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11.
This paper presents a new design for an insensitive-polarization all-optical switch using 2 × 2 multimode interference (MMI) couplers. The switching structure can operate at central operating wavelength 1550 nm for both polarizations. A nonlinear directional coupler is used to realize the phase shifter and therefore switching mechanism is obtained. The transfer matrix method and beam propagation method are used to design and optimize the whole device structure. 相似文献
12.
We study optical analogues of higher-order Dirac solitons (HODSs) in binary waveguide arrays. Like higher-order solitons obtained from the well-known nonlinear Schrödinger equation governing the pulse propagation in an optical fiber, these HODSs have amplitude profiles which are numerically shown to be periodic over large propagation distances. At the same time, HODSs possess some unique features. Firstly, the period of a HODS depends on its order parameter. Secondly, the discrete nature in binary waveguide arrays imposes the upper limit on the order parameter of HODSs. Thirdly, the order parameter of HODSs can vary continuously in a certain range. 相似文献
13.
Applying tight-binding approximation and spin pairing of like charge carriers in a pair of excitons created in a lattice, the possibility of forming a bound exciton-exciton state is studied. It is found that, provided there exists strong exciton-lattice interaction, such a bound state may be formed and its energy may lie within the valence band deforming the material into a crystalline solid with no energy gap. Lowering of the energy is calculated in naphthalene and anthracene crystals where some experimental results are known. The excess energy released after the formation of such bound state can be adequate, depending on the material, to desorb neutral atoms or eject of electrons from surfaces. 相似文献
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15.
Ngo Ngoc Ha Nguyen Truong Giang Tran Ngoc Khiem Nguyen Duc Dung Tom Gregorkiewicz 《固体物理学:研究快报》2016,10(11):824-827
Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si0.2Ge0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO2 host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
16.
Truong Minh Duc Dang Huu Dinh Tran Quang Dat 《International Journal of Theoretical Physics》2016,55(6):3027-3040
We examine the higher-order nonclassical properties of the even and odd charge coherent states as well as proposing a scheme to generate these states whose modes can freely travel in open space. We show that the even and odd charge coherent states exhibit both higher-order antibunching and higher-order squeezing. While the two-mode higher-order antibunching occurs in any order and essentially depends on the charge number, the two-mode higher-order squeezing appears only in the even orders. We also prove that these states are genuinely entangled, and they can be generated by means of cross-Kerr media, beam splitters, phase shifts and threshold detectors. We find that the fidelity and the corresponding success probability to generate these states are dependent on the correlative parameters. 相似文献
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18.
G. Wendrock H. Lffler I. Raphelt Chu Thien Truong 《Crystal Research and Technology》1987,22(4):547-552
The upper limit temperature Thn of the onset of homogeneous nucleation of Guinier-Preston (GP) zones was determined for three Al Zn alloys with xZn = 4.5, 6.0 and 8.0 at.% by SAXS investigations (cooling from the range of homogeneity to various temperatures Ta and ageing at Ta). The results are Thn = (95 ± 3) °C for xZn = 4.5 at.%, (118 ± 3) °C (6.0 at.%) and (154 ± 3) °C (8.0 at.%), respectively. The obtained results fit well the data known for the alloys with higher contents of Zn. It is stressed that one has to distinguish between Thn, determined by isothermal measurements after a direct quench or cooling to the respective Ta, and the upper limit temperature Trhn of the onset of the rapid homogeneous nucleation of GP zones (continuous cooling). 相似文献
19.
Journal of Optimization Theory and Applications - We study the split common fixed point problem for Bregman relatively nonexpansive operators in real reflexive Banach spaces. Using Bregman... 相似文献
20.
Truong Nguyen-Ba Philip W. Sharp Rémi Vaillancourt 《Journal of Computational and Applied Mathematics》2008
A four-stage Hermite–Birkhoff–Obrechkoff method of order 14 with four quantized variable steps, denoted by HBOQ(14)4, is constructed for solving non-stiff systems of first-order differential equations of the form y′=f(t,y) with initial conditions y(t0)=y0. Its formula uses y′, y″ and y? as in Obrechkoff methods. Forcing a Taylor expansion of the numerical solution to agree with an expansion of the true solution leads to multistep- and Runge–Kutta-type order conditions which are reorganized into linear Vandermonde-type systems. To reduce overhead, simple formulae are derived only once to obtain the values of Hermite–Birkhoff interpolation polynomials in terms of Lagrange basis functions for 16 quantized step size ratios. The step size is controlled by a local error estimator. When programmed in C ++, HBOQ(14)4 is superior to the Dormand–Prince Runge–Kutta pair DP(8,7)13M of order 8 in solving several problems often used to test higher order ODE solvers at stringent tolerances. When programmed in Matlab, it is superior to ode113 in solving costly problems, on the basis of the number of steps, CPU time, and maximum global error. The code is available on the URL www.site.uottawa.ca/~remi. 相似文献