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When solving large complex optimization problems, the user is faced with three major problems. These are (i) the cost in human time in obtaining accurate expressions for the derivatives involved; (ii) the need to store second derivative information; and (iii), of lessening importance, the time taken to solve the problem on the computer. For many problems, a significant part of the latter can be attributed to solving Newton-like equations. In the algorithm described, the equations are solved using a conjugate direction method that only needs the Hessian at the current point when it is multiplied by a trial vector. In this paper, we present a method that finds this product using automatic differentiation while only requiring vector storage. The method takes advantage of any sparsity in the Hessian matrix and computes exact derivatives. It avoids the complexity of symbolic differentiation, the inaccuracy of numerical differentiation, the labor of finding analytic derivatives, and the need for matrix store. When far from a minimum, an accurate solution to the Newton equations is not justified, so an approximate solution is obtained by using a version of Dembo and Steihaug's truncated Newton algorithm (Ref. 1).This paper was presented at the SIAM National Meeting, Boston, Massachusetts, 1986. 相似文献
44.
Dr. H. Schmieg Prof. Dr. P. Vielsack 《Archive of Applied Mechanics (Ingenieur Archiv)》1987,57(6):446-458
Übersicht Betrachtet wird ein zwangserregtes Zweikörpersystem mit wechselnden Bindungen infolge trockener Reibung. Stationäre Bewegungen werden als Grenzfall instationärer Einschwingvorgänge berechnet. Abhängig von den Systemparametern ergeben sich drei typische Bewegungsformen. Ihnen entsprechen dauernde Haftzustände, wechselnde Haft-Gleitzustände oder dauernde Gleitzustände an der Berührfläche beider Körper.
Intermittant constraints in a two-body-system with dry friction
Summary An externally excited two-body-system with intermittant constraints due to dry friction is considered. Stationary motions are calculated as limit cases of instationary transients. Depending on the parameters of the system, three typical modes are of interest. These correspond to permanent sticking, slipstick behaviour, or to permanent slipping in the contact surface of the bodies, respectively.相似文献
45.
46.
The occurrence and formation of black spots areas in PolyLED devices has been studied by time-of-flight SIMS (TOFSIMS). The composition, shape and position of the black spots is visualised by three-dimensional (3D)-TOFSIMS depth-profiling. It has been established that the formation of non-emissive spots is due to the growth of aluminium oxide clusters at the AlBa/polymer interface. Electron injection in the black spots is lost by the resulting local increase of the resistivity of the cathode. 相似文献
47.
We initiate a program to study certain recent problems in non-compact coset CFT by the BRST approach. We derive a reduction formula for the BRST cohomology by making use of a twisting by highest weight modules. As illustrations, we apply the formula to the bosonic string model and a rank one non-compact coset model [DPL]. Our formula provides a completely new approach to non-compact coset construction.Partially supported by NSF Grant DMS-8703581 相似文献
48.
Summary In this paper a Gauss-Jordan algorithm with column interchanges is presented and analysed. We show that, in contrast with Gaussian elimination, the Gauss-Jordan algorithm has essentially differing properties when using column interchanges instead of row interchanges for improving the numerical stability. For solutions obtained by Gauss-Jordan with column interchanges, a more satisfactory bound for the residual norm can be given. The analysis gives theoretical evidence that the algorithm yields numerical solutions as good as those obtained by Gaussian elimination and that, in most practical situations, the residuals are equally small. This is confirmed by numerical experiments. Moreover, timing experiments on a Cyber 205 vector computer show that the algorithm presented has good vectorisation properties. 相似文献
49.
Aspects of Generic Entanglement 总被引:4,自引:4,他引:0
Patrick Hayden Debbie W. Leung Andreas Winter 《Communications in Mathematical Physics》2006,265(1):95-117
We study entanglement and other correlation properties of random states in high-dimensional bipartite systems. These correlations
are quantified by parameters that are subject to the ``concentration of measure' phenomenon, meaning that on a large-probability
set these parameters are close to their expectation. For the entropy of entanglement, this has the counterintuitive consequence
that there exist large subspaces in which all pure states are close to maximally entangled. This, in turn, implies the existence
of mixed states with entanglement of formation near that of a maximally entangled state, but with negligible quantum mutual
information and, therefore, negligible distillable entanglement, secret key, and common randomness. It also implies a very
strong locking effect for the entanglement of formation: its value can jump from maximal to near zero by tracing over a number
of qubits negligible compared to the size of the total system. Furthermore, such properties are generic. Similar phenomena
are observed for random multiparty states, leading us to speculate on the possibility that the theory of entanglement is much
simplified when restricted to asymptotically generic states. Further consequences of our results include a complete derandomization
of the protocol for universal superdense coding of quantum states. 相似文献
50.
Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation. 相似文献