Excitation functions of the analyzing power in elastic proton-proton scattering from 0.45 to 2.5 GeV

Excitation functions A_N(p_lab,_c.m.) of the analyzing power in elastic proton-proton scattering have been measured in an internal target experiment at the Cooler Synchrotron COSY with an unpolarized proton beam and a polarized atomic hydrogen target. Data were taken continuously during the acceleration and deceleration for proton kinetic energies T_lab (momenta p_lab) between 0.45 and 2.5 GeV (1.0 and 3.3 GeV/c) and scattering angles 30 ^° _c.m. 90^°. The results provide excitation functions and angular distributions of high precision and internal consistency. The data can be used as calibration standard between 0.45 and 2.5 GeV. They have significant impact on phase shift solutions, in particular on the spin triplet phase shifts between 1.0 and 1.8 GeV.     

Effect of graphene flake size on functionalisation: quantifying reaction extent and imaging locus with single Pt atom tags

Here, the locus of functionalisation on graphene-related materials and the progress of the reaction is shown to depend strongly on the starting feedstock. Five characteristically different graphite sources were exfoliated and functionalized using a non-destructive chemical reduction method. These archetypical examples were compared via a model reaction, grafting dodecyl addends, evaluated with TGA-MS, XPS and Raman data. A general increase in grafting ratio (ranging from 1.1 wt% up to 25 wt%) and an improvement in grafting stoichiometry (C/R) were observed as flake radius decreased. Raman spectrum imaging of the functionalised natural flake graphite identified that grafting is directed towards flake edges. This behaviour was further corroborated, at atomistic resolution, by functionalising the graphene layers with bipyridine groups able to complex single platinum atoms. The distribution of these groups was then directly imaged using aberration-corrected HAADF-STEM. Platinum atoms were found to be homogeneously distributed across smaller graphenes; in contrast, a more heterogeneous distribution, with a predominance of edge grafting was observed for larger graphites. These observations show that grafting is directed towards flake edges, but not necessary at edge sites; the mechanism is attributed to the relative inaccessibility of the inner basal plane to reactive moieties, resulting in kinetically driven grafting nearer flake edges. This phenomenology may be relevant to a wide range of reactions on graphenes and other 2d materials.

The flake size and morphology of the starting material strongly effect the degree and location of grafting when using reductive functionalisation.     

Measurement of spin-correlation parameters ANN,ASS, and ASL at 2.1 GeV in proton-proton elastic scattering

At the Cooler Synchrotron COSY/Jülich spin-correlation parameters in elastic proton-proton (pp) scattering have been measured with a 2.11 GeV polarized proton beam and a polarized hydrogen atomic beam target. We report results for A(NN), A(SS), and A(SL) for c.m. scattering angles between 30 degrees and 90 degrees. Our data on A(SS)--the first measurement of this observable above 800 MeV--clearly disagrees with predictions of available pp scattering phase-shift solutions while A(NN) and A(SL) are reproduced reasonably well. We show that in the direct reconstruction of the scattering amplitudes from the body of available pp elastic scattering data at 2.1 GeV the number of possible solutions is considerably reduced.     

Group-IV nanocluster formation by ion-beam synthesis

A short review of our investigations devoted to the use of ion-beam-synthesized nanoclusters for silicon-based light emission and nonvolatile memory effects is presented. Blue-violet light emission is demonstrated based on Ge-implanted silicon dioxide layers thermally grown on silicon substrates. This version of silicon-based light emission relies on Ge-related defects in the amorphous ≡Si–O–Si≡ network. The photoluminescence and electroluminescence are excited by a singlet S₀–S₁ transition of a neutral oxygen vacancy and by electron injection from the silicon substrate into the silicon dioxide layer, respectively. Whereas the photoluminescence excitation is a well-known mechanism, for the case of electroluminescence an interpretation was performed for the first time in the course of our studies. It was found that the most probable way to excite luminescence centers is the impact excitation by hot electrons. Whereas the injection is explained by trap-assisted tunneling of electrons from the substrate into the oxide, the electrons will be transported via traps or in the SiO₂ conduction band. The application of the silicon-based light-emitting devices for an integrated optocoupler arrangement is described. Another application of nanoclusters is based on the investigation of thin Si-implanted silicon dioxide layers for nonvolatile memory devices. First promising results demonstrate that the observed programming window can reach several volts and the devices exhibit excellent retention behavior. A 256 K-nv-SRAM is demonstrated showing a programming window of >1 V for write pulses of 12 V/8 ms. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-351/260-3411, E-mail: w.skorupa@fz-rossendorf.de     

Cross-sections and spin observables in proton-proton elastic scattering: Results from EDDA at COSY

