Real-time phase measurement and correction of dynamic multimode beam using a single spatial light modulator

In this Letter,a novel system for adaptively correcting the phase of a dynamic multimode beam is proposed.While using merely one spatial light modulator,the phase measurement of the first-order diffraction pattern and the correction of the zeroth diffraction order are simultaneously realized.The real-time experimental result is obtained at a control rate of 10 Hz.The power-in-the-bucket value is improved from 38.5%to 61.8%,even with fundamental mode content that is consistently below 30%.To the best of our knowledge,this is the first implementation of real-time adaptive correction of the entire multimode beam.     

Geometric phase of an open double-quantum-dot system detected by a quantum point contact

We study theoretically the geometric phase of a double-quantum-dot(DQD) system measured by a quantum point contact(QPC) in the pure dephasing and dissipative environments, respectively. The results show that in these two environments, the coupling strength between the quantum dots has an enhanced impact on the geometric phase during a quasiperiod. This is due to the fact that the expansion of the width of the tunneling channel connecting the two quantum dots accelerates the oscillations of the electron between the quantum dots and makes the length of the evolution path longer.In addition, there is a notable near-zero region in the geometric phase because the stronger coupling between the system and the QPC freezes the electron in one quantum dot and the solid angle enclosed by the evolution path is approximately zero,which is associated with the quantum Zeno effect. For the pure dephasing environment, the geometric phase is suppressed as the dephasing rate increases which is caused only by the phase damping of the system. In the dissipative environment,the geometric phase is reduced with the increase of the relaxation rate which results from both the energy dissipation and phase damping of the system. Our results are helpful for using the geometric phase to construct the fault-tolerant quantum devices based on quantum dot systems in quantum information.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

Investigation of active-region doping on InAs/GaSb long wave infrared detectors

The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.     

Biodegradable Black-Phosphorus-Nanosheet-Based Nanoagent for Enhanced Chemo-Photothermal Therapy

Black phosphorus nanosheet (BPNS) is a promising multifunctional material in the biomedical field with biodegradability and low side effects, however its features are always weakened severely owing to its poor stability. Here, a novel method is developed for improving the defect of BPNS based on the effective protection of poly(lactic-co-glycolic acid) (PLGA), which preserves the stable photothermal therapy (PTT) effect of BPNS and biodegradability of the material. Meanwhile, doxorubicin (DOX) is loaded on BPNS/PLGA to get BPNS/PLGA/DOX for further chemotherapy and preventing the recurrence of tumor after PTT. The presented combined therapeutic strategy exploits the strengths and improves the defects of BPNS, thus developing an efficient and safe nanoagent for cancer therapy, which affords and reveals the great potential of BPNS in nanomedicine.     

Sparse Multicategory Generalized Distance Weighted Discrimination in Ultra-High Dimensions

Distance weighted discrimination (DWD) is an appealing classification method that is capable of overcoming data piling problems in high-dimensional settings. Especially when various sparsity structures are assumed in these settings, variable selection in multicategory classification poses great challenges. In this paper, we propose a multicategory generalized DWD (MgDWD) method that maintains intrinsic variable group structures during selection using a sparse group lasso penalty. Theoretically, we derive minimizer uniqueness for the penalized MgDWD loss function and consistency properties for the proposed classifier. We further develop an efficient algorithm based on the proximal operator to solve the optimization problem. The performance of MgDWD is evaluated using finite sample simulations and miRNA data from an HIV study.     

氮低温制冷循环系统在大科学装置中的应用与发展

大科学装置中低温设备的氮低温冷量需要日益快速增长,为减少能耗和保障装置的长期稳定运行,基于大科学装置氮低温系统运行需求,介绍了氮低温制冷循环系统在国内外大科学装置中的应用情况,总结了目前大科学装置中应用氮低温制冷循环系统的研究现状,并探讨以氮制冷机为核心的氮低温制冷循环系统在未来大科学装置中发展方向。     

高阶有限单元边界积分方法

本文在文献[1]的基础上,将高阶元引入边界积分方程方法,对导热问题的求解作了详细说明,给出了几个算例。并在精度上与线性元做了比较。     

Ce掺杂6H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂6H-SiC的电子结构和光学性质进行理论计算.计算结果表明,未掺杂6H-SiC是间接带隙半导体,其禁带宽度为2.045 eV,掺杂Ce元素,带隙宽度下降为0.812 eV.未掺杂6H-SiC在价带的低能区,Si-3s、C-2s电子轨道对态密度的贡献较大,在价带的高能区,主要是由Si-3p、Si-3s、C-2p态组成.掺杂后Ce原子的4f轨道主要贡献在导带部分,掺杂后电导率提高.未掺杂时,只有一个介电峰,是价带电子跃迁到导带电子所致,掺杂后有两个介电峰,第一个介电峰是由于导带电子跃迁到Ce原子4f轨道上产生,第二个峰是价带电子向导带电子跃迁产生.未掺杂6H-SiC,在能量为10.31 eV处吸收系数达到最大值,掺杂后在能量为6.57 eV处,吸收系数达到最大值.