Far IR harmonic oscillators in triglycine sulphate at 7 K

Transmission spectra of very thick TGS single crystals (e.g. thickness 8 mm) observed in the Far IR at 7 K do not need a high spectral resolution and nevertheless give evidence of Lorentz oscillators with damping coefficients as small as those considered for water vapour at a pressure of 0.2 atmospheres.     

二茂铁有机锡衍生物的13C,119Sn NMR研究

本文测定了几种二茂铁有机锡衍生物的¹¹⁹Sn,¹³C NMR谱。对其中几种衍生物的¹³C NMR谱进行了归属,从而进一步验证了这类化合物的结构。着重讨论了结构如化合物中取代基X的改变对¹¹⁹Sn化学位移的影响。并对结构如 类化合物N→Sn异侧配位的问题进行了讨论。     

超短脉冲激光微束对细胞作用的研究

本文详细地介绍了我们自己设计和安装的一个Nd:YAG超短脉冲激光微束系统,该系统分成二个部分:激光源和显微镜。由电光调Q非稳腔Nd:YAG激光倍频后得到355nm紫外光进入显微镜并由物镜聚焦。同时,这超短脉冲激光微束照射在细胞上并且在细胞上产生一个可以自恢复的小孔。在文中我们还讨论了超短脉冲激光微束与细胞之间作用效应及机理。     

多电子束契伦柯夫自由电子激光振荡器

我们对多电子束契伦柯夫自由电子激光进行了首次实验研究。280A,500kV的电子束被引入一多介质矩形谐振腔,在频率为33.4GHz处产生了1.7MW的契伦柯夫相干受激辐射。互作用效率为1.2％。     

方位伺服系统扭转振动固有频率的分析

本文阐述了伺服系统结构设计中估算系统固有频率的必要性,介绍了一种分析和计算经纬仪方位伺服系统扭转振动固有频率的方法。     

Quantitative measurements of Ge surface segregation during SiGe alloy growth

Ge segregation during the growth of Si_{1 − x}Ge_x alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation.     

Radon变换和衰减Radon变换的分析研究

衰减Radon变换出现在单光子放射型计算机层析成像中。本文首先回顾和研究了Radon变换和衰减Radon变换及其反演的有关结论，进而提出了Tretiak-Metz结果的一种新证明方法，对于一般对象，本文用变换方法非滤子背投影法导出了衰减Radon变换的反演公式。     

Smoothing minimally supported frequency wavelets: Part II

The main purpose of this paper is to give a procedure to “mollify” the low-pass filters of a large number ofMinimally Supported Frequency (MSF) wavelets so that the smoother functions obtained in this way are also low-pass filters for an MRA. Hence, we are able to approximate (in the L ² -norm) MSF wavelets by wavelets with any desired degree of smoothness on the Fourier transform side. Although the MSF wavelets we consider are bandlimited, this may not be true for their smooth approximations. This phenomena is related to the invariant cycles under the transformation x ↦2x (mod2π). We also give a characterization of all low-pass filters for MSF wavelets. Throughout the paper new and interesting examples of wavelets are described.     

Formulation and survey of ALE method in nonlinear solid mechanics

This paper investigates the applicability and accuracy of existing formulation methods in general purpose finite element programs to the finite strain deformation problems. The basic shortcomings in using such programs in these applications are then pointed out and the need for a different type of formulation is discussed. An arbitrary Lagrangian-Eulerian (ALE) method is proposed and a concise survey of ALE formulation is given. A consistent and complete ALE formulation is derived from the virtual work equation transformed to arbitrary computational reference configurations. Differences between the proposed formulations and similar ones in the literature are discussed. The proposed formulation presents a general approach to ALE method. It includes load correction terms and is suitable for rate-dependent and rate-independent material constitutive law. The proposed formulation reduces to both updated Lagrangian and Eulerian formulations as special cases.     

Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy

Doping studies of the incorporation behaviour of three different dopants (Zn, In and Si) versus the misorientation of the (100) surface during MOVPE growth of GaAs have been carried out with diethylzinc, trimethylindium and disilane as precursors. The incorporation of the dopants has been studied as function of the input mole fraction dopant, growth temperature, degree and direction of misorientation. In order to explain the results we discuss the BCF theory and the nature of the steps as function of above mentioned parameters. It appears that the BCF theory alone cannot explain the results, a counteracting mechanism has been introduced based on preferential arsenic desorption from the step edges.