Interaction effects and phase relaxation in disordered systems

This paper is intended to demonstrate that there is no need to revise the existing theory of the transport properties of disordered conductors in the so-called weak localization regime. In particular, we demonstrate explicitly that recent attempts to justify theoretically that the dephasing rate (extracted from the magnetoresistance) remains finite at zero temperature are based on a profoundly incorrect calculation. This demonstration is based on a straightforward evaluation of the effect of the electron-electron interaction on the weak localization correction to the conductivity of disordered metals. Using well controlled perturbation theory with the inverse conductance g as the small parameter, we show that this effect consists of two contributions. The first contribution comes from the processes with energy transfer smaller than the temperature, and is responsible for setting the energy scale for the magnetoresistance. The second contribution originates from the virtual processes with energy transfer larger than the temperature. It is shown that the latter processes have nothing to do with the dephasing, but rather manifest the second-order (in 1/g) correction to the conductance. This correction is calculated for the first time. The paper also contains a brief review of the existing experiments on the dephasing of electrons in disordered conductors and an extended qualitative discussion of the quantum corrections to the conductivity and to the density of electronic states in the weak localization regime.     

在硅胶表面制备牛血红蛋白分子印迹聚合物

采用表面印迹法, 以乙烯基三甲氧基硅烷修饰的硅胶为载体, 丙烯酰胺为功能单体, N,N-亚甲基双丙烯酰胺为交联剂, 并将改性聚乙烯醇(PVA)作为辅助识别聚合物链(ARPCs)引入聚合体系中, 制备了牛血红蛋白分子印迹聚合物(MIP). 实验使用红外光谱分析了改性PVA的结构特征, 用扫描电镜(SEM)观察MIP的表面形貌, 考察了ARPCs的含量对MIP吸附性能的影响. 吸附动力学实验研究表明, 聚合体系中ARPCs的引入使MIP对模板牛血红蛋白(BHb)的吸附量明显提高|十二烷基磺酸钠-聚丙烯酰胺凝胶电泳(SDS-PAGE)结果显示, MIP对BHb的特异性吸附能力明显提高.     

Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities n approximately (1-50)x10(11) cm(-2), which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility chi(*), the effective mass m(*), and the g(*) factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of chi(*) by a factor of approximately 4.7.     

TRANSFER MECHANISM OF QUININE DRUG ACROSS THE OIL/WATER (O/W) INTERFACE

The transfer phenomena of quinine drug at the aqueous 1,2- dichloroethane (DCE)interface have been studied by the current- scanning polarography. The relationships be-tween the wave height and pH of aqueous phase, concentration of quinine as well as therate of water drop are discussed. The effect of supporting electrolyte, buffer solution andthe nature of organic solvent on the polarographic wave is studied. The transfer char-acteristics of quinine in aqueous phase and in organic phase are compared, The mono- pro-tonated and diprotonated quinines can both transfer at the interface so as to produce twopolarographic waves. The transfer process of quinine at the interface is simultaneouslycontrolled by diffusion and reestablishment of the disturbed protonated equilibrium ofquinine. A further investigation is made by chronopotentiometry. On the basis of thetheoretical analysis, the formulae of the limiting current are derived and discussed. Thetheoretical results are in agreement with the experimental ones.     

Intrinsic charge transport on the surface of organic semiconductors

The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. Anisotropy of mu vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting mu, an indication that the filled traps do not scatter polarons.     

Unexpected negative nonmonotonic magnetoresistance of the two-dimensional electrons in Si in a parallel magnetic field

We report observation of the unexpected negative and nonmonotonic magnetoresistance of 2D electrons in Si-MOSFET subjected to a varying in-plane magnetic field superimposed on a constant perpendicular field component. We show that this nonmonotonic magnetoresistance is irrelevant to the energy spectrum of mobile 2D electrons. We also observed variations of the density of mobile electrons with the in-plane field. We argue that both variations of the negative magnetoresistance and of the density of mobile electrons originate from the band of localized states. The latter coexist and interact with mobile electrons even at relatively high density, a factor of 1.5 higher than the critical density of the apparent metal-insulator transition.     

Photoinduced charge transfer across the interface between organic molecular crystals and polymers

Photoinduced charge transfer of positive and negative charges across the interface between a single-crystal organic semiconductor and a polymeric insulator is observed in electric field-effect experiments. Immobilization of the transferred charge by deep traps in the polymer results in a shift of the threshold of field-induced conductivity along the semiconductor-polymer interface, which allows for direct measurements of the charge transfer rate. The transfer occurs when the photon energy exceeds the absorption edge of the semiconductor. The direction of the transverse electric field at the interface determines the sign of the transferred charge; the transfer rate is controlled by the field magnitude and light intensity.     

Interaction and localization effects in two-dimensional film of superconductor at T > Tc

The magnetic field and temperature dependence of the resistance of thin Al films have been investigated at T > T_c (T_c - superconducting transition temperature). The results are explained on the basis of localization and electron-electron interaction theory in two-dimensional disordered systems. The temperature dependence of inelastic scattering time and interaction constant for such films is found.