Inhibitors for organic phosphonic acid system abrasive free polishing of Cu

Organic phosphonic acid system abrasive free slurry for copper polishing is developed in our earlier work. Since material removal rate is too high to be applied as precision polishing slurry for copper, inhibitors are needed. Experiment results also show us that the most commonly used inhibitor benzotriazole is unsuitable for this abrasive free slurry, and then another kind of compound inhibitors for this organic phosphonic acid system abrasive free slurry are developed. The compound inhibitors, consisting of ascorbic acid and ethylene thiourea, can control the material removal rate and also reduce surface roughness. XPS results show that, in the compound inhibitors, ascorbic acid participates in the surface chemical reaction, forms passivating layer on copper surface and helps to control the material removal rate. Corrosion current calculated from polarization curve is consistent with material removal rate. Ethylene thiourea contributes to the reduction of surface roughness, which can be indicated by the peak shape change of S_2p in XPS results.     

980 nm Yb-doped double-clad photonic crystal fiber amplifier and its frequency doubling

In this paper, we report on a large-mode-area double-clad 980 nm Yb-doped photonic crystal fiber (PCF) amplifier. In the experiment, an output power of 1.21 W at 980 nm with 2.5 nm bandwidth has been yielded when the PCF length was 40 cm. Through frequency doubling the 980 nm amplified laser with a BIBO crystal, an output power of 51 mW at 490 nm has been generated.     

Ba0.5Sr0.5Co0.8Fe0.2O3-δ晶格缺陷、电性能与氧渗透研究

对新型氧渗透材料Ba0 .5 Sr0 .5 Co0 .8Fe0 .2 O3 -δ(BSCF)进行了O2 TPD表征、非化学计量 (δ)测定、电导率 (σ)测量和氧渗透性能测试的研究 .结果表明 ,经纯氧气氛处理后的BSCF ,其O2 TPD谱存在三个失氧峰 :低温峰对应于晶格中V O 位置上的吸附氧 ,高温区两个峰对应于晶格中两种不同位置的晶格氧 ;σ对温度的实验表明 ,不论在升温还是降温过程中 ,σ在 470℃左右均出现极大值 ,可能与BSCF体系的δ值随温度变化相关 ;氧渗透实验表明 ,850℃以上 ,BSCF的氧渗透率JO2 较大 ,达到 1μmol/cm2 s ,活化能较低 ,Ea =63 .1kJ/mol ,而低于 850℃时 ,存在相分解     

Structural and mechanical properties of nano-crystal TiN coatings

The structural and mechanical properties of TiN coatings prepared by ion beam assisted deposition (IBAD) were studied. The coatings have a polycrystal structure with grain size of ≈10nm or less. The hardness of the coatings increases with increasing grain size of TiN crystallites. The coating with grain size of 10.3 nm even has a superhardness of 44.7 GPa. The relationship between the hardness and the grain size in the nano-crystalline coatings was discussed on the basis of grain-boundary triple junctions.

     

环镜对激光束变换的理论分析与实验

介绍一种新型的光学元件，它可把一束激光变换成一个两维的激光平面。本文用多光束干涉的原理解释了光平面形成的原理，同时对应用前景及实用情况也作了一些估计     

安息香肟碳糊修饰电极快速线性扫描伏安法测定铜

本文报道了一种用络合剂安息香肟制备的化学修饰电极。由于安息香肟对Cu(Ⅲ)的络合有特殊的选择性,电极可以选择性富集溶液中的Cu(Ⅲ)。经过电位还原,并可采用快速线性扫描伏安法进行定量分析。检测限可达10~(-9)mol/L浓度。采用本文法对成分复杂的阳极泥等样品进行直接测定,得到了令人满意的结果。     

Effects of the ultrasonic flexural vibration on the interaction between the abrasive particles; pad and sapphire substrate during chemical mechanical polishing (CMP)

In this paper, the technique of ultrasonic flexural vibration assisted chemical mechanical polishing (UFV-CMP) was used for sapphire substrate CMP. The functions of the polishing pad, the silica abrasive particles, and the chemical additives of the slurry such as pH value regulator and dispersant during the sapphire's UFV-CMP were investigated. The results showed that the actions of the ultrasonic and silica abrasive particles were the main factors in the sapphire material removal rate (MMR) and the chemical additives were helpful to decrease the roughness of sapphire. Then the effects of the flexural vibration on the interaction between the silica abrasive particles, pad and sapphire substrate from the kinematics and dynamics were investigated to explain why the MRR of UFV-CMP was bigger than that of the traditional CMP. It indicated that such functions improved the sapphire's MRR: the increasing of the contact silica particles’ motion path lengths on the sapphire's surface, the enhancement of the contact force between the contact silica particles and the sapphire's surface, and the impaction of the suspending silica particles to the sapphire's surface.     

铅在二苯乙醇酮肟修饰电极上的络合富集和电化学行为

本文报道了一种对Pb(Ⅱ)具有高灵敏度和选择性的碳糊化学修饰电极。该电极由碳粉中加入修饰剂二苯乙醇酮肟制备而成。通过开路富集,Pb(Ⅱ)和二苯乙醇酮肟形成络合物浓集于电极表面,然后经介质支换、电位还原再进行阳极扫描测定,检测限为8.0×10~(-9)mol/L(1.6ppb)Pb(Ⅱ)。在浓度为10~(-7)～10~(-8)mol/LPb(Ⅱ)范围内,峰电流与浓度具有线性关系。此修饰电极可直接从试液中选择性地富集和测定Pb(Ⅱ),大多数金属离子对测定均无干扰。     

锂皂石修饰碳糊电极测定痕量铜的研究

报道了锂皂石修饰碳糊电极测定痕量铜，在含０．００１ｍｏｌ／Ｌ ＫＣｌ Ｃｕ＾＋２的试液中，开路富集后介质交换到０．０５ｍｏｌ／Ｌ ＫＣｌ中，用微分脉冲伏安法测定，检测限为７．０ｎｇ／ｍＬ。常见阳离子基本不干扰，可不经预先分离直接测定精金矿中铜的含量，结果良好。还探讨了Ｃｕ＾＋２在锂皂石修饰碳糊电极上的反应机理。     

指挥控制装备软件保障系统设计及实现

作为软件密集型装备,指挥系统的软件保障需求明显;简要介绍装备系统软件结构及主要功能,对其在部队使用过程中出现的问题进行分析;提出软件保障工具的主要功能及系统设计方案,并对系统实现方法进行详细说明。应用表明:指挥系统软件保障系统对提高部队软件保障能力具有重要意义。