磁化铁氧体覆盖二维导体目标FDTD分析的移位算子方法

采用移位算子方法把时域有限差分法推广应用于二维磁各向异性色散介质—磁化铁氧体中.证明了电磁波横向入射二维轴向磁化铁氧体目标情形下,电磁波可按目标的轴向分解为横电波(TE波)和横磁波(TM波),且TE波的散射特性与铁氧体介质无关,而TM波的散射特性与介质电磁参量密切相关,同时对其物理原因进行了分析.通过采用移位算子方法处理磁化铁氧体频域本构关系,得到该情形下目标电磁散射的移位算子时域有限差的迭代计算公式,同时解决了电磁波在各向异性和频率色散介质中传播的问题.计算了轴向磁化铁氧体涂敷VonKarman型导体柱的TM波双站雷达散射截面,分析了铁氧体参量对目标双站雷达散射截面的影响.结果表明:恰当地选择铁氧体参量能有效地减少目标的雷达散射截面,本文时谐因子取exp〔jωt〕.     

演示实验制作促进动手动脑的大学物理探索式学习的改革尝试

介绍了我们通过制作演示实验装置促进动手动脑的大学物理探索式学习的教学改革实践.详细说明了动手动脑学习的试验过程、试验结果.自制物理演示实验装置给学生提供了一个可以自主选题的探索式学习平台.     

基于Lissajous图技术的波长移相标定方法

波长移相干涉仪可应用于大口径光学元件的检测。研究了基于Lissajous图技术的波长移相标定方法,实现了干涉图间移相量的计算,解决了在不同干涉腔长下进行测试时移相量需控制成为一个特定值的问题。首先通过模拟仿真,验证了方法的正确性;然后编写程序对已知移相量的实际干涉图进行计算。结果表明,在干涉图对比度较好以及对计算的两点选择恰当的情况下,计算出的相对误差在4%范围内。     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.     

Determination of the ~(12)C(p, γ)~(13)N reaction rates fromthe ~(12)C(~7Li,~6He)~(13)N reaction

The angular distribution of the 12C(7Li,6He)13N reaction at E(7Li) = 44.0 MeV was measured at the HI-13 tandem accelerator of Beijing, China. The asymptotic normalization coefficient (ANC) of 13N → 12C + p was derived to be (1.64 ± 0.11) fm-1/2 through the distorted wave Born approximation (DWBA) analysis. The ANC was then used to deduce the astrophysical S (E) factors and reaction rates for the 12C(p,γ)13N direct capture reaction at energies of astrophysical relevance.     

Radiative leptonic decay Bc^-→τ^vτ^-γ in the standard model and the two-Higgs-doublet model

We analyze the radiative leptonic Bc decay Bc^-→τ^vτ^-γ in the Standard Model and the two- Higgs-doublet model using the non-relativistic constituent quark model. The results confirm that this channel is experimentally promising in view of the large number of Bc mesons which are expected to be produced at future hadron facilities. We also find that this decay is sensitive to the parameters of the two-Higgs-doublet model, and it can be tested in future experiments.     

基于代数滑移模型的光催化反应器内催化剂颗粒分布特性研究

针对光催化制氢反应器内液固两相流的特点,运用代数滑移模型,对反应器内的催化剂颗粒-水两相流动进行了数值模拟。采用分块的结构化网格,并运用多重网格方法进行求解。通过与前人实验中压力梯度结果的比较,对模型进行了验证,并最终得到了反应器内催化剂颗粒的典型分布及相应的类型图。     

在不同压力下研究巨磁电阻氧化物的响应特性

本文主要介绍利用自主设计的拉压实验平台对巨磁电阻阻值随外界压力的变化情况进行研究。通过在不同的压力下测量巨磁电阻的伏安特性,得到一些结论,为以后进一步的研究开辟新方法新理念。     

演示记忆合金弹簧的形状记忆效应的实验设计

设计了测试记忆合金弹簧的形状记忆效应的物理实验.描述了实验装置的设计和结构,给出了实验内容的设计和实验方法,包括观察测试记忆合金弹簧的温度-形变记忆效应实验和电流-形变记忆效应实验.根据测量数据,描绘了用该仪器得到的温度-形变曲线和电流-形变曲线.该实验可作为设计性实验在大学物理实验课中开出.     

Solutions of Dirac Equation for Makarov Potential with Pseudospin Symmetry

The pseudospin symmetry in the Makarov potential is investigated systematically by solving the Dirac equation. The analytical solution for the Makarov potential with pseudospin symmetry is obtained by Nikiforov-Uvarov （N-U） method. The eigenfunctions and eigenenergies are presented with equal mixture of vector and scalar potentials in opposite signs, for which is exact.