Mg,Si和S同位素链的壳反常

采用考虑轴向形变的相对论平均场理论,以双中子、双质子分离能隙δ_2n/δ_2p作为壳封闭的特征,分析了Mg,Si和S同位素链的壳封闭和壳反常,发现Mg同位素链在N=12,16处,Si同位素链在N=14,S同位素链在N?=16处出现明显的壳封闭结构,Si同位素链在N=28处壳层结构并没有消失.Mg,Si和S同位素链在N=20处壳效应并不太明显.     

SYNTHESIS OF LIGHT OLEFINS FROM SYNGAS VIA DIMETHYLETHR——A NEW TECHNIQUE PROCESS

A new route named as SDTO method for the synthesis of lightolefins from syngas has been proposed.That is to convert syngas todimethylether and then to convert dimethylether to light olefins.The catalystsfor the two conversion reactions have been developed.For the first reaction,the catulySt was synthesized by the combination of methanol synthesis catalystwith γ-Al_2O_3or zeolites which possesses both metallic and acidic functions.Thecatalyst for the second reaction was modified SAPO-34 molecular sieve.Thevariables of the reactions have also been investigated.The results from theserial connection of the two conversion steps without any separation show thatthe yield of C_2~-C_4~- olefins Could be>100g/(m~3 syngas).     

HL—1装置中心热区电子热传导初步分析

在电流及温度分布满足“不变性”原理的基础上,本文分析了等离子体中心热区的能量平衡,求出了电子热传导系数,根据实验数据拟合出HL-1装置电子热传导系数的定标关系为X_e=6.8(n_(eq1))~(-1.2)。此关系与其他托卡马克装置的结果类似。     

PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION

Photoluminescence spectra of a series of MBE-grown Hg_1-xCd_xTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, D^oX, A^oX and D^oA^o transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.     

Microstructure Evolution in Laser RS Co-base Metastable Alloy

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红外光谱中溶剂效应机理初探——配位机制的提出

本文就红外光谱中溶剂效应机理提出了溶质和溶剂分子间的瞬时配位作用机制，认为同－溶质在不同溶剂中的振动波数不同，是由于这种瞬时配位作用改变了溶质价电子运动状态所致。据此提出了溶剂效砂的定量关系式，测定了七种溶剂配位效应常数。用这一套经验参数处理了几种取代苯甲酸的羰基伸缩振动的溶剂效应，得较好的线性关系。还发现羰基的振动波数与取代基的Ｈａｍｍｅｔｔ常数σ之间，羰基伸缩振动对溶剂效应的敏感度与σ之间，Ｈ     

金属表面生成氧化膜在电解质中的电位

测量金属表面生成氧化膜在电解质中的电位时,金属/氧化膜/电解质/参比电极构成了多电极体系,其中包括3个电池,由3个电池之间的关系、电池过程中所有的电化学反应、电荷传输步骤和化学反应步骤,导出电位的普遍适用的公式: E=E_a⁰+sum from s=1 to 3|η_t,s|-1/(ne)v₇ΔG₇, E=E_c⁰-sum from s=4 to 6|η_t,s|+1/(ne)v₈ΔG₈.当金属/氧化膜/电解质电池受到不同的步骤控制时,可以得到不同的简化公式.     

纳米硅薄膜光吸收谱的研究

用恒定光电导法测量了纳米硅(其晶粒尺寸为3-5nm,晶态成分比X_c为45％—50％)薄膜在0.9—2.5eV范围的光吸收谱。分析了在不同光子能量范围可能存在的对光电导作主要贡献的几种光跃迁过程,以及随着X_c的增加,材料由非晶、微晶转变为纳米硅薄膜时光吸收谱的变化。发现纳米硅晶粒之间的界面区(平均厚度约为1nm)中载流子的跃迁及传输过程对整个范围的光吸收谱起主导作用。联系纳米硅的这种特殊结构解释了有关实验结果。 关键词：     

一类广义Liénard系统解的有界性

研究了一类广义 Liénard系统dxdt=p(y) -F(x) ,　 dydt=-g(x) (E)解的有界性 .首先获得了系统 (E)存在无界解的两个新的充分条件 ,然后获得系统 (E)所有解正向有界的若干充分条件和充要条件 ,所获结果改进和扩展了文 [1 -2 ]中的相应结果 .     

金属颗粒-半导体膜Cu:CdS的制备及结构研究

利用磁控溅射产生金属Cu团簇，同时蒸发半导体介质CdS，将Cu团簇包埋在CdS介质中，制备出金属颗粒 半导体膜．团簇大小可通过改变溅射气压控制．用TEM研究了嵌埋团簇的结构．分析表明：CdS很好地包埋了Cu团簇，都呈多晶结构；团簇尺寸在5—20nm，Cu晶格发生了膨胀，膨胀量在7%左右 关键词：