At the Cooler-Synchrotron COSY/Jülich polarized and unpolarized elastic proton-proton scattering has been investigated with the EDDA-Experiment in the energy range ( -2.5 GeV). By taking scattering data during the acceleration of the beam with a large-acceptance ( - ) detector, precise excitation functions for differential cross-section and analyzing power have been measured in small energy steps with consistent normalization with respect to luminosity and polarization. These data have helped to improve the determination of phase-shifts at higher energies and impose tight quantitative upper bounds on possible resonant contributions to pp elastic scattering, as they might arise from exotic 6-quark configurations. Recently, with polarized beam and target, the spin-correlation parameters , , and have been determined at 10 energies between 0.8 and 2.5 GeV. The observable has been measured the first time above 800 MeV and our results are in sharp contrast to phase-shift predictions at higher energies.Received: 30 September 2002, Published online: 22 October 2003PACS: 24.70. + s Polarization phenomena in reactions - 25.40.Cm Elastic proton scattering - 11.80.Et Partial-wave analysis - 13.75.Cs Nucleon-nucleon interactions (including antinucleons, deuterons, etc.)     

Triggered discharges with high arc voltages in a vacuum interrupter

Studies of nonsustained disruptive discharges (NSDDs), isolated cases of which can occur in vacuum interrupters, indicate lateral discharges between the cathode and shield, which can initiate a brief discharge between the contacts. To facilitate the study of such discharges, the sample discharges were triggered by a surface discharge induced by a spark gap, built into the side of the cathode, and observed with a high-speed film camera and image-converter camera. The tests showed a cathode spot after igniting. The emitted electrons first charge the shield negatively and then are directed toward the anode. The discharge burns at a high voltage, with current ranging from 10 to 100 A. After a period of up to 400 μs, the current demand increases abruptly; an arc discharge occurs between the contacts and discharges the capacitances near the switch. The contact gap undergoes a rapid dielectric recovery, and the restored voltage is maintained. These types of discharge were also observed with NSDDs; thus it can be assumed that the triggered discharges studied correspond to the NSDD type     

ESR and scattering studies of perfluorinated surfactants in ordered and disordered systems

Applied Magnetic Resonance - Perfluorinated surfactants, likewise their perhydrogenated analogs, give rise in water to micellar and liquid crystal phases, whose structures depend on the surfactant...     

Neutrons for fuel cell membranes: Structure, sorption and transport properties

A molecular level understanding of structure and transport properties in fuel cell ionomer membranes is essential for designing new electrolytes with improved performance. Scattering techniques are suited tools for this purpose. In particular, neutron scattering, which has been extensively used in hydrogen-containing systems, is well adapted to investigate water-dependent complex polymeric morphologies. We report Small-Angle Neutron Scattering (SANS) studies on different types of fuel cell polymers: perfluorinated, radiation-grafted and sulfonated polyphosphazene membranes. We show that contrast variation methods can be efficiently employed to provide new insights on membrane microstructure and reveal ionic condensation effects. Neutrons have been used also as non-intrusive diagnosis tool to probe water properties and distribution inside membranes. Recently, in-situ neutronography and SANS experiments on operating fuel cells have been reported. In-plane cartography of water distribution at the surface of bipolar plates and water profiles across membrane thickness have been obtained and studied as a function of operating conditions. The last section of the article is devoted to the use of Quasi-Elastic Neutron Scattering to study water dynamics at molecular scale. We show that analysis with an appropriate sophisticated diffusion model allows to extract diffusion coefficients, characteristic times and length-scales of molecular motions. This quantitative information is fruitfully integrated in multi-scale modelling and usefully compared with numerical simulations. QENS also permits to compare alternative polymers and relate dynamical properties to chemical composition and membrane nanostructure.     

Transient behavior of the strong violet electroluminescence of Ge-implanted SiO2 layers

Si-based light emitters will be a key element of future optoelectronics. One of the most promising approaches is Ge implantation into thin SiO₂ films on crystalline Si. This system exhibits a strong violet electroluminescence with a power efficiency up to 0.5% [18], but the mechanism of electrical excitation is not yet fully understood. In this paper the electrical excitation of the luminescence centers is investigated by means of electrical and electroluminescence transient measurements. It is found that the most probable way to excite luminescence centers is the impact excitation by hot electrons. Whereas the injection is explained by trap-assisted tunneling of electrons from the substrate into the oxide, the electrons will be transported via traps or in the SiO₂ conduction band. Furthermore, the electroluminescence rise and decay time is estimated to be of the order of 100 μs. Received: 26 September 2001 / Published online: 29 November 2001