The growth and modification of materials via ion–surface processing

A wide variety of gas phase ions with kinetic energies from 1–10⁷ eV increasingly are being used for the growth and modification of state-of-the-art material interfaces. Ions can be used to deposit thin films; expose fresh interfaces by sputtering; grow mixed interface layers from ions, ambient neutrals, and/or surface atoms; modify the phases of interfaces; dope trace elements into interface regions; impart specific chemical functionalities to a surface; toughen materials; and create micron- and nanometer-scale interface structures. Several examples are developed which demonstrate the variety of technologically important interface modification that is possible with gas phase ions. These examples have been selected to demonstrate how the choice of the ion and its kinetic energy controls modification and deposition for several different materials. Examples are drawn from experiments, computer simulations, fundamental research, and active technological applications. Finally, a list of research areas is provided for which ion–surface modification promises considerable scientific and technological advances in the new millennium.     

Photoinduced decarboxylation of 9‐oxo‐6,9‐dihydro[1,2,5]selenadiazolo[3,4‐f]quinoline‐8‐carboxylic acid

Photoinduced reactions of 9‐oxo‐6,9‐dihydro[1,2,5]selenadiazolo[3,4‐f]quinoline‐8‐carboxylic acid (SeQCA) were investigated in alkaline media (aqueous NaOH solutions) by electron paramagnetic resonance (EPR) spectroscopy, following the in situ formation of paramagnetic species. According to UV–Vis and nuclear magnetic resonance investigations, protonation (pH ≈ 11) and deprotonation (pH ≈ 13) of the imino hydrogen of the 4‐pyridone moiety has to be considered, reflected also in the different EPR spectra observed upon irradiation. Photoinduced generation of radicals was found only for carboxylate substituted SeQCA; other studied selenadiazoloquinolone derivatives, together with those substituted at the C(8) position (R = H, COOCH₂CH₃, COOCH₃, COCH₃ or CN), did not generate paramagnetic species during exposure. Consequently, photodecarboxylation was suggested as the decisive step, accompanied by the decomposition of the selenadiazole ring, resulting in the formation of ortho‐hydroxylate anions. EPR parameters elucidated from experimental EPR spectra obtained at pH ≈ 11 and pH ≈ 13 indicate the formation of oxygen‐centered radicals at the decarboxylated 4‐pyridone ring. EPR spin trapping experiments with nitromethane confirmed a very effective photoinduced electron transfer from all the selenadiazoloquinolones investigated. Copyright © 2011 John Wiley & Sons, Ltd.     

A fast mesh deformation method using explicit interpolation

A novel mesh deformation algorithm for unstructured polyhedral meshes is developed utilizing a tree-code optimization of a simple direct interpolation method. The algorithm is shown to provide mesh quality that is competitive with radial basis function based methods, with markedly better performance in preserving boundary layer orthogonality in viscous meshes. The parallelization of the algorithm is described, and the algorithm cost is demonstrated to be O(n log n). The parallel implementation was used to deform meshes of 100 million nodes on nearly 200 processors demonstrating that the method scales to large mesh sizes. Results are provided for a simulation of a high Reynolds number fluid–structure interaction case using this technique.     

Absence of broken time-reversal symmetry in the pseudogap state of the high temperature La(2-x)SrxCuO4 superconductor from muon-spin-relaxation measurements

We have performed zero-field muon-spin-relaxation measurements on single crystals of La(2-x)SrxCuO4 to search for spontaneous currents in the pseudogap state. By comparing measurements on materials across the phase diagram, we put strict upper limits on any possible time-reversal symmetry breaking fields that could be associated with the pseudogap. Comparison between experimental limits and the proposed circulating current states effectively eliminates the possibility that such states exist in this family of materials.     

A model of oxide film originating at thermal oxidation of GaAs

In this paper an approximative procedure to determine of the most probable model of oxide film originating at thermal oxidation of GaAs single-crystal samples within the temperature range 480–530 °C is proposed. It is shown that the system presented is more complicated if compare with that presumed previously.     

Laser desorption ion trap mass spectrometry of self-assembled monolayers

It is demonstrated that laser desorption ion trap mass spectrometry (LD-ITMS) can be successfully applied to the chemical analysis of a monolayer of adsorbates on a solid surface. Negative ion spectra obtained from LD-ITMS of self-assembled monolayers adsorbed from solutions of alkanethiols (CH₃(CH₂)_nSH with N = 5, 9, and 15) onto polycrystalline gold surfaces displayed clear ion peaks corresponding to the sulfonate adsorbate species. Sulfonate ions with the general formula CH₃(CH₂)_nSO⁻₃ were detected at m/z 165, 221, and 305, respectively, and were derived from the partial oxidation of the corresponding alkanethiol self-assembled monolayers. Little fragmentation and no clustering was observed in these mass spectra. These results indicate that the sensitivity of LD-ITMS is sufficient to allow its application to a wide array of problems in surface science.