very ideal for practical upconversion luminescence realization. This work is a new trial for exploring non-PbF2 involved nanocrystal upconversion glass ceramics.