Eine Notiz zum A-Typ der Lanthanoidoxide: Über Pr2O3

The A-type of Lanthanoide Oxides: On Pr₂O₃ . “Reductive” thermal decomposition of K₂PrO₃ [Ni-cylinder, semi-open system, 1000°C, 14 d] leads for the first time to light green single crystals of Pr₂O₃. The structure determination [105 symmetry independent hkl, four circle diffractometer Philips PW 1100; MoKα; R = 6.30%, R_w = 5.01%; space group P3m1; Z = 1; a = 385.77(3), c = 601.20(6) pm] verifies the A-type according to the proposed structure by PAULING .     

Reaction of K[(π-C5H5)Fe(CO)(CN)2] with boranes and AlCl3: Preparation and investigation of iron(II) complexes containing isocyanoborate ligands

Iron(II) complexes containing CNBX^?₃ or CNBX₂NC^? ligands were prepared from the reaction of K[(π-C₅H₅)Fe(CO)(CN)₂] with boranes (BX₃; X = F, Cl, Br H, Ph). Stable, twelve-membered ring compounds containing Fe, C, N, and B atoms were formed involving CNBF₂NC^? and CNBBr₂NC^? ligands. The reaction of K[(π-C₅H₅)Fe(CO)(CN)₂] with AlCl₃ gave a four-center complex with two Fe and two Al atoms. The compounds were studied by infrared and mass spectroscopic methods.     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

Debye screening of dislocations

Debye-like screening by edge dislocations of some externally given stress is studied by means of a variational approach to coarse grained field theory. Explicitly given are the force field and the induced geometrically necessary dislocation (GND) distribution, in the special case of a single glide axis in 2D, for (i) a single edge dislocation and (ii) a dislocation wall. Numerical simulation demonstrates that the correlation in relaxed dislocation configurations is in good agreement with the induced GND in case (i). Furthermore, the result (ii) well predicts the experimentally observed decay length for the GND developing close to grain boundaries.     

Quantum Tomography under Prior Information

We provide a detailed analysis of the question: how many measurement settings or outcomes are needed in order to identify an unknown quantum state which is constrained by prior information? We show that if the prior information restricts the possible states to a set of lower dimensionality, then topological obstructions can increase the required number of outcomes by a factor of two over the number of real parameters needed to characterize the set of all states. Conversely, we show that almost every measurement becomes informationally complete with respect to the constrained set if the number of outcomes exceeds twice the Minkowski dimension of the set. We apply the obtained results to determine the minimal number of outcomes of measurements which are informationally complete with respect to states with rank constraints. In particular, we show that the minimal number of measurement outcomes (POVM elements) necessary to identify all pure states in a d-dimensional Hilbert space is 4d?3?c(d) α(d) for some ${c(d)\in[1,2]}$ and α(d) being the number of ones appearing in the binary expansion of (d?1).