Doppler cooling a single Ca+ ion with a violet extended-cavity diode laser

We present a scheme for employing a violet extended-cavity diode laser in experiments with single, trapped ions. For this the grating-stabilised laser is spatially and spectrally filtered and referenced to a Fabry–Pérot cavity. We measure an upper limit to the line width by observing a 305-kHz FWHM beat note with the second harmonic of a titanium sapphire laser. The laser is subsequently used to optically cool a single ⁴⁰Ca⁺ ion close to the Doppler limit. PACS 03.67.Lx; 32.80.Pj; 42.55.Px     

Vibration analysis of planar serial-frame structures

A hybrid analytical/numerical method is proposed that permits the efficient dynamic analysis of planar serial-frame structures. The method utilizes a numerical implementation of a transfer matrix solution to the equation of motion. By analyzing the transverse and longitudinal motions of each segment simultaneously and considering the compatibility requirements across each frame angle, the undetermined variables of the entire frame structure system can be reduced to six which can be determined by application of the boundary conditions. The main feature of this method is to decrease the dimensions of the matrix involved in the finite element methods and certain other analytical methods.     

Ultrafast carrier dynamics in ferromagnetic InGaMnAs

We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons.     

Microstructure and high-temperature wear resistance of a laser surface alloyed γ-TiAl with carbon

TiC reinforced composite coating on γ-TiAl alloy was successfully fabricated by laser surface alloying with carbon. The fine TiC reinforcing phase had a gradient distribution in the coating, and its growth morphology of TiC in laser surface alloyed coating was in unique faceted platelet-like. The composite coating exhibited high hardness and excellent high-temperature sliding wear resistance.     

Generation of angular momentum of fission fragments in a cluster model

Based on the dinuclear system concept, the role of bending vibrations in creation of the angular momentum of primary fission fragments is investigated. For ²⁵²Cf spontaneous fission, the angular momenta of the fragments are calculated as a function of the neutron multiplicity and compared with available experimental data. Different cluster compositions of the ²⁵²Cf fission modes at the scission point are considered.     

Justification of Averaging Method for Multifrequency Impulsive Systems

We prove new theorems on the justification of the averaging method for multifrequency oscillation systems with pulse influence at fixed times.     

InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.     

Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn²⁺3d⁵+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state.