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81.
Z. X. Jiang K. Kim D. D. Sieloff T. Y. Luo A. Varghese D. H. Triyoso T. Guenther B. Robichaud J. Benavides 《Surface and interface analysis : SIA》2008,40(10):1397-1401
Good accuracy in depth profile analyses of nitrogen in ultrathin oxynitride films is desirable for process development and routine process monitoring. Low energy SIMS is one of the techniques that has found success in the accurate characterization of thin oxynitride films. This work investigated the artifacts in a typical depth profile analysis of nitrogen with the current SIMS technique and the ways to improve the accuracy by selecting optimal analytical conditions. It was demonstrated that surface roughness developed rapidly in a SiO2/Si stack when it was bombarded with an O2+ beam at 250 eV and angle of incidence from 70 to 79° . The roughness caused distortion in the measured depth profiles of nitrogen and the major component elements. However, the above roughness and the distortion in the depth profiles can be eliminated by using a 250 eV O2+ beam at an angle of incidence above 80° . Depth profile analyses with a 250 eV 83° O2+ beam exhibited minimal surface roughening and insignificant variation in the secondary ion yield of SiN? from SiO2 bulk to the SiO2/Si interface, facilitating an accurate analysis of nitrogen distribution in a SiO2/Si stack. In addition, depth profiles of the major component elements such as 18O? and 28Si? delivered clear information on the location of the SiO2/Si interface. Using the new approach, we compared nitrogen distribution in thin SiNO films with the decoupled‐plasma nitridation (DPN) at various powers. Copyright © 2008 John Wiley & Sons, Ltd. 相似文献
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Andrzej Granas Ronald B. Guenther John W. Lee 《Journal of Fixed Point Theory and Applications》2009,6(1):27-61
Fixed point continuation methods and shooting methods are combined to produce an effective numerical procedure for solving
boundary value problems for nonlinear ordinary differential equations. Typical numerical solution schemes involve an iteration
procedure. Continuation methods systematically generate good initial guesses and, when combined with a shooting method and
an appropriate update procedure, give systematic means for the numerical solution of nonlinear boundary value problems. This
paper concentrates on problems of Bernstein type, which arise naturally in the calculus of variations and in steady-state
heat conduction. 相似文献
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Black crystals of [Rh(Te6)]Br3 (I), [Rh(Te6)]I3 (II), [Ir(Te6)]Cl3 (III), [Ir(Te6)]Br3 (IV), and [Ir(Te6)]I3 (V) are prepared from stoichiometric mixtures of Rh or Ir, Te, and TeX4 (X: Cl, Br, I; evacuated silica tube, 300—350 °C, 7 d). 相似文献