Raman spectra and structure of As40−xS60Ix glasses

The Raman spectra of bulk As_40?xS₆₀I_x glasses with 0?x?20 have been studied. The obtained spectra can be successfully explained assuming the structure of these glasses to be composed of As₂S_3.45 polymer network matrix with dissolved AsBr₃ and S₈ molecules.     

Carbon monoxide and hydrogen chemisorption studies on small supported iron carbide particles

The influence of chemisorption of CO and H₂ has been studied on small iron carbide particles by Mössbauer spectroscopy. The line with is increased by 2–3 times upon evacuation and also the values of isomer shift and magnetic hyperfine field were increased in vacuum. The effect is attributed to the chemisorption induced uniformization of the magnetic exchange interaction among the particles.     

Study of the excitation functions of27Al(n, α)24Na,27Al(n,p)27Mg and28Si(n,p)28Al reactions

Cross sections for the reactions²⁷Al(n, p)²⁷Mg and²⁸Si(n,p)²⁸Al were measured by activation method between 13.40 and 14.83 MeV neutron energy. An accuracy of about 4% was achieved using the²⁷Al(n, α)²⁴Na reaction as a reference at 14.1 MeV where the relative excitation function has also been measured. Results obtained were compared to a recent compilation and that calculated by the Hauser-Feshbach model. Using the back-shifted level density formula and taking into account the contribution of the separated levels, the calculations were extended to the energy range from the threshold to 18 MeV. A structure was observed in the²⁷Al(n, α)²⁴Na reaction cross section curve around 14 MeV neutron energy.     

Atoms in Boolean powers

We show that the Boolean power of an orthomodular latticeL is atomic if and only if bothL and the underlying Boolean algebraB are atomic. We describe the set of all atoms in the Boolean power.     

Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser

A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N₂O and SiH₄, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO _x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.     

XPS and XAES study of the interaction of palladium and copper overlayers with fullerene films

X-ray photoelectron and Auger spectroscopies were used to examine surface bonding and overlayer growth during palladium and copper deposition onto films of fullerene, C₆₀ The results were consistent with metal cluster formation on C₆₀. The observed positive core electron binding energy shifts in small metallic clusters supported on C₆₀ were shown to originate in metal-fullerene interaction accompanied by charge transfer. Palladium-fullerene intermixing at temperatures as low as ss 50°C was observed for small Pd coverages.