深蚀刻二元光学元件

提出一种新颖的，蚀刻位相深度超过２π的深蚀刻二元光学技术，并从理论上分析深蚀刻二元光这元件与衍射效率的关系，然后用计算机进行模拟与分析，得到深蚀刻二元光学元件特性后一些初步研究结果。     

Some sufficient conditions for tunnel numbers of connected sum of two knots not to go down

In this paper, we show the following result: Let K _i be a knot in a closed orientable 3-manifold M _i such that (M _i ,K _i ) is not homeomorphic to (S ₂ ×S ₁, x ₀ ×S ₁), i = 1, 2. Suppose that the Euler Characteristic of any meridional essential surface in each knot complement E(K _i ) is less than the difference of one and twice of the tunnel number of K _i . Then the tunnel number of their connected sum will not go down. If in addition that the distance of any minimal Heegaard splitting of each knot complement is strictly more than 2, then the tunnel number of their connected sum is super additive.     

Determination of a differential pencil from interior spectral data

In this paper, inverse spectra problems for a differential pencil are studied. By using the approach similar to those in Hochstadt and Lieberman (1978) [14] and Ramm (2000) [26], we prove that (1) if p(x) (or q(x)) is full given on the interval [0,π], then a set of values of eigenfunctions at the mid-point of the interval [0,π] and one spectrum suffice to determine q(x) (or p(x)) on the interval [0,π] and all parameters in the boundary conditions; (2) if p(x) (or q(x)) is full given on the interval [0,π], then some information on eigenfunctions at some internal point and parts of two spectra suffice to determine q(x) (or p(x)) on the interval [0,π] and all parameters in the boundary conditions.     

柔性有机场效应晶体管研究进展

柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域. 关键词： 柔性 晶体管 有机/聚合物 溶液加工     

Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (R_S/R_D) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters.     

Effect of the nonlinearity of the CCD in Fourier transform profilometry on spectrum overlapping and measurement accuracy

In Fourier transform profilometry (FTP), we must restrain spectrum overlapping caused by the nonlinearity of the charge coupled device (CCD) and increase the measurement accuracy of the object shape. Firstly, the causes of producing higher-order spectrum components and inducing spectrum overlapping are analysed theoretically, and a simple physical explanation and analytical deduction are given. Secondly, aiming to suppress spectrum overlapping and improve measurement accuracy, the influence of spatial carrier frequency of projection grating on them is analysed. A method of increasing the spatial carrier frequency of projection grating to restrain or reduce the spectrum overlapping significantly is proposed. We then analyze the mechanism of how the spectrum overlapping is reduced. Finally, the simulation results and experimental measurements verify the correction of the proposed theory and method.     

Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investi-gated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.     

The pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations,based on norm-conserving nonlocal pseudopotentials and density functional theory(DFT),are performed to investigate the structural,elastic,dielectric,and vibrational properties of aluminum arsenide(AlAs) with a zinc-blende(B3) structure and a nickel arsenide(B81) structure under hydrostatic pressure.Firstly,the path for the phase transition from B3 to B81 is confirmed by analyzing the energies of different structures,which is in good agreement with previous theoretical results.Secondly,we find that the elastic constants,bulk modulus,static dielectric constants,and the optical phonon frequencies vary in a nearly linear manner under hydrostatic pressure.What is more,the softening mode of the transversal acoustic mode at the X point supports the phase transition in AlAs.     

基于异步时序的高帧频相机垂直拖尾处理

介绍一种高帧频相机垂直拖尾影响的解决方法,该方法同时考虑连续采集模式下帧间图像和像元合并（binning）技术的影响。与常用的静态图像拖尾处理的算法如逆向逐行修正算法相比,该算法非常适用于连续图像拖尾处理,特别是经过Binning后获取的图像。在某自主研制的基于异步时序的40 000 帧/秒高速相机中应用该方法,有效去除了拖尾影响。最后,运用该方法处理的图像验证了算法的有效性